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HIP2101IBZT7A

产品描述Gate Drivers LEAD-FREE VERSION, 100V HALFBRIDGE DRIVER, 250pc T&R
产品类别模拟混合信号IC    驱动程序和接口   
文件大小661KB,共13页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
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HIP2101IBZT7A概述

Gate Drivers LEAD-FREE VERSION, 100V HALFBRIDGE DRIVER, 250pc T&R

HIP2101IBZT7A规格参数

参数名称属性值
Brand NameRenesas
厂商名称Renesas(瑞萨电子)
零件包装代码SOICN
包装说明,
针数8
制造商包装代码M8.158
Reach Compliance Codecompliant
Samacsys DescriptionHalf, Full Bridge and Three Phase Drivers 100V/2A Peak High-Frequency Half Bridge Driver with TTL Logic Inputs
JESD-609代码e3
湿度敏感等级1
端子面层Matte Tin (Sn)

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DATASHEET
HIP2101
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver
The HIP2101 is a high frequency, 100V Half Bridge
N-Channel power MOSFET driver IC. It is equivalent to the
HIP2100 with the added advantage of full TTL/CMOS
compatible logic input pins. The low-side and high-side gate
drivers are independently controlled and matched to 13ns.
This gives users total control over dead-time for specific
power circuit topologies. Undervoltage protection on both
the low-side and high-side supplies force the outputs low. An
on-chip diode eliminates the discrete diode required with
other driver ICs. A new level-shifter topology yields the low-
power benefits of pulsed operation with the safety of DC
operation. Unlike some competitors, the high-side output
returns to its correct state after a momentary undervoltage of
the high-side supply.
FN9025
Rev 9.00
November 12, 2015
Features
• Drives N-Channel MOSFET Half Bridge
• SOIC, EPSOIC, QFN and DFN Package Options
• SOIC, EPSOIC and DFN Packages Compliant with 100V
Conductor Spacing Guidelines of IPC-2221
• Pb-free Product Available
(RoHS Compliant)
• Bootstrap Supply Max Voltage to 114VDC
• On-Chip 1 Bootstrap Diode
• Fast Propagation Times for Multi-MHz Circuits
• Drives 1000pF Load with Rise and Fall Times Typ. 10ns
• TTL/CMOS Input Thresholds Increase Flexibility
Ordering Information
PART NUMBER
HIP2101IB
(No
longer available,
recommended
replacement:
HIP2101IBZ)
HIP2101IBZ (Note 1)
HIP2101EIB
(No
longer available,
recommended
replacement:
HIP2101EIBZ)
HIP2101EIBZ
(Note 1)
HIP2101IRZ (Note 1)
HIP2101IR4Z
(Note 1)
NOTES:
1.
Intersil Pb-free products employ special Pb-free material sets;
molding compounds/die attach materials and 100% matte tin
plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations.
Intersil Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020C.
2. Add “T” suffix for Tape and Reel packing option.
TEMP.
RANGE (°C)
-40 to 125
PACKAGE
8 Ld SOIC
PKG.
DWG. #
M8.15
• Independent Inputs for Non-Half Bridge Topologies
• No Start-Up Problems
• Outputs Unaffected by Supply Glitches, HS Ringing Below
Ground, or HS Slewing at High dv/dt
• Low Power Consumption
• Wide Supply Range
-40 to 125
-40 to 125
8 Ld SOIC (Pb-free) M8.15
8 Ld EPSOIC
M8.15C
• Supply Undervoltage Protection
• 3 Output Driver Resistance
• QFN/DFN Package:
- Compliant to JEDEC PUB95 MO-220
QFN - Quad Flat No Leads - Package Outline
- Near Chip Scale Package footprint, which improves
PCB efficiency and has a thinner profile
-40 to 125
-40 to 125
-40 to 125
8 Ld EPSOIC
(Pb-free)
16 Ld 5x5 QFN
(Pb-free)
12 Ld 4x4 DFN
(Pb-free)
M8.15C
L16.5x5
L12.4x4A
Applications
• Telecom Half Bridge Power Supplies
• Avionics DC-DC Converters
• Two-Switch Forward Converters
• Active Clamp Forward Converters
FN9025 Rev 9.00
November 12, 2015
Page 1 of 13

HIP2101IBZT7A相似产品对比

HIP2101IBZT7A HIP2101IBZT HIP2101IRZ HIP2101EIBZT
描述 Gate Drivers LEAD-FREE VERSION, 100V HALFBRIDGE DRIVER, 250pc T&R Gate Drivers VER 100V HALFBRDG DR VR Gate Drivers 100V H-BRDG DRVR 5X5 MLFP Gate Drivers 100V H-BRDG DRVR 8LD EP
Brand Name Renesas Intersil Intersil Intersil
零件包装代码 SOICN DFN, QFN, SOIC DFN, QFN, SOIC DFN, QFN, SOIC
包装说明 , SOP, SOP8,.25 HVQCCN, LCC16,.2SQ,32 LSOP, SOP8,.25
针数 8 12, 16, 8 12, 16, 8 12, 16, 8
Reach Compliance Code compliant compliant compliant compliant
JESD-609代码 e3 e3 e3 e3
湿度敏感等级 1 1 3 2
端子面层 Matte Tin (Sn) Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed
厂商名称 Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子) -
ECCN代码 - EAR99 EAR99 EAR99
Factory Lead Time - 1 week 1 week 13 weeks
高边驱动器 - YES YES YES
接口集成电路类型 - HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码 - R-PDSO-G8 S-XQCC-N16 R-PDSO-G8
长度 - 4.9 mm 5 mm 4.89 mm
功能数量 - 1 1 1
端子数量 - 8 16 8
最高工作温度 - 125 °C 125 °C 125 °C
最低工作温度 - -40 °C -40 °C -40 °C
标称输出峰值电流 - 2 A 2 A 2 A
封装主体材料 - PLASTIC/EPOXY UNSPECIFIED PLASTIC/EPOXY
封装代码 - SOP HVQCCN LSOP
封装等效代码 - SOP8,.25 LCC16,.2SQ,32 SOP8,.25
封装形状 - RECTANGULAR SQUARE RECTANGULAR
封装形式 - SMALL OUTLINE CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, LOW PROFILE
峰值回流温度(摄氏度) - 260 260 260
电源 - 12 V 12 V 12 V
认证状态 - Not Qualified Not Qualified Not Qualified
座面最大高度 - 1.75 mm 1 mm 1.68 mm
最大供电电压 - 14 V 14 V 14 V
最小供电电压 - 9 V 9 V 9 V
标称供电电压 - 12 V 12 V 12 V
表面贴装 - YES YES YES
技术 - CMOS CMOS CMOS
温度等级 - AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
端子形式 - GULL WING NO LEAD GULL WING
端子节距 - 1.27 mm 0.8 mm 1.27 mm
端子位置 - DUAL QUAD DUAL
处于峰值回流温度下的最长时间 - 30 30 30
断开时间 - 0.056 µs 0.056 µs 0.056 µs
接通时间 - 0.056 µs 0.056 µs 0.056 µs
宽度 - 3.9 mm 5 mm 3.9 mm
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