CMS30I30A
Schottky Barrier Diode
CMS30I30A
1. Applications
•
•
Secondary Rectification in Switching Regulators
Reverse-Current Protection in Mobile Devices
2. Features
(1)
(2)
(3)
(4)
Peak forward voltage: V
FM
= 0.49 V (max)@I
FM
= 3 A
Average forward current: I
F(AV)
= 3 A
Repetitive peak reverse voltage: V
RRM
= 30 V
Small, thin package suitable for high-density board assembly
Toshiba Nickname: M-FLAT
TM
3. Packaging and Internal Circuit
1: Anode
2: Cathode
3-4E1S
25
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
Repetitive peak reverse voltage
Average forward current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Symbol
V
RRM
I
F(AV)
I
FSM
T
j
T
stg
Note
(Note 1)
(Note 2)
Rating
30
3
30
150
-55 to 150
Unit
V
A
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: T
ℓ
= 102
,
square wave (α = 180°), V
R
= 15 V
Note 2: f = 50 Hz, half-sine wave
Note:
Start of commercial production
©2017 Toshiba Corporation
1
2010-10
2017-01-18
Rev.4.0
CMS30I30A
5. Thermal Characteristics
Characteristics
Thermal resistance (junction-to-ambient)
Symbol
R
th(j-a)
Note
Test Condition
Device mounted on a ceramic board
(board size: 50 mm
×
50 mm)
(soldering land size: 2 mm
×
2 mm)
(board thickness: 0.64 mm)
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm)
(soldering land size: 6 mm
×
6 mm)
(board thickness: 1.6 mm)
Junction to cathode lead
Max
60
Unit
/W
135
Thermal resistance (junction-to-lead)
R
th(j-ℓ)
16
6. Electrical Characteristics (Unless otherwise specified, T
a
= 25
)
25
Characteristics
Peak forward voltage
Symbol
V
FM(1)
V
FM(2)
V
FM(3)
Repetitive peak reverse current
Junction capacitance
I
RRM(1)
I
RRM(2)
C
j
Note
Test Condition
I
FM
= 0.5 A (pulse measurement)
I
FM
= 1 A (pulse measurement)
I
FM
= 3 A (pulse measurement)
V
RRM
= 5 V (pulse measurement)
V
RRM
= 30 V (pulse measurement)
V
R
= 10 V, f = 1 MHz
Min
Typ.
0.3
0.33
0.4
14
28
82
Max
0.49
100
pF
µA
Unit
V
7. Marking
Fig. 7.1 Marking
Marking Code
SQ
Part Number
CMS30I30A
©2017 Toshiba Corporation
2
2017-01-18
Rev.4.0
CMS30I30A
8. Usage Considerations
(1)
Schottky barrier diodes (SBDs) have reverse current greater than other types of diodes. This makes
SBDs more vulnerable to damage due to thermal runaway under high-temperature and high-voltage
conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and
safety design.
(2)
The absolute maximum ratings are rated values that must not be exceeded during operation, even for an
instant. The following are the recommended general derating methods for designing a circuit board using
this device.
V
RRM
:Use this rating with reference to (1) above. V
RRM
has a temperature
coefficient of 0.1%/ at low temperatures. Take this coefficient into account when designing a
circuit board that will be operated in a low-temperature environment.
I
F(AV)
:We recommend that the worst-case current be no greater than 80% of the absolute maximum
rating of I
F(AV)
and that the worst-case junction temperature, T
j
, be kept below 120. When using
this device,
allow margins, referring to the T
a(max)
-I
F(AV)
curve.
I
FSM
:This rating specifies peak non-repetitive forward surge current. This only applies to an abnormal
operation, which seldom occurs during the lifespan of a device.
T
j
:
(3)
Derate device parameters in proportion to this rating in order to ensure high reliability.
We recommend that the junction temperature (T
j
) of a device be kept below 120.
Thermal resistance (junction-to-ambient) varies with the mounting conditions of a device on a circuit
board. An appropriate thermal resistance value should be used, considering the heatsink, circuit board
design and land pattern dimensions (provided for reference only).
(4)
For other design considerations, see the Rectifiers databook or the Toshiba Semiconductor website.
9. Land Pattern Dimensions (for reference only)
Fig. 9.1 Land Pattern Dimensions (for reference only) (Unit: mm)
©2017 Toshiba Corporation
3
2017-01-18
Rev.4.0
CMS30I30A
10. Characteristics Curves (Note)
Fig. 10.1 I
F
- V
F
Fig. 10.2 P
F(AV)
- I
F(AV)
Fig. 10.3 T
a(max)
- I
F(AV)
Fig. 10.4 T
ℓ(max)
- I
F(AV)
Fig. 10.5 Surge current
©2017 Toshiba Corporation
4
2017-01-18
Rev.4.0
CMS30I30A
Fig. 10.6 r
th(j-a)
- t
Fig. 10.7 C
j
- V
R
Fig. 10.8 I
R
- T
j
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2017 Toshiba Corporation
5
2017-01-18
Rev.4.0
51单片机
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