2N2369A
w w w. c e n t r a l s e m i . c o m
SILICON
NPN TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2369A is a
silicon epitaxial planar NPN transistor designed for ultra
high speed saturated switching applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
BVCBO
BVCES
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
ICM
PD
PD
TJ, Tstg
Θ
JA
Θ
JC
otherwise noted)
MIN
40
40
15
4.5
200
500
360
1.2
-65 to +200
486
146
UNITS
V
V
V
V
mA
mA
mW
W
°C
°C/W
°C/W
CHARACTERISTICS:
(TA=25°C unless
TEST CONDITIONS
VCB=20V
VCB=20V, TA=150°C
IC=10μA
IC=10μA
IC=10mA
IE=10μA
IC=10mA, IB=1.0mA
IC=10mA, IB=1.0mA, TA=125°C
IC=30mA, IB=3.0mA
IC=100mA, IB=10mA
IC=10mA, IB=1.0mA
IC=30mA, IB=3.0mA
IC=100mA, IB=10mA
VCE=1.0V, IC=10mA
VCE=0.35V, IC=10mA, TA=–55°C
VCE=0.4V, IC=30mA
VCE=1.0V, IC=100mA
MAX
400
30
40
40
15
4.5
200
300
250
500
850
1.15
1.6
120
700
UNITS
nA
μA
V
V
V
V
mV
mV
mV
mV
mV
V
V
40
20
30
20
R1 (23-June 2014)
2N2369A
SILICON
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
fT
VCE=10V, IC=10mA, f=100MHz
500
Cob
VCB=5.0V, IE=0, f=140kHz
4.0
ton
VCC=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA
12
toff
VCC=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA
18
ts
VCC=10V, IC=10mA, IB1=IB2=10mA
13
UNITS
MHz
pF
ns
ns
ns
TO-18 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
R1 (23-June 2014)
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OUTSTANDING SUPPORT AND SUPERIOR SERVICES
PRODUCT SUPPORT
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DESIGNER SUPPORT/SERVICES
Central’s applications engineering team is ready to discuss your design challenges. Just ask.
• Free quick ship samples (2
nd
day air)
• Special wafer diffusions
• Online technical data and parametric search
• PbSn plating options
• SPICE models
• Package details
• Custom electrical curves
• Application notes
• Environmental regulation compliance
• Application and design sample kits
• Customer specific screening
• Custom product and package development
• Up-screening capabilities
REQUESTING PRODUCT PLATING
1.
2.
If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
CONTACT US
Corporate Headquarters & Customer Support Team
Central Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Main Tel: (631) 435-1110
Main Fax: (631) 435-1824
Support Team Fax: (631) 435-3388
www.centralsemi.com
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www.centralsemi.com/wwreps
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