(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage and Operating Junction Temperature Range (Note 1)
Symbol
V
RRM
V
RWM
V
R
I
O
I
FSM
T
stg
, T
J
Value
100
Unit
V
1.0
50
−65 to +175
A
A
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 3)
Symbol
Y
JCL
R
qJA
R
qJA
Value
23
85
330
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 4)
(I
F
= 1.0 A, T
J
= 25°C)
(I
F
= 2.0 A, T
J
= 25°C)
(I
F
= 1.0 A, T
J
= 125°C)
(I
F
= 2.0 A, T
J
= 125°C)
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
Symbol
V
F
0.76
0.84
0.61
0.68
I
R
40
0.5
mA
mA
Value
Unit
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with 700 mm
2
copper pad size (Approximately 1 in
2
) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm
2
copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width
≤
380
ms,
Duty Cycle
≤
2.0%.
http://onsemi.com
2
MBR1H100SFT3G, NRVB1H100SFT3G
TYPICAL CHARACTERISTICS
100
I
F
, FORWARD CURRENT (A)
150°C 125°C 25°C
10
I
F
, FORWARD CURRENT (A)
100
150°C 125°C 25°C
10
1
1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
10
I
R
, REVERSE CURRENT (mA)
I
R
, REVERSE CURRENT (mA)
1
0.1
125°C
0.01
0.001
0.0001
25°C
150°C
10
1
0.1
0.01
25°C
0.001
150°C
125°C
0.0001
0.00001
0
10
20
30
40
50
60
70
80
90
V
R
, REVERSE VOLTAGE (V)
0.00001
0
100
10
20
30
40
50
60
70
80
90 100
V
R
, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
P
FO
, AVERAGE POWER DISSIPATION (W)
2.0
R
qJL
= 23°C/W
dc
1.5
Square Wave
1.0
1.0
T
J
= 175°C
0.8
dc
0.6
Square Wave
0.4
0.5
0.2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
I
O
, AVERAGE FORWARD CURRENT (A)
0
135
140
145
150
155
160
165
170
175
T
L
, LEAD TEMPERATURE (°C)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
http://onsemi.com
3
MBR1H100SFT3G, NRVB1H100SFT3G
TYPICAL CHARACTERISTICS
140
120
C, CAPACITANCE (pF)
100
80
60
40
20
0
0
10
20
30
40
50
60
70
80
90
100
V
R
, REVERSE VOLTAGE (V)
T
J
= 25°C
Figure 7. Capacitance
1000
50% (DUTY CYCLE)
25%
10%
5.0%
2.0%
1.0%
1.0
100
R(t) (C/W)
10
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
Figure 8. Thermal Response, Junction−to−Ambient (20 mm
2
pad)
100
50% (DUTY CYCLE)
25%
10
R(t) (C/W)
10%
5.0%
2.0%
1.0
1.0%
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
Figure 9. Thermal Response, Junction−to−Ambient (1 in
2
pad)
http://onsemi.com
4
MBR1H100SFT3G, NRVB1H100SFT3G
PACKAGE DIMENSIONS
SOD−123FL
CASE 498
ISSUE D
E
q
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION
OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP.
MILLIMETERS
NOM
MAX
0.95
0.98
0.05
0.10
0.90
1.10
0.15
0.20
1.65
1.80
2.70
2.90
0.75
0.95
3.60
3.80
8°
−
INCHES
NOM
0.037
0.002
0.035
0.006
0.065
0.106
0.030
0.142
−
D
1
2
POLARITY INDICATOR
OPTIONAL AS NEEDED
A1
A
END VIEW
TOP VIEW
q
DIM
A
A1
b
c
D
E
L
H
E
q
MIN
0.90
0.00
0.70
0.10
1.50
2.50
0.55
3.40
0°
MIN
0.035
0.000
0.028
0.004
0.059
0.098
0.022
0.134
0°
MAX
0.039
0.004
0.043
0.008
0.071
0.114
0.037
0.150
8°
H
E
SIDE VIEW
2X
c
RECOMMENDED
SOLDERING FOOTPRINT*
L
4.20
2X
1.25
2X
b
2X
1.22
BOTTOM VIEW
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
