EEPROM 1K (64x8 or 32x16)
参数名称 | 属性值 |
Brand Name | STMicroelectronics |
是否Rohs认证 | 符合 |
厂商名称 | ST(意法半导体) |
零件包装代码 | DIP |
包装说明 | DIP, DIP8,.3 |
针数 | 8 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
Samacsys Description | M93C46-WBN6P, Serial EEPROM Memory 1kbit, Serial-Microwire, 200ns 2.5 → 5.5 V, 8-Pin PDIP |
备用内存宽度 | 8 |
最大时钟频率 (fCLK) | 2 MHz |
数据保留时间-最小值 | 40 |
耐久性 | 1000000 Write/Erase Cycles |
JESD-30 代码 | R-PDIP-T8 |
JESD-609代码 | e3 |
长度 | 9.27 mm |
内存密度 | 1024 bit |
内存集成电路类型 | EEPROM |
内存宽度 | 16 |
功能数量 | 1 |
端子数量 | 8 |
字数 | 64 words |
字数代码 | 64 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 85 °C |
最低工作温度 | -40 °C |
组织 | 64X16 |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | DIP |
封装等效代码 | DIP8,.3 |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
并行/串行 | SERIAL |
峰值回流温度(摄氏度) | NOT SPECIFIED |
电源 | 3/5 V |
认证状态 | Not Qualified |
座面最大高度 | 5.33 mm |
串行总线类型 | MICROWIRE |
最大待机电流 | 0.00001 A |
最大压摆率 | 0.0015 mA |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 2.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | INDUSTRIAL |
端子面层 | Matte Tin (Sn) - annealed |
端子形式 | THROUGH-HOLE |
端子节距 | 2.54 mm |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
宽度 | 7.62 mm |
最长写入周期时间 (tWC) | 5 ms |
写保护 | SOFTWARE |
M93C46-WBN6P | M93C76-WMN6P | M93C56-WMN6P | M93C66-WMN6P | M93C56-WDW6TP | M93C86-WDW6TP | M93C66-RMC6TG | M93C56-RDW6TP | |
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描述 | EEPROM 1K (64x8 or 32x16) | EEPROM 16 Kbit 8 Kbit 4Kbit 2 Kbit and 1 Kbit | EEPROM 2K (256x8 or 128x16) | EEPROM 4K (512x8 or 256x16) | EEPROM 2K (256x8 or 128x16) | EEPROM 16K (2Kx8 or 1Kx16) | EEPROM 4Kbit MICROWIRE EE 1.8 V to 5.5 V | EEPROM Microwire Serial Access EEProm |
Brand Name | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
包装说明 | DIP, DIP8,.3 | 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8 | 0.150 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SOP-8 | SOP, SOP8,.25 | TSSOP, TSSOP8,.25 | TSSOP, TSSOP8,.25 | HVSON, SOLCC8,.11,20 | TSSOP, TSSOP8,.25 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
备用内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
最大时钟频率 (fCLK) | 2 MHz | 2 MHz | 2 MHz | 2 MHz | 2 MHz | 2 MHz | 1 MHz | 1 MHz |
数据保留时间-最小值 | 40 | 40 | 40 | 40 | 40 | 40 | 40 | 40 |
耐久性 | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles |
JESD-30 代码 | R-PDIP-T8 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-N8 | R-PDSO-G8 |
JESD-609代码 | e3 | e4 | e4 | e4 | e4 | e4 | e4 | e4 |
长度 | 9.27 mm | 4.9 mm | 4.9 mm | 4.9 mm | 4.4 mm | 4.4 mm | 3 mm | 4.4 mm |
内存密度 | 1024 bit | 8192 bit | 2048 bit | 4096 bit | 2048 bit | 16384 bit | 4096 bit | 2048 bit |
内存集成电路类型 | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM |
内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 | 16 | 16 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
字数 | 64 words | 512 words | 128 words | 256 words | 128 words | 1024 words | 256 words | 128 words |
字数代码 | 64 | 512 | 128 | 256 | 128 | 1000 | 256 | 128 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
组织 | 64X16 | 512X16 | 128X16 | 256X16 | 128X16 | 1KX16 | 256X16 | 128X16 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | DIP | SOP | SOP | SOP | TSSOP | TSSOP | HVSON | TSSOP |
封装等效代码 | DIP8,.3 | SOP8,.25 | SOP8,.25 | SOP8,.25 | TSSOP8,.25 | TSSOP8,.25 | SOLCC8,.11,20 | TSSOP8,.25 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
并行/串行 | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL |
峰值回流温度(摄氏度) | NOT SPECIFIED | 260 | 260 | 260 | 260 | 260 | NOT SPECIFIED | 260 |
电源 | 3/5 V | 3/5 V | 3/5 V | 3/5 V | 3/5 V | 3/5 V | 2/5 V | 2/5 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 5.33 mm | 1.75 mm | 1.75 mm | 1.75 mm | 1.2 mm | 1.2 mm | 0.6 mm | 1.2 mm |
串行总线类型 | MICROWIRE | MICROWIRE | MICROWIRE | MICROWIRE | MICROWIRE | MICROWIRE | MICROWIRE | MICROWIRE |
最大待机电流 | 0.00001 A | 0.00001 A | 0.00001 A | 0.000005 A | 0.000005 A | 0.00001 A | 0.000002 A | 0.000002 A |
最大压摆率 | 0.0015 mA | 0.0015 mA | 0.001 mA | 0.002 mA | 0.002 mA | 0.0015 mA | 0.002 mA | 0.002 mA |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 1.8 V | 1.8 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | NO | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
端子面层 | Matte Tin (Sn) - annealed | Nickel/Palladium/Gold (Ni/Pd/Au) | Nickel/Palladium/Gold (Ni/Pd/Au) | Nickel/Palladium/Gold (Ni/Pd/Au) | Nickel/Palladium/Gold (Ni/Pd/Au) | Nickel/Palladium/Gold (Ni/Pd/Au) | Nickel/Palladium/Gold (Ni/Pd/Au) | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式 | THROUGH-HOLE | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | NO LEAD | GULL WING |
端子节距 | 2.54 mm | 1.27 mm | 1.27 mm | 1.27 mm | 0.65 mm | 0.65 mm | 0.5 mm | 0.65 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | 30 | 30 | 30 | 30 | 30 | NOT SPECIFIED | 30 |
宽度 | 7.62 mm | 3.9 mm | 3.9 mm | 3.9 mm | 3 mm | 3 mm | 2 mm | 3 mm |
最长写入周期时间 (tWC) | 5 ms | 5 ms | 5 ms | 5 ms | 5 ms | 5 ms | 10 ms | 10 ms |
写保护 | SOFTWARE | SOFTWARE | SOFTWARE | SOFTWARE | SOFTWARE | SOFTWARE | SOFTWARE | SOFTWARE |
是否Rohs认证 | 符合 | 符合 | 符合 | - | 符合 | - | - | 符合 |
厂商名称 | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) | - |
零件包装代码 | DIP | SOIC | SOIC | SOIC | SOIC | SOIC | - | SOIC |
针数 | 8 | 8 | 8 | 8 | 8 | 8 | - | 8 |
湿度敏感等级 | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Factory Lead Time | - | - | 13 weeks | 13 weeks | 13 weeks | 13 weeks | 12 weeks | 13 weeks |
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