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IRS2183SPBF

产品描述Gate Drivers HALF BRDG DRVR 600V 10 to 20V 1.4A
产品类别模拟混合信号IC    驱动程序和接口   
文件大小536KB,共24页
制造商Infineon(英飞凌)
官网地址http://www.infineon.com/
标准
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IRS2183SPBF概述

Gate Drivers HALF BRDG DRVR 600V 10 to 20V 1.4A

IRS2183SPBF规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Infineon(英飞凌)
包装说明SOP, SOP8,.25
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time12 weeks
Samacsys DescriptionInfineon IRS2183SPBF Dual Half Bridge MOSFET Power Driver 2.3A, 10 → 20 V, Non-Inverting, SOIC 8-Pin
内置保护TRANSIENT; UNDER VOLTAGE
接口集成电路类型HALF BRIDGE BASED PERIPHERAL DRIVER
JESD-30 代码R-PDSO-G8
JESD-609代码e3
长度4.9 mm
湿度敏感等级2
功能数量1
端子数量8
最高工作温度125 °C
最低工作温度-40 °C
输出电流流向SOURCE AND SINK
标称输出峰值电流1.9 A
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP8,.25
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
电源15 V
认证状态Not Qualified
座面最大高度1.75 mm
最大供电电压20 V
最小供电电压10 V
标称供电电压15 V
表面贴装YES
技术CMOS
温度等级AUTOMOTIVE
端子面层Matte Tin (Sn)
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
断开时间0.33 µs
接通时间0.27 µs
宽度3.9 mm
Base Number Matches1

文档预览

下载PDF文档
Data Sheet No. PD60265
IRS2183/IRS21834(S)PbF
Features
Floating channel designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage, dV/dt
immune
Gate drive supply range from 10 V to 20 V
Undervoltage lockout for both channels
3.3 V and 5 V input logic compatible
Matched propagation delay for both channels
Logic and power ground +/- 5 V offset
Lower di/dt gate driver for better noise immunity
Output source/sink current capability 1.4 A/1.8 A
RoHS compliant
HALF-BRIDGE DRIVER
Packages
8-Lead PDIP
IRS2183
14-Lead PDIP
IRS21834
Description
The IRS2183/IRS21834 are high voltage,
high speed power MOSFET and IGBT
drivers with dependent high-side and
Feature Comparison
Cross-
low-side referenced output channels.
Deadtime
ton/toff
Input
conduction
Ground Pins
Part
Proprietary HVIC and latch immune
logic
prevention
(ns)
(ns)
logic
CMOS technologies enable ruggedized
2181
COM
HIN/LIN
no
none
180/220
monolithic construction. The logic input
21814
V
SS
/COM
is compatible with standard CMOS or
2183
Internal 400
COM
HIN/LIN
yes
180/220
21834
Program 400-5000
V
SS/
COM
LSTTL output, down to 3.3 V logic. The
2184
Internal 400
COM
IN/SD
yes
680/270
output drivers feature a high pulse cur-
21844
Program 400-5000
V
SS
/COM
rent buffer stage designed for minimum
driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT
in the high-side configuration which operates up to 600 V.
8-Lead SOIC
IRS2183S
14-Lead SOIC
IRS21834S
Typical Connection
V
CC
up to 600 V
V
CC
HIN
LIN
V
B
HO
V
S
LO
up to 600 V
TO
LOAD
HIN
LIN
COM
IRS2183
HO
V
CC
HIN
LIN
V
CC
HIN
LIN
DT
V
B
V
S
IRS21834
TO
LOAD
(Refer to Lead Assignment for correct pin
V
SS
configuration) These diagrams show electrical
connections only. Please refer to our Application
Notes and DesignTips for proper circuit board layout.
R
DT
V
SS
COM
LO
www.irf.com
1

IRS2183SPBF相似产品对比

IRS2183SPBF IRS21834PBF IRS21834STRPBF IRS2183PBF
描述 Gate Drivers HALF BRDG DRVR 600V 10 to 20V 1.4A Gate Drivers Hlf Brdg Drvr Sft Trn On Lw Sd Invrt Gate Drivers Hlf Brdg Drvr Sft Trn On Lw Sd Invrt Gate Drivers Hlf Brdg Drvr Soft Trn On 400ns
是否Rohs认证 符合 符合 符合 符合
厂商名称 Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌)
包装说明 SOP, SOP8,.25 DIP, DIP14,.3 SOP, SOP14,.25 DIP, DIP8,.3
Reach Compliance Code compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
内置保护 TRANSIENT; UNDER VOLTAGE TRANSIENT; UNDER VOLTAGE TRANSIENT; UNDER VOLTAGE TRANSIENT; UNDER VOLTAGE
接口集成电路类型 HALF BRIDGE BASED PERIPHERAL DRIVER HALF BRIDGE BASED PERIPHERAL DRIVER HALF BRIDGE BASED PERIPHERAL DRIVER HALF BRIDGE BASED PERIPHERAL DRIVER
JESD-30 代码 R-PDSO-G8 R-PDIP-T14 R-PDSO-G14 R-PDIP-T8
长度 4.9 mm 19.305 mm 8.65 mm 9.88 mm
功能数量 1 1 1 1
端子数量 8 14 14 8
最高工作温度 125 °C 125 °C 125 °C 125 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C
输出电流流向 SOURCE AND SINK SOURCE AND SINK SOURCE AND SINK SOURCE AND SINK
标称输出峰值电流 1.9 A 1.9 A 1.9 A 1.9 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP DIP SOP DIP
封装等效代码 SOP8,.25 DIP14,.3 SOP14,.25 DIP8,.3
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE IN-LINE SMALL OUTLINE IN-LINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 15 V 15 V 15 V 15 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.75 mm 5.33 mm 1.75 mm 5.33 mm
最大供电电压 20 V 20 V 20 V 20 V
最小供电电压 10 V 10 V 10 V 10 V
标称供电电压 15 V 15 V 15 V 15 V
表面贴装 YES NO YES NO
技术 CMOS CMOS CMOS CMOS
温度等级 AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
端子形式 GULL WING THROUGH-HOLE GULL WING THROUGH-HOLE
端子节距 1.27 mm 2.54 mm 1.27 mm 2.54 mm
端子位置 DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
断开时间 0.33 µs 0.33 µs 0.33 µs 0.33 µs
接通时间 0.27 µs 0.27 µs 0.27 µs 0.27 µs
宽度 3.9 mm 7.62 mm 3.9 mm 7.62 mm
Samacsys Description Infineon IRS2183SPBF Dual Half Bridge MOSFET Power Driver 2.3A, 10 → 20 V, Non-Inverting, SOIC 8-Pin Infineon IRS21834PBF Dual Half Bridge MOSFET Power Driver 2.3A, 10 → 20 V, Non-Inverting, PDIP 14-Pin - Infineon IRS2183PBF Dual Half Bridge MOSFET Power Driver, 2.3A 8-Pin, PDIP

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