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HIP2101EIBZT

产品描述Gate Drivers 100V H-BRDG DRVR 8LD EP
产品类别模拟混合信号IC    驱动程序和接口   
文件大小661KB,共13页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
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HIP2101EIBZT概述

Gate Drivers 100V H-BRDG DRVR 8LD EP

HIP2101EIBZT规格参数

参数名称属性值
Brand NameIntersil
零件包装代码DFN, QFN, SOIC
包装说明LSOP, SOP8,.25
针数12, 16, 8
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time13 weeks
高边驱动器YES
接口集成电路类型HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码R-PDSO-G8
JESD-609代码e3
长度4.89 mm
湿度敏感等级2
功能数量1
端子数量8
最高工作温度125 °C
最低工作温度-40 °C
标称输出峰值电流2 A
封装主体材料PLASTIC/EPOXY
封装代码LSOP
封装等效代码SOP8,.25
封装形状RECTANGULAR
封装形式SMALL OUTLINE, LOW PROFILE
峰值回流温度(摄氏度)260
电源12 V
认证状态Not Qualified
座面最大高度1.68 mm
最大供电电压14 V
最小供电电压9 V
标称供电电压12 V
表面贴装YES
技术CMOS
温度等级AUTOMOTIVE
端子面层Matte Tin (Sn) - annealed
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间30
断开时间0.056 µs
接通时间0.056 µs
宽度3.9 mm
Base Number Matches1

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DATASHEET
HIP2101
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver
The HIP2101 is a high frequency, 100V Half Bridge
N-Channel power MOSFET driver IC. It is equivalent to the
HIP2100 with the added advantage of full TTL/CMOS
compatible logic input pins. The low-side and high-side gate
drivers are independently controlled and matched to 13ns.
This gives users total control over dead-time for specific
power circuit topologies. Undervoltage protection on both
the low-side and high-side supplies force the outputs low. An
on-chip diode eliminates the discrete diode required with
other driver ICs. A new level-shifter topology yields the low-
power benefits of pulsed operation with the safety of DC
operation. Unlike some competitors, the high-side output
returns to its correct state after a momentary undervoltage of
the high-side supply.
FN9025
Rev 9.00
November 12, 2015
Features
• Drives N-Channel MOSFET Half Bridge
• SOIC, EPSOIC, QFN and DFN Package Options
• SOIC, EPSOIC and DFN Packages Compliant with 100V
Conductor Spacing Guidelines of IPC-2221
• Pb-free Product Available
(RoHS Compliant)
• Bootstrap Supply Max Voltage to 114VDC
• On-Chip 1 Bootstrap Diode
• Fast Propagation Times for Multi-MHz Circuits
• Drives 1000pF Load with Rise and Fall Times Typ. 10ns
• TTL/CMOS Input Thresholds Increase Flexibility
Ordering Information
PART NUMBER
HIP2101IB
(No
longer available,
recommended
replacement:
HIP2101IBZ)
HIP2101IBZ (Note 1)
HIP2101EIB
(No
longer available,
recommended
replacement:
HIP2101EIBZ)
HIP2101EIBZ
(Note 1)
HIP2101IRZ (Note 1)
HIP2101IR4Z
(Note 1)
NOTES:
1.
Intersil Pb-free products employ special Pb-free material sets;
molding compounds/die attach materials and 100% matte tin
plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations.
Intersil Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020C.
2. Add “T” suffix for Tape and Reel packing option.
TEMP.
RANGE (°C)
-40 to 125
PACKAGE
8 Ld SOIC
PKG.
DWG. #
M8.15
• Independent Inputs for Non-Half Bridge Topologies
• No Start-Up Problems
• Outputs Unaffected by Supply Glitches, HS Ringing Below
Ground, or HS Slewing at High dv/dt
• Low Power Consumption
• Wide Supply Range
-40 to 125
-40 to 125
8 Ld SOIC (Pb-free) M8.15
8 Ld EPSOIC
M8.15C
• Supply Undervoltage Protection
• 3 Output Driver Resistance
• QFN/DFN Package:
- Compliant to JEDEC PUB95 MO-220
QFN - Quad Flat No Leads - Package Outline
- Near Chip Scale Package footprint, which improves
PCB efficiency and has a thinner profile
-40 to 125
-40 to 125
-40 to 125
8 Ld EPSOIC
(Pb-free)
16 Ld 5x5 QFN
(Pb-free)
12 Ld 4x4 DFN
(Pb-free)
M8.15C
L16.5x5
L12.4x4A
Applications
• Telecom Half Bridge Power Supplies
• Avionics DC-DC Converters
• Two-Switch Forward Converters
• Active Clamp Forward Converters
FN9025 Rev 9.00
November 12, 2015
Page 1 of 13

HIP2101EIBZT相似产品对比

HIP2101EIBZT HIP2101IBZT7A HIP2101IBZT HIP2101IRZ
描述 Gate Drivers 100V H-BRDG DRVR 8LD EP Gate Drivers LEAD-FREE VERSION, 100V HALFBRIDGE DRIVER, 250pc T&R Gate Drivers VER 100V HALFBRDG DR VR Gate Drivers 100V H-BRDG DRVR 5X5 MLFP
Brand Name Intersil Renesas Intersil Intersil
零件包装代码 DFN, QFN, SOIC SOICN DFN, QFN, SOIC DFN, QFN, SOIC
包装说明 LSOP, SOP8,.25 , SOP, SOP8,.25 HVQCCN, LCC16,.2SQ,32
针数 12, 16, 8 8 12, 16, 8 12, 16, 8
Reach Compliance Code compliant compliant compliant compliant
JESD-609代码 e3 e3 e3 e3
湿度敏感等级 2 1 1 3
端子面层 Matte Tin (Sn) - annealed Matte Tin (Sn) Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed
ECCN代码 EAR99 - EAR99 EAR99
Factory Lead Time 13 weeks - 1 week 1 week
高边驱动器 YES - YES YES
接口集成电路类型 HALF BRIDGE BASED MOSFET DRIVER - HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码 R-PDSO-G8 - R-PDSO-G8 S-XQCC-N16
长度 4.89 mm - 4.9 mm 5 mm
功能数量 1 - 1 1
端子数量 8 - 8 16
最高工作温度 125 °C - 125 °C 125 °C
最低工作温度 -40 °C - -40 °C -40 °C
标称输出峰值电流 2 A - 2 A 2 A
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY UNSPECIFIED
封装代码 LSOP - SOP HVQCCN
封装等效代码 SOP8,.25 - SOP8,.25 LCC16,.2SQ,32
封装形状 RECTANGULAR - RECTANGULAR SQUARE
封装形式 SMALL OUTLINE, LOW PROFILE - SMALL OUTLINE CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度) 260 - 260 260
电源 12 V - 12 V 12 V
认证状态 Not Qualified - Not Qualified Not Qualified
座面最大高度 1.68 mm - 1.75 mm 1 mm
最大供电电压 14 V - 14 V 14 V
最小供电电压 9 V - 9 V 9 V
标称供电电压 12 V - 12 V 12 V
表面贴装 YES - YES YES
技术 CMOS - CMOS CMOS
温度等级 AUTOMOTIVE - AUTOMOTIVE AUTOMOTIVE
端子形式 GULL WING - GULL WING NO LEAD
端子节距 1.27 mm - 1.27 mm 0.8 mm
端子位置 DUAL - DUAL QUAD
处于峰值回流温度下的最长时间 30 - 30 30
断开时间 0.056 µs - 0.056 µs 0.056 µs
接通时间 0.056 µs - 0.056 µs 0.056 µs
宽度 3.9 mm - 3.9 mm 5 mm
厂商名称 - Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子)

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