74HCT4051D,74HCT4052D
CMOS Digital Integrated Circuits Silicon Monolithic
74HCT4051D,74HCT4052D
1. Functional Description
74HCT4051D:8-Channel Analog Multiplexer/Demultiplexer
74HCT4052D:Dual 4-Channel Analog Multiplexer/Demultiplexer
2. General
The 74HCT4051D/74HCT4052D are high speed CMOS ANALOG MULTIPLEXER/DEMULTIPLEXER
fabricated with silicon gate C
2
MOS technology. They achieve the high speed operation similar to equivalent
LSTTL while maintaining the CMOS low power dissipation.
This device may be used as a level converter for interfacing TTL or NMOS to High Speed CMOS. This inputs
are compatible with TTL, NMOS and CMOS output voltage levels.
The 74HCT4051D has an 8 channel configuration and the 74HCT4052D has a 4 channel
×
2 configuration.
The digital signal to the control terminal turns "ON" the corresponding switch of each channel a large amplitude
signal (V
CC
- V
EE
) can then be switched by the small logical amplitude (V
CC
- GND) control signal.
For example, in the case of V
CC
= 5 V, GND = 0 V, V
EE
= -5 V, signals between -5 V and +5 V can be switched
from the logical circuit with a single power supply of 5 V. As the ON-resistance of each switch is low, they can be
connected to circuits with low input impedance.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3. Features
(1)
(2)
(3)
(4)
(5)
Low power dissipation: I
CC
= 4.0
µA
(max) (V
CC
= 5.5 V, V
EE
= GND, T
a
= 25
)
Compatible with TTL output: V
IH
= 2.0 V (min), V
IL
= 0.8 V (max)
Wide interfacing ability: LSTTL, NMOS, CMOS
Low ON-resistance: R
ON
= 135
Ω
(typ. V
IN
= V
EE
), 75
Ω
(typ. V
IN
= V
CC
) at V
CC
- V
EE
= 9 V
High noise immunity: THD = 0.020 % (typ.) at V
CC
- V
EE
= 9 V
4. Packaging
SOIC16
Start of commercial production
©2016 Toshiba Corporation
1
2016-04
2016-09-12
Rev.3.0
74HCT4051D,74HCT4052D
5. Pin Assignment
74HCT4051D
74HCT4052D
6. IEC Logic Symbol
74HCT4051D
74HCT4052D
7. Marking
74HCT4051D
74HCT4052D
©2016 Toshiba Corporation
2
2016-09-12
Rev.3.0
74HCT4051D,74HCT4052D
8. System Diagram
74HCT4051D
74HCT4052D
©2016 Toshiba Corporation
3
2016-09-12
Rev.3.0
74HCT4051D,74HCT4052D
9. Truth Table
Input
Inhibit
L
L
L
L
L
L
L
L
H
Input
C*
L
L
L
L
H
H
H
H
X
Input
B
L
L
H
H
L
L
H
H
X
Input
A
L
H
L
H
L
H
L
H
X
ON Channel
74HC4051D
0
1
2
3
4
5
6
7
None
ON Channel
74HC4052D
0X, 0Y
1X, 1Y
2X, 2Y
3X, 3Y
None
X:
*:
Don't care
Except 74HC4052D
10. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Supply voltage
Supply voltage
Input voltage
Switch I/O voltage
Input diode current
I/O diode current
Switch through current
V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
EE
V
CC
-V
EE
V
IN
V
I/O
I
IK
I
I/OK
I
T
I
CC
P
D
T
stg
Rating
-0.5 to 7.0
-7.0 to 0
-0.5 to 13.0
-0.5 to V
CC
+ 0.5
V
EE
- 0.5 to V
CC
+ 0.5
±20
±20
±25
±50
500
-65 to 150
Unit
V
V
V
V
V
mA
mA
mA
mA
mW
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
11. Operating Ranges (Note)
Characteristics
Supply voltage
Supply voltage
Supply voltage
Input voltage
Switch I/O voltage
Operating temperature
Input rise and fall times
Symbol
V
CC
V
EE
V
CC
-V
EE
V
IN
V
I/O
T
opr
t
r
,t
f
Rating
4.5 to 5.5
-6.0 to 0
4.5 to 11.0
0 to V
CC
V
EE
to V
CC
-40 to 85
0 to 50
Unit
V
V
V
V
V
µs
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
©2016 Toshiba Corporation
4
2016-09-12
Rev.3.0
74HCT4051D,74HCT4052D
12. Electrical Characteristics
12.1. DC Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
High-level input voltage
Low-level input voltage
ON-resistance
Symbol
V
IH
V
IL
R
ON
Test Condition
V
IN
= V
IH
or V
IL
V
I/O
= V
CC
to V
EE
I
I/O
≤
2 mA
V
IN
= V
IH
or V
IL
V
I/O
= V
EE
I
I/O
≤
2 mA
V
IN
= V
IH
or V
IL
V
I/O
= V
CC
I
I/O
≤
2 mA
∆R
ON
V
IN
= V
IH
or V
IL
V
I/O
= V
CC
to V
EE
I
I/O
≤
2 mA
V
OS
= V
CC
or GND
V
IS
= GND or V
CC
V
IN
= V
IH
or V
IL
V
OS
= V
CC
or GND
V
IN
= V
IH
or V
IL
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
GND
-4.5
-5.5
GND
-4.5
-5.5
GND
-4.5
-5.5
GND
-4.5
-5.5
GND
-5.5
GND
-5.5
GND
GND
-5.5
V
EE
(V)
V
CC
(V)
4.5 to 5.5
4.5 to 5.5
4.5
4.5
5.5
4.5
4.5
5.5
4.5
4.5
5.5
4.5
4.5
5.5
5.5
5.5
5.5
5.5
5.5
5.5
5.5
Min
2.0
Typ.
180
140
135
150
135
125
95
75
70
4
3
3
Max
0.8
240
190
180
200
170
170
130
100
100
5
4
4
±0.06
±0.1
±0.06
±0.1
±0.1
4.0
8.0
µA
µA
µA
µA
Ω
Unit
V
V
Ω
ON-resistance
ON-resistance
Difference of ON-resistance
between switches
Input/Output leakage current
(Switch OFF)
Input/Output leakage current
(Switch ON)
Control input leakage current
Quiescent supply current
I
OFF
I
I/O
I
IN
I
CC
12.2. DC Characteristics (Unless otherwise specified, T
a
= -40 to 85
)
Characteristics
High-level input voltage
Low-level input voltage
ON-resistance
Symbol
V
IH
V
IL
R
ON
Test Condition
V
IN
= V
IH
or V
IL
V
I/O
= V
CC
to V
EE
I
I/O
≤
2 mA
V
IN
= V
IH
or V
IL
V
I/O
= V
EE
I
I/O
≤
2 mA
V
IN
= V
IH
or V
IL
V
I/O
= V
CC
I
I/O
≤
2 mA
∆R
ON
V
IN
= V
IH
or V
IL
V
I/O
= V
CC
to V
EE
I
I/O
≤
2 mA
V
OS
= V
CC
or GND
V
IS
= GND or V
CC
V
IN
= V
IH
or V
IL
V
OS
= V
CC
or GND
V
IN
= V
IH
or V
IL
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
GND
-4.5
-5.5
GND
-4.5
-5.5
GND
-4.5
-5.5
GND
-4.5
-5.5
GND
-5.5
GND
-5.5
GND
GND
-5.5
V
EE
(V)
V
CC
(V)
4.5 to 5.5
4.5 to 5.5
4.5
4.5
5.5
4.5
4.5
5.5
4.5
4.5
5.5
4.5
4.5
5.5
5.5
5.5
5.5
5.5
5.5
5.5
5.5
Min
2.0
Max
0.8
300
240
225
250
215
215
165
125
125
±0.6
±1.0
±0.6
±1.0
±1.0
40.0
80.0
µA
µA
µA
µA
Ω
Unit
V
V
Ω
ON-resistance
ON-resistance
Difference of ON-resistance
between switches
Input/Output leakage current
(Switch OFF)
Input/Output leakage current
(Switch ON)
Control input leakage current
Quiescent supply current
I
OFF
I
I/O
I
IN
I
CC
©2016 Toshiba Corporation
5
2016-09-12
Rev.3.0
NXP MCU
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