SKW07N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode
Lower
E
off
compared to previous generation
Short circuit withstand time – 10
s
Designed for:
- Motor controls
- Inverter
- SMPS
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
1
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
SKW07N120
V
CE
1200V
I
C
8A
E
off
0.7mJ
T
j
150C
Marking
K07N120
Package
PG-TO-247-3
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25C
T
C
= 100C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
1200V,
T
j
150C
Diode forward current
T
C
= 25C
T
C
= 100C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
Power dissipation
T
C
= 25C
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
T
j
,
T
stg
T
s
-55...+150
260
C
2
Symbol
V
CE
I
C
Value
1200
16.5
7.9
Unit
V
A
I
Cpul s
-
I
F
27
27
13
7
I
Fpul s
V
GE
t
SC
P
tot
27
20
10
125
V
s
W
V
GE
= 15V, 100V
V
CC
1200V,
T
j
150C
1
2
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2_3
12.06.2013
IFAG IPC TD VLS
SKW07N120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
R
thJA
40
R
thJCD
2.5
R
thJC
1
K/W
Symbol
Conditions
Max. Value
Unit
Electrical Characteristic,
at
T
j
= 25
C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V ,
I
C
= 5 00
A
V
CE(sat)
V
G E
= 15 V ,
I
C
= 8 A
T
j
=2 5
C
T
j
=1 5 0 C
Diode forward voltage
V
F
V
G E
= 0V ,
I
F
= 7 A
T
j
=2 5
C
T
j
=1 5 0 C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 35 0
A
,
V
C E
=
V
G E
V
C E
=1200V,V
G E
=0V
T
j
=2 5
C
T
j
=1 5 0 C
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
Symbol
Conditions
Value
min.
1200
2.5
-
typ.
-
3.1
3.7
2.0
-
3
-
-
-
1.75
4
-
-
-
6
-
-
-
-
-
720
90
40
70
13
75
5
max.
-
3.6
4.3
2.4
Unit
V
A
100
400
100
-
870
110
50
90
-
-
nC
nH
A
nA
S
pF
I
GES
g
fs
C
iss
C
oss
C
rss
Q
Gate
L
E
I
C(SC)
V
C E
=0V,V
G E
=20V
V
C E
= 20 V ,
I
C
= 8 A
V
C E
= 25 V ,
V
G E
= 0V ,
f=
1 MH z
V
C C
= 96 0 V,
I
C
=8 A
V
G E
= 15 V
V
G E
= 15 V ,t
S C
10
s
10 0 V
V
C C
12 0 0 V,
T
j
1 5 0 C
-
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2_3
12.06.2013
IFAG IPC TD VLS
SKW07N120
Switching Characteristic, Inductive Load,
at
T
j
=25
C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
F
Q
rr
I
rrm
d i
r r
/d t
T
j
=2 5
C
,
V
R
= 8 00 V ,
I
F
= 8 A,
d i
F
/ d t
=4 0 0 A/
s
-
-
-
-
-
-
0.3
9
400
C
A
A/s
60
ns
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=2 5
C
,
V
C C
= 80 0 V,
I
C
= 8 A,
V
G E
= 15 V /0 V ,
R
G
= 47
,
1)
L
=1 8 0n H,
1)
C
= 4 0p F
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
27
29
440
21
0.6
0.4
1.0
35
38
570
27
0.8
0.55
1.35
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
Switching Characteristic, Inductive Load,
at
T
j
=150
C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=1 5 0 C
V
C C
= 80 0 V,
I
C
= 8 A,
V
G E
= 15 V /0 V ,
R
G
= 47
,
1)
L
=1 8 0n H,
1)
C
= 4 0p F
Energy losses include
“tail” and diode
reverse recovery.
T
j
=1 5 0 C
V
R
= 8 00 V ,
I
F
= 8 A,
d i
F
/ d t
=5 0 0 A/
s
-
-
-
-
-
-
-
30
26
490
30
1.0
0.7
1.7
36
31
590
36
1.2
0.9
2.1
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
F
1)
-
-
-
-
-
-
170
ns
Q
rr
I
rrm
d i
r r
/d t
1.1
15
110
C
A
A/s
Leakage inductance L
and stray capacity C
due to dynamic test circuit in figure E.
IFAG IPC TD VLS
3
Rev. 2_3
12.06.2013
SKW07N120
35A
I
c
30A
10A
t
p
=5
s
15
s
I
C
,
COLLECTOR CURRENT
20A
15A
T
C
=80°C
I
C
,
COLLECTOR CURRENT
25A
50
s
200
s
1A
1ms
T
C
=110°C
10A
5A
0A
10Hz
I
c
0.1A
DC
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
150C,
D =
0.5,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 47)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25C,
T
j
150C)
150W
20A
125W
P
tot
,
POWER DISSIPATION
100W
75W
I
C
,
COLLECTOR CURRENT
50°C
75°C
100°C
125°C
15A
10A
50W
5A
25W
0W
25°C
0A
25°C
50°C
75°C
100°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T
j
150C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
15V,
T
j
150C)
IFAG IPC TD VLS
4
Rev. 2_3
12.06.2013
SKW07N120
25A
25A
20A
20A
V
GE
=17V
I
C
,
COLLECTOR CURRENT
15A
10A
15V
13V
11V
9V
7V
I
C
,
COLLECTOR CURRENT
15A
10A
V
GE
=17V
15V
13V
11V
9V
7V
5A
5A
0A
0V
1V
2V
3V
4V
5V
6V
7V
0A
0V
1V
2V
3V
4V
5V
6V
7V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristics
(T
j
= 25C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristics
(T
j
= 150C)
V
CE(sat)
,
COLLECTOR
-
EMITTER SATURATION VOLTAGE
25A
6V
I
C
=16A
5V
20A
I
C
,
COLLECTOR CURRENT
4V
I
C
=8A
I
C
=4A
15A
T
J
=+150°C
T
J
=+25°C
10A
T
J
=-40°C
3V
2V
5A
1V
0A
3V
5V
7V
9V
11V
0V
-50°C
0°C
50°C
100°C
150°C
V
GE
,
GATE
-
EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(V
CE
= 20V)
T
j
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
GE
= 15V)
IFAG IPC TD VLS
5
Rev. 2_3
12.06.2013
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