VS-20ETS..PbF, VS-20ETS..-M3, VS-20ATS..PbF, VS-20ATS..-M3
www.vishay.com
Vishay Semiconductors
High Voltage, Input Rectifier Diode, 20 A
FEATURES
• Very low forward voltage drop
2
3
2
3
• 150 °C max. operating junction temperature
• Glass passivated pellet chip junction
1
TO-220AC
Base
cathode
2
TO-220AB
Cathode to
base
2
1
• Designed and qualified
JEDEC
®
-JESD 47
according
to
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
1
Cathode
3
Anode
1
Anode
3
Anode
VS-20ETS..
VS-20ATS..
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
T
J
max.
Diode variation
TO-220AC, TO-220AB
20 A
800 V to 1200 V
1.1 V
300 A
150 °C
Single die, common anode
These devices are intended for use in main rectification
(single or three phase bridge).
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter T
A
= 55 °C, T
J
= 125 °C
common heatsink of 1 °C/W
SINGLE-PHASE BRIDGE
16.3
THREE-PHASE BRIDGE
21
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
10 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
VALUES
20
800/1200
300
1.0
-40 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-20ETS08PbF, VS-20ETS08-M3
VS-20ATS08PbF, VS-20ATS08-M3
VS-20ETS12PbF, VS-20ETS12-M3
VS-20ATS12PbF, VS-20ATS12-M3
V
RRM
, MAXIMUM
PEAK REVERSE VOLTAGE
V
800
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1
1300
I
RRM
AT 150 °C
mA
Revision: 12-Oct-16
Document Number: 94341
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETS..PbF, VS-20ETS..-M3, VS-20ATS..PbF, VS-20ATS..-M3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
20
250
300
316
442
4420
A
2
s
A
2
s
A
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
20 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.1
10.4
0.85
0.1
1.0
UNITS
V
m
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-220AC
Marking device
Case style TO-220AB
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, and greased
TEST CONDITIONS
VALUES
-40 to +150
1.3
°C/W
0.5
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
Mounting torque
20ETS08
20ETS12
20ATS08
20ATS12
Revision: 12-Oct-16
Document Number: 94341
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETS..PbF, VS-20ETS..-M3, VS-20ATS..PbF, VS-20ATS..-M3
www.vishay.com
Vishay Semiconductors
35
150
Maxiumum Average Forward
Power Loss (W)
R
thJC
(DC) = 1.3 °C/W
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
Ø
30
25
20
Conduction angle
DC
180°
120°
90°
60°
30°
RMS limit
15
10
5
0
Ø
30°
90
60°
90° 120°
180°
Conduction period
T
J
= 150 °C
0
5
10
15
20
25
0
2
4
6
8
10 12 14 16 18 20 22
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
300
R
thJC
(DC) = 1.3 °C/W
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
90
Ø
Peak Half Sine Wave
Forward Current (A)
250
At any rated load condition and
with
rated
V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Conduction period
200
150
30°
60°
90°
120°
180°
DC
100
50
0
5
10
15
20
25
30
35
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude
Half Cycle Current Pulse (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
30
300
Maxiumum Average Forward
Power Loss (W)
25
20
15
10
5
Peak Half Sine Wave
Forward Current (A)
180°
120°
90°
60°
30°
RMS limit
250
Maximum non-repetitive surge current
versus
pulse train duration.
Initial T
J
= 150 °C
No
voltage
reapplied
Rated
V
RRM
reapplied
200
150
Ø
Conduction angle
T
J
= 150 °C
0
100
50
0
4
8
12
16
20
24
0.01
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 12-Oct-16
Document Number: 94341
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETS..PbF, VS-20ETS..-M3, VS-20ATS..PbF, VS-20ATS..-M3
www.vishay.com
Vishay Semiconductors
1000
Instantaneous Forward Current (A)
T
J
= 25 °C
100
T
J
= 150 °C
10
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
10
Z
thJC
- Transient Thermal
Impedance (°C/W)
Steady state
value
(DC operation)
1
0.1
Single pulse
0.01
0.0001
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 12-Oct-16
Document Number: 94341
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETS..PbF, VS-20ETS..-M3, VS-20ATS..PbF, VS-20ATS..-M3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
20
2
-
-
-
E
3
T
4
S
5
12
6
PbF
7
Vishay Semiconductors product
Current rating (20 = 20 A)
Circuit configuration:
E = TO-220AC
A = TO-220AB
4
5
-
-
Package:
T = TO-220
Type of silicon:
S = standard recovery rectifier
08 = 800 V
12 = 1200 V
6
-
-
Voltage code x 100 = V
RRM
Environmental digit:
7
PbF = lead (Pb)-free and RoHS-compliant
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-20ETS08PbF
VS-20ETS08-M3
VS-20ATS08PbF
VS-20ATS08-M3
VS-20ETS12PbF
VS-20ETS12-M3
VS-20ATS12PbF
VS-20ATS12-M3
QUANTITY PER T/R
50
50
50
50
50
50
50
50
MINIMUM ORDER QUANTITY
1000
1000
1000
1000
1000
1000
1000
1000
PACKAGING DESCRIPTION
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
TO-220AC
TO-220AB
TO-220AC PbF
Part marking information
TO-220AB PbF
TO-220AC -M3
TO-220AB -M3
SPICE model
www.vishay.com/doc?95221
www.vishay.com/doc?95222
www.vishay.com/doc?95224
www.vishay.com/doc?95225
www.vishay.com/doc?95068
www.vishay.com/doc?95028
www.vishay.com/doc?96046
Revision: 12-Oct-16
Document Number: 94341
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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