IRFHM8235PbF
V
DSS
V
GS
max
R
DS(on)
max
(@ V
GS
= 10V)
(@ V
GS
= 4.5V)
Qg
(typical)
I
D
(@T
C (Bottom)
= 25°C)
25
±20
7.7
13.4
7.7
25
nC
A
V
V
m
S
HEXFET
®
Power MOSFET
S
S
G
D
D
D
D
D
PQFN 3.3X3.3 mm
Applications
Control MOSFET for synchronous buck converter
Features
Low Thermal Resistance to PCB (<4.1°C/W)
Low Profile (<1.05mm)
Industry-Standard Pin out
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Consumer Qualification
Benefits
Enable better Thermal Dissipation
Increased Power Density
results in Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFHM8235PbF
Package Type
PQFN 3.3 mm x 3.3 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM8235TRPbF
Absolute Maximum Ratings
Parameter
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
16
13
Units
V
50
32
25
240
3.0
30
0.024
-55 to + 150
W
W/°C
°C
A
Notes
through
are on page 10
1
2016-2-23
IRFHM8235PbF
Min.
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
43
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
19
6.2
10.3
1.8
-5.9
–––
–––
–––
–––
–––
16
7.7
1.9
1.3
2.7
1.5
4.0
6.4
1.6
7.9
16
7.5
5.2
1040
300
120
Max.
–––
–––
7.7
13.4
2.35
–––
1.0
150
100
-100
–––
–––
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 20A
m
V
GS
= 4.5V, I
D
= 16A
V
V = V
GS
, I
D
= 25µA
mV/°C
DS
V
DS
= 20V, V
GS
= 0V
µA
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
nA
V
GS
= -20V
S
V
DS
= 10V, I
D
= 20A
nC V
GS
= 10V, V
DS
= 13V, I
D
= 20A
V
DS
= 13V
V
GS
= 4.5V
nC
I
D
= 20A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
BV
DSS
Breakdown Voltage Temp. Coefficient
BV
DSS
/T
J
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nC
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
I
D
= 20A
ns
R
G
=1.8
V
GS
= 0V
pF
V
DS
= 10V
ƒ = 1.0MHz
Avalanche Characteristics
E
AS
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
41
Units
mJ
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
Reverse Recovery Time
t
rr
Q
rr
Reverse Recovery Charge
Thermal Resistance
Parameter
R
JC
(Bottom) Junction-to-Case
Junction-to-Case
R
JC
(Top)
R
JA
R
JA
(<10s)
Junction-to-Ambient
Junction-to-Ambient
Min. Typ. Max. Units
–––
–––
–––
–––
–––
Conditions
MOSFET symbol
––– 25
showing the
A
integral reverse
––– 240
p-n junction diode.
––– 1.0
V T
J
= 25°C, I
S
= 20A, V
GS
= 0V
10
15
ns T
J
= 25°C, I
F
= 20A, V
DD
= 13V
4.9
7.4
nC di/dt = 300A/µs
Typ.
–––
–––
–––
–––
Max.
4.1
42
42
28
D
G
S
Units
°C/W
2
2016-2-23
1000
TOP
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
IRFHM8235PbF
1000
TOP
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
100
10
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
2.5V
1
1
2.5V
0.1
60µs
PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
0.1
1
60µs
PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.6
ID = 20A
VGS = 10V
ID, Drain-to-Source Current (A)
100
1.4
1.2
10
TJ = 150°C
TJ = 25°C
1
VDS = 10V
60µs PULSE WIDTH
0.1
1.0
2.5
4.0
5.5
7.0
8.5
10.0
11.5
VGS, Gate-to-Source Voltage (V)
1.0
0.8
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
C iss = Cgs + C gd , Cds SHORTED
C rss = Cgd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 20A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 20V
VDS= 13V
VDS= 5.0V
C, Capacitance (pF)
1000
Ciss
Coss
Crss
100
10
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0
2
4
6
8
10 12 14 16 18 20
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2016-2-23
1000
IRFHM8235PbF
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ISD, Reverse Drain Current (A)
100
TJ = 150°C
10
TJ = 25°C
100
100µsec
1msec
Limited by source
bonding technology
10
1
10msec
DC
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
0.01
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
55
VGS(th), Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
2.8
Limited by source
bonding technology
44
ID , Drain Current (A)
2.4
33
2.0
22
1.6
ID = 25µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
11
1.2
0
25
50
75
100
125
150
TC , Case Temperature (°C)
0.8
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
10
Fig 10.
Threshold Voltage Vs. Temperature
Thermal Response ( ZthJC ) °C/W
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
2016-2-23
)
RDS(on), Drain-to -Source On Resistance (m
IRFHM8235PbF
24.0
EAS , Single Pulse Avalanche Energy (mJ)
180
ID = 20A
160
140
120
100
80
60
40
20
0
2
4
6
8
10
12
14
16
18
20
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
ID
TOP
4.0A
8.6A
BOTTOM 20A
20.0
16.0
12.0
TJ = 125°C
8.0
4.0
0.0
TJ = 25°C
VGS, Gate -to -Source Voltage (V)
Fig 12.
On-Resistance vs. Gate Voltage
100
Fig 13.
Maximum Avalanche Energy vs. Drain Current
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 125°C and
Tstart =25°C (Single Pulse)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14. Single avalanche event: pulse current vs. pulse width
5
2016-2-23
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
