IRFS644B_FP001,IRFS644B_FP001 pdf中文资料,IRFS644B_FP001引脚图,IRFS644B

IRFS644B_FP001: 产品描述MOSFET 250V N-Channel B-FET; 产品类别半导体分立半导体; 文件大小634KB，共8页; 制造商ON Semiconductor(安森美); 官网地址http://www.onsemi.cn; 标准

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IRFS644B_FP001在线购买

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MOSFET 250V N-Channel B-FET

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	ON Semiconductor(安森美)
产品种类 Product Category	MOSFET
RoHS	Details
技术 Technology	Si
安装风格 Mounting Style	Through Hole
封装 / 箱体 Package / Case	TO-220-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	250 V
Id - Continuous Drain Current	14 A
Rds On - Drain-Source Resistance	280 mOhms
Vgs - Gate-Source Voltage	30 V
最小工作温度 Minimum Operating Temperature	- 55 C
最大工作温度 Maximum Operating Temperature	+ 150 C
Configuration	Single
Pd-功率耗散 Pd - Power Dissipation	43 W
Channel Mode	Enhancement
系列 Packaging	Tube
高度 Height	16.3 mm
长度 Length	10.67 mm
Transistor Type	1 N-Channel
类型 Type	MOSFET
宽度 Width	4.7 mm
Fall Time	95 ns
Rise Time	115 ns
工厂包装数量 Factory Pack Quantity	50
Typical Turn-Off Delay Time	150 ns
Typical Turn-On Delay Time	20 ns
单位重量 Unit Weight	0.074950 oz

	IRFS644B_FP001
描述	MOSFET 250V N-Channel B-FET
Product Attribute	Attribute Value
制造商 Manufacturer	ON Semiconductor(安森美)
产品种类 Product Category	MOSFET
RoHS	Details
技术 Technology	Si
安装风格 Mounting Style	Through Hole
封装 / 箱体 Package / Case	TO-220-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	250 V
Id - Continuous Drain Current	14 A
Rds On - Drain-Source Resistance	280 mOhms
Vgs - Gate-Source Voltage	30 V
最小工作温度 Minimum Operating Temperature	- 55 C
最大工作温度 Maximum Operating Temperature	+ 150 C
Configuration	Single
Pd-功率耗散 Pd - Power Dissipation	43 W
Channel Mode	Enhancement
系列 Packaging	Tube
高度 Height	16.3 mm
长度 Length	10.67 mm
Transistor Type	1 N-Channel
类型 Type	MOSFET
宽度 Width	4.7 mm
Fall Time	95 ns
Rise Time	115 ns
工厂包装数量 Factory Pack Quantity	50
Typical Turn-Off Delay Time	150 ns
Typical Turn-On Delay Time	20 ns
单位重量 Unit Weight	0.074950 oz

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