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HIP6603BCBZ

产品描述Gate Drivers SYNCHCT BUCK MSFT DRVR FLEXIBLE G
产品类别模拟混合信号IC    驱动程序和接口   
文件大小676KB,共14页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
标准
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HIP6603BCBZ概述

Gate Drivers SYNCHCT BUCK MSFT DRVR FLEXIBLE G

HIP6603BCBZ规格参数

参数名称属性值
Brand NameIntersil
是否Rohs认证符合
厂商名称Renesas(瑞萨电子)
零件包装代码SOIC
包装说明SOP, SOP8,.25
针数8
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time1 week
高边驱动器YES
接口集成电路类型HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码R-PDSO-G8
JESD-609代码e3
长度4.9 mm
湿度敏感等级1
功能数量1
端子数量8
最高工作温度85 °C
最低工作温度
标称输出峰值电流0.73 A
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP8,.25
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
电源5/12,12 V
认证状态Not Qualified
座面最大高度1.75 mm
最大供电电压13.2 V
最小供电电压10.8 V
标称供电电压12 V
电源电压1-最大12 V
电源电压1-分钟5 V
表面贴装YES
温度等级OTHER
端子面层Matte Tin (Sn) - annealed
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间30
宽度3.9 mm

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HIP6601B, HIP6603B, HIP6604B
Synchronous Rectified BuckMOSFET Drivers
N O T R E C O MM E
NDED FOR NEW
DESIGNS
NO RECOMMEN
DED REPL ACEM
ENT
contact our Tech
nical Support C
enter at
1-888-INTERSIL
or www.intersil.c
om/tsc
DATASHEET
FN9072
Rev 9.00
December 10, 2015
The HIP6601B, HIP6603B and HIP6604B are high-
frequency, dual MOSFET drivers specifically designed to
drive two power N-Channel MOSFETs in a synchronous
rectified buck converter topology. These drivers combined
with a HIP63xx or the ISL65xx series of Multi-Phase Buck
PWM controllers and MOSFETs form a complete core-
voltage regulator solution for advanced microprocessors.
The HIP6601B drives the lower gate in a synchronous
rectifier to 12V, while the upper gate can be independently
driven over a range from 5V to 12V. The HIP6603B drives
both upper and lower gates over a range of 5V to 12V. This
drive-voltage flexibility provides the advantage of optimizing
applications involving trade-offs between switching losses
and conduction losses. The HIP6604B can be configured as
either a HIP6601B or a HIP6603B.
The output drivers in the HIP6601B, HIP6603B and
HIP6604B have the capacity to efficiently switch power
MOSFETs at frequencies up to 2MHz. Each driver is
capable of driving a 3000pF load with a 30ns propagation
delay and 50ns transition time. These products implement
bootstrapping on the upper gate with only an external
capacitor required. This reduces implementation complexity
and allows the use of higher performance, cost effective,
N-Channel MOSFETs. Adaptive shoot-through protection is
integrated to prevent both MOSFETs from conducting
simultaneously.
Features
• Drives Two N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• Internal Bootstrap Device
• Supports High Switching Frequency
- Fast Output Rise Time
- Propagation Delay 30ns
• Small 8 Ld SOIC and EPSOIC and 16 Ld QFN Packages
• Dual Gate-Drive Voltages for Optimal Efficiency
• Three-State Input for Output Stage Shutdown
• Supply Undervoltage Protection
• QFN Package
- Compliant to JEDEC PUB95 MO-220 QFN—Quad Flat
No Leads—Product Outline.
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile.
• Pb-Free (RoHS Compliant)
Applications
• Core Voltage Supplies for Intel Pentium® III, AMD®
Athlon™ Microprocessors
• High Frequency Low Profile DC/DC Converters
• High Current Low Voltage DC/DC Converters
Related Literature
• Technical Brief
TB363,
Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)
FN9072 Rev 9.00
December 10, 2015
Page 1 of 14

 
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