BFR460L3
Low Noise Silicon Bipolar RF Transistor
•
For low voltage / low current applications
•
Ideal for VCO modules and low noise amplifiers
•
Low noise figure: 1.1 dB at 1.8 GHz
•
Excellent ESD performance
typical value 1500V (HBM)
•
High
f
T
of 22 GHz
•
Pb-free (RoHS compliant) and halogen-free thin small
leadless package
•
Qualification report according to AEC-Q101 available
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFR460L3
Parameter
Marking
AB
Pin Configuration
1=B
2=E
Symbol
V
CEO
3=C
Value
Package
TSLP-3-1
Unit
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Collector-emitter voltage
T
A
= 25 °C
T
A
= -55 °C
V
4.5
4.2
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
108°C
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
Stg
15
15
1.5
50
5
200
150
-55 ... 150
mW
°C
mA
Junction temperature
Storage temperature
1
T
S
is
measured on the collector lead at the soldering point to the pcb
1
2013-09-13
BFR460L3
Thermal Resistance
Parameter
Symbol
R
thJS
Value
Unit
Junction - soldering point
1)
210
K/W
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 15 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 0,5 V,
I
C
= 0
DC current gain
I
C
= 20 mA,
V
CE
= 3 V, pulse measured
1
For
Unit
max.
-
10
100
1
160
V
µA
nA
µA
-
typ.
5.8
-
-
-
120
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
4.5
-
-
-
90
the definition of
R
thJS
please refer to Application Note AN077 (Thermal Resistance Calculation)
2
2013-09-13
BFR460L3
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
AC Characteristics
(verified by random sampling)
Transition frequency
I
C
= 30 mA,
V
CE
= 3 V,
f
= 1 GHz
Collector-base capacitance
V
CB
= 3 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 3 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Minimum noise figure
I
C
= 5 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
f
= 1.8 GHz
f
= 3 GHz
Power gain, maximum stable
1)
I
C
= 20 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Power gain, maximum available
1)
I
C
= 20 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 3 GHz
Transducer gain
I
C
= 20 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1,8 GHz
f
= 3 GHz
Third order intercept point at output
2)
V
CE
= 3 V,
I
C
= 20 mA,
f
= 1.8 GHz
1dB compression point at output
I
C
= 20 mA,
V
CE
= 3 V,
f
= 1.8 GHz
1
G
1/2
ma
= |S
21
/
S
12
| (k-(k²-1) ),
G
ms
=
S
21
/
S
12
2
IP3 value depends on termination of all intermodulation
Unit
max.
-
0.45
GHz
pF
typ.
22
0.28
f
T
C
cb
16
-
C
ce
-
0.14
-
C
eb
-
0.55
-
NF
min
-
-
G
ms
-
1.1
1.35
16.0
-
-
-
dB
dB
G
ma
-
11
-
dB
|S
21e
|
2
-
-
IP3
P
-1dB
-
-
14
10
27
11.5
-
-
-
-
dB
dBm
frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
3
2013-09-13
BFR460L3
Total power dissipation
P
tot
=
ƒ
(T
S
)
Collector-base capacitance
C
cb
=
ƒ
(V
CB
)
f
= 1MHz
240
0.8
pF
mW
0.6
P
tot
160
Ccb
0.5
120
0.4
0.3
80
0.2
40
0.1
0
0
15
30
45
60
75
90 105 120
°C
150
0
0
2
4
6
8
10
V
VCB
14
T
S
Transition frequency
f
T
=
ƒ
(I
C
)
f
= 1 GHz
V
CE
= parameter in V
26
GHz
2 to 4V
1V
Power gain
G
ma
,
G
ms
, |S
21
|
2
=
ƒ
(f)
V
CE
= 3 V,
I
C
= 20 mA
50
dB
22
20
18
fT
40
35
G
16
14
12
10
8
6
4
2
0
5
10
15
20
25
30
35
mA
IC
30
25
20
15
10
5
0
0
|S21|²
Gma
Gms
45
1
2
3
4
GHz
f
6
4
2013-09-13
BFR460L3
Power gain
G
ma
,
G
ms
=
ƒ
(I
C
)
V
CE
= 3V
f
= parameter in GHz
24
dB
0.9
Power gain
G
ma
,
G
ms
=
ƒ
(V
CE
)
I
C
= 20 mA
f
= parameter in GHz
24
dB
0.9
20
18
G
G
20
18
1.8
16
1.8
16
14
12
10
8
6
4
0
14
12
10
8
2.4
3
4
5
6
2.4
3
4
5
6
4
6
2
40
0
0.5
1
1.5
2
2.5
3
3.5
V
VCE
5
10
15
20
25
30
mA
IC
4.5
5
2013-09-13
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