BFN27
PNP Silicon High-Voltage Transistors
•
Suitable for video output stages in TV sets
and switching power supplies
•
High breakdown voltage
•
Low collector-emitter saturation voltage
•
Complementary types: BFN26 (NPN)
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
3
1
2
Type
BFN27
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Marking
FLs
1=B
Pin Configuration
2=E
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Symbol
R
thJS
Package
SOT23
Value
300
300
5
200
500
100
200
360
150
mW
°C
mA
Unit
V
3=C
Peak collector current,
t
p
≤
10 ms
Base current
Peak base current
Total power dissipation-
T
S
≤
74 °C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
-65 ... 150
Value
≤
210
Unit
K/W
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
1
2011-12-19
BFN27
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
-
-
Collector-emitter breakdown voltage
V
(BR)CEO
300
I
C
= 1 mA,
I
B
= 0
Unit
V
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0
V
(BR)CBO
V
(BR)EBO
I
CBO
300
5
-
-
-
-
µA
Emitter-base breakdown voltage
I
E
= 100 µA,
I
C
= 0
Collector-base cutoff current
V
CB
= 250 V,
I
E
= 0
V
CB
= 250 V,
I
E
= 0 ,
T
A
= 150 °C
-
-
I
EBO
h
FE
-
-
-
0.1
20
100
nA
-
Emitter-base cutoff current
V
EB
= 5 V,
I
C
= 0
-
DC current gain
1)
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 30 mA,
V
CE
= 10 V
25
40
30
V
CEsat
V
BEsat
-
-
-
-
-
-
-
-
0.5
0.9
V
Collector-emitter saturation voltage
1)
I
C
= 20 mA,
I
B
= 2 mA
-
-
Base emitter saturation voltage
1)
I
C
= 20 mA,
I
B
= 2 mA
AC Characteristics
Transition frequency
I
C
= 20 MHz,
V
CE
= 10 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 30 V,
f
= 1 MHz
1
Pulse
f
T
C
cb
-
-
100
2.5
-
-
MHz
pF
test: t < 300µs; D < 2%
2
2011-12-19
BFN27
DC current gain
h
FE
=
ƒ
(I
C
)
V
CE
= 10 V
10
3
5
h
FE
10
2
I
C
100 µs
BFN 25/27
EHP00634
Operating range
I
C
=
ƒ
(V
CEO
)
T
A
= 25°C,
D
= 0
10
3
mA
10 µs
10
2
5
10
1
1 ms
DC
10
1
5
10
0
10
0
-1
10
5 10
0
5 10
1
5 10
Ι
C
2
mA 10
3
10
-1 0
10
10
1
10
2
V
10
3
V
CE
Collector current
I
C
=
ƒ
(V
BE
)
V
CE
= 10V
10
3
mA
BFN 25/27
EHP00632
Collector cutoff current
I
CBO
=
ƒ
(T
A
)
V
CBO
= 200 V
10
4
nA
10
3
5
10
2
5
10
1
5
10
0
5
10
-1
typ
BFN 25/27
EHP00633
Ι
C
10
2
5
Ι
CBO
max
10
1
5
10
0
5
10
-1
0
0.5
1.0
V
BE
V
1.5
0
50
100
˚C
150
T
A
3
2011-12-19
BFN27
Transition frequency
f
T
=
ƒ
(I
C
)
V
CE
= 10 V
10
3
MHz
C
CB
(C
EB
)
BFN 25/27
EHP00629
Collector-base capacitance
C
cb
=
ƒ
(V
CB
)
Emitter-base capacitance
C
eb
=
ƒ
(V
EB
)
90
pF
f
T
70
60
50
10
2
40
CEB
5
30
20
10
CCB
10
1
10
0
5
10
1
5
10
2
mA 5
10
3
0
0
4
8
12
16
V
22
Ι
C
V
CB
(V
EB
Total power dissipation
P
tot
=
ƒ
(T
S
)
Permissible Pulse Load
R
thJS
=
ƒ
(t
p
)
400
10
3
K/W
mW
300
10
2
250
R
thJS
10
1
P
tot
200
150
10
0
100
50
10
-1 -6
10
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
4
2011-12-19
BFN27
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ
(t
p
)
10
3
P
tot max
5
P
tot DC
BFN 25/27
EHP00630
t
p
D
=
T
t
p
T
10
2
5
10
1
5
D
=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
t
p
10
0
5
2011-12-19
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