Freescale Semiconductor
Technical Data
Document Number: MRF5S4140H
Rev. 2, 5/2006
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 400 to 500 MHz. The high gain and broadband performance of
these devices make them ideal for large--signal, common--source amplifier
applications in 28--volt base station equipment.
•
Typical Single--Carrier N--CDMA Performance @ 465 MHz: V
DD
= 28 Volts,
I
DQ
= 1250 mA, P
out
= 28 Watts Avg., IS--95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 21 dB
Drain Efficiency — 30%
ACPR @ 750 kHz Offset — --47.6 dBc in 30 kHz Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 465 MHz, 140 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Lower Thermal Resistance Package
•
Low Gold Plating Thickness on Leads, 40
μ
″
Nominal.
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF5S4140HR3
MRF5S4140HSR3
465 MHz, 28 W AVG., 28 V
SINGLE N-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
ARCHIVE INFORMATION
CASE 465-
-06, STYLE 1
NI-
-780
MRF5S4140HR3
CASE 465A-
-06, STYLE 1
NI-
-780S
MRF5S4140HSR3
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
--0.5, +65
--0.5, +15
427
2.4
-- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 73°C, 140 W CW
Case Temperature 74°C, 28 W CW
Symbol
R
θJC
Value
(1,2)
0.41
0.47
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2006, 2010. All rights reserved.
MRF5S4140HR3 MRF5S4140HSR3
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
ARCHIVE INFORMATION
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 400
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1250 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 2.42 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
2.3
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
3
0.1
—
3
4
0.2
6.2
4
5
0.3
—
Vdc
Vdc
Vdc
S
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1250 mA, P
out
= 28 W Avg. N--CDMA,
f = 465 MHz, Single--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @
±750
kHz
Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally input matched.
G
ps
η
D
ACPR
IRL
20
28.5
—
—
21
30
--47.6
--14
23
—
--45
--9
dB
%
dBc
dB
MRF5S4140HR3 MRF5S4140HSR3
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
B2
V
BIAS
+
C18
C8
B1
Z9
RF
INPUT
C3
Z3
R1
Z4
Z5
Z6
Z7
Z10
C7
Z8
C9
C2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
C4
C5
C6
DUT
Z11
Z12
L1
C16
C17
+
C19
+
C20
+
C21
+
C22
V
SUPPLY
Z13 Z14
Z15
Z16
Z17
C14
Z18
Z19
RF
OUTPUT
Z1
C1
Z2
C10
C11
C12
C13
C15
ARCHIVE INFORMATION
Figure 1. MRF5S4140HR3(SR3) Test Circuit Schematic — 460-
-470 MHz
Table 5. MRF5S4140HR3(SR3) Test Circuit Component Designations and Values — 460-
-470 MHz
Part
B1, B2
C1, C14
C2, C13
C3
C4
C5
C6, C7
C8
C9, C10
C11
C12
C15
C16
C17
C18, C19, C20, C21
C22
L1
R1
Description
Ferrite Beads, Short
120 pF Chip Capacitors
0.8--8.0 pF Variable Capacitors, Gigatrim
18 pF Chip Capacitor
30 pF Chip Capacitor
24 pF Chip Capacitor
13 pF Chip Capacitors
0.02
μF,
50 V Chip Capacitor
22 pF Chip Capacitors
1.0 pF Chip Capacitor
5.6 pF Chip Capacitor
1.5 pF Chip Capacitor
47 pF Chip Capacitor
0.56
μF,
50 V Chip Capacitor
10
μF,
35 V Tantalum Chip Capacitors
470
μF,
63 V Electrolytic Capacitor
39 nH Inductor
100
Ω,
1/4 W Chip Resistor (1210)
Part Number
2743019447
100B121JP500X
27291SL
100B180JP500X
100B300JP500X
100B240JP500X
100B130JP500X
200B203MW50B
100B220JP500X
100B1R0JP500X
100B5R6JP500X
100B1R5JP500X
100B47JP500X
C1825C564J5GAC
T491D106K035AS
SME63V471M12X25LL
1812SMS--39N
Manufacturer
Fair--Rite
ATC
Johanson
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
Kemet
Kemet
United Chemi--Con
Coilcraft
MRF5S4140HR3 MRF5S4140HSR3
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
0.402″ x 0.080″ Microstrip
1.266″ x 0.080″ Microstrip
0.211″ x 0.220″ Microstrip
0.139″ x 0.220″ Microstrip
0.239″ x 0.220″ Microstrip
0.040″ x 0.640″ Microstrip
0.080″ x 0.640″ Microstrip
0.276″ x 0.640″ Microstrip
1.000″ x 0.226″ Microstrip
0.498″ x 0.630″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19
PCB
0.125″ x 0.220″ Microstrip
0.324″ x 0.220″ Microstrip
0.050″ x 0.220″ Microstrip
0.171″ x 0.080″ Microstrip
0.377″ x 0.080″ Microstrip
0.358″ x 0.080″ Microstrip
0.361″ x 0.080″ Microstrip
0.131″ x 0.080″ Microstrip
0.277″ x 0.080″ Microstrip
Arlon GX--0300--55--22, 0.030″,
ε
r
= 2.55
C18
C22
B2
C8
B1
C7
C1
C3
R1
C4
450 MHz
Rev. 0
Ver. B
C19 C20 C21
C17
C16
L1
C10
CUT OUT AREA
C11
C12
C13
+
ARCHIVE INFORMATION
C2
C5 C6
Figure 2. MRF5S4140HR3(SR3) Test Circuit Component Layout — 460-
-470 MHz
MRF5S4140HR3 MRF5S4140HSR3
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
C9
C14
C15
TYPICAL CHARACTERISTICS — 460-
-470 MHz
21.5
21
20.5
G
ps
, POWER GAIN (dB)
20
19.5
19
18.5
18
17.5
17
16.5
ALT1
430
440
450
460
470
480
16
η
D
V
DD
= 28 Vdc, P
out
= 28 W (Avg.)
I
DQ
= 1250 mA, N--CDMA IS--95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
ACPR
G
ps
38
35
32
29
26
--40
ACPR (dBc), ALT1 (dBc)
--45
--50
IRL
--55
--60
--65
--70
490
η
D
, DRAIN
EFFICIENCY (%)
--1
--3
--5
--7
--9
--11
--13
IRL, INPUT RETURN LOSS (dB)
ARCHIVE INFORMATION
f, FREQUENCY (MHz)
Figure 3. Single-
-Carrier N-
-CDMA Broadband Performance
@ P
out
= 28 Watts Avg.
20.8
20.3
19.8
G
ps
, POWER GAIN (dB)
19.3
18.8
18.3
17.8
17.3
16.8
16.3
15.8
430
440
ALT1
450
460
IRL
η
D
V
DD
= 28 Vdc, P
out
= 56 W (Avg.)
I
DQ
= 1250 mA, N--CDMA IS--95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
ACPR
G
ps
55
50
45
40
35
--35
--40
--45
--50
--55
480
--60
490
η
D
, DRAIN
EFFICIENCY (%)
ACPR (dBc), ALT1 (dBc)
--2
--4
--6
--8
--10
--12
--14
470
f, FREQUENCY (MHz)
Figure 4. Single-
-Carrier N-
-CDMA Broadband Performance
@ P
out
= 56 Watts Avg.
23
22
G
ps
, POWER GAIN (dB)
21
20
19
18
17
6
10
I
DQ
= 1850 mA
1550 mA
1250 mA
950 mA
650 mA
--10
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
--15
--20
--25
--30
--35
--40
--45
400
10
100
P
out
, OUTPUT POWER (WATTS) PEP
400
950 mA
1250 mA
I
DQ
= 650 mA
V
DD
= 28 Vdc, f1 = 465 MHz, f2 = 467.5 MHz
Two--Tone Measurements, 2.5 MHz Tone Spacing
1850 mA
1550 mA
V
DD
= 28 Vdc, f1 = 465 MHz, f2 = 467.5 MHz
Two--Tone Measurements, 2.5 MHz Tone Spacing
100
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two-
-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF5S4140HR3 MRF5S4140HSR3
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
IRL, INPUT RETURN LOSS (dB)
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