d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 73436
S09-0271-Rev. C, 16-Feb-09
www.vishay.com
1
Symbol
R
thJA
R
thJC
Typical
19
1.2
Maximum
24
1.5
Unit
Si7489DP
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 6.2 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 6.2 A
- 0.8
60
150
46
14
T
C
= 25 °C
- 28
- 40
- 1.2
90
225
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 50 V, R
L
= 8.1
Ω
I
D
≅
- 6.2 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
V
DD
= - 50 V, R
L
= 8.1
Ω
I
D
≅
- 6.2 A, V
GEN
= - 10 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= - 50 V, V
GS
= - 10 V, I
D
= - 7.8 A
V
DS
= - 50 V, V
GS
= - 4.5 V, I
D
= - 7.8 A
V
DS
= - 50 V, V
GS
= 0 V, f = 1 MHz
4600
230
175
106
54
14
26
4
15
20
110
100
42
160
100
100
25
30
165
150
65
240
150
150
ns
Ω
160
81
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 100 V, V
GS
= 0 V
V
DS
= - 100 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 7.8 A
V
GS
= - 4.5 V, I
D
= - 7.3 A
V
DS
= - 15 V, I
D
= - 7.8 A
- 40
0.033
0.038
38
0.041
0.047
-1
- 100
- 113
5.5
-3
± 100
-1
- 10
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73436
S09-0271-Rev. C, 16-Feb-09
Si7489DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
35
I
D
- Drain Current (A)
20
30
25
20
15
10
5
I
D
- Drain Current (A)
V
GS
= 10 thru 4 V
16
12
8
T
A
= 125 °C
4
25 °C
- 55 °C
3V
2V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.042
7000
6000
R
DS(on)
- On-Resistance (Ω)
0.040
V
GS
= 4.5 V
C - Capacitance (pF)
5000
4000
3000
2000
C
oss
1000
0.032
0
5
10
15
20
25
30
35
40
0
0
10
Transfer Characteristics
C
iss
0.038
0.036
V
GS
= 10 V
0.034
C
rss
20
30
40
50
60
70
80
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 7.8 A
8
V
DS
= 50 V
6
V
DS
= 80 V
4
R
DS(on)
- On-Resistance
(Normalized)
2.3
I
D
= 7.8 A
Capacitance
V
GS
- Gate-to-Source Voltage (V)
2.0
1.7
V
GS
= 10 V, 4.5 V
1.4
1.1
2
0.8
0
0
20
40
60
80
100
120
0.5
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 73436
S09-0271-Rev. C, 16-Feb-09
On-Resistance vs. Junction Temperature
www.vishay.com
3
Si7489DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
0.08
I
D
= 7.8 A
0.07
T
A
= 125 °C
0.06
I
S
- Source Current (A)
T
J
= 150 °C
10
0.05
0.04
T
A
= 25 °C
T
J
= 25 °C
0.03
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0.02
2
3
4
5
6
7
8
9
10
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
2.4
2.2
2.0
V
GS(th)
(V)
1.8
1.6
1.4
1.2
1.0
0.8
- 50
10
5
I
D
= 250 µA
Power (W)
35
30
25
20
15
On-Resistance vs. Gate-to-Source Voltage
- 25
0
25
50
75
100
125
150
175
0
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by
R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
10
I
D
- Drain Current (A)
100 µs
1 ms
10 ms
1
100 ms
1s
0.1
10 s
DC
0.01
T
A
= 25 °C
Single Pulse
0.001
0.1
1
10
100
1000
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73436
S09-0271-Rev. C, 16-Feb-09
Si7489DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
35
30
80
25
I
D
- Drain Current (A)
Power (W)
Package Limited
20
15
10
20
5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
60
100
40
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
100
Power Derating
I
C
- Peak Avalanche Current (A)
10
T
A
=
1
0.000001
L · I
A
BV - V
DD
0.00001
0.0001
0.001
0.01
T
A
- Time In Avalanche (s)
Single Pulse Avalanche Capability
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
中风发生时，一切都是以秒来计算的。延误治疗可能导致大脑重大损伤。伦敦大学医学院的一位博士Alistair McEwan已经获得行为医学研究所(Action Medical Research)的同意，为急救人员开发一种无线诊断系统来减少时间延误。感谢抗血栓药物，一些病人在病情发作的三个小时之内可以完全恢复。但出血也会导致中风。医生在治疗之前需要确定发病原因，因为不适当的服用抗血栓药物会加重损害。...[详细]
Microchip MCU
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