Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Toshiba(东芝) |
| 包装说明 | SSM, 2-2H1A, 3 PIN |
| 针数 | 3 |
| Reach Compliance Code | unknow |
| ECCN代码 | EAR99 |
| 其他特性 | BUILT-IN BIAS RESISTOR RATIO IS 0.47 |
| 最大集电极电流 (IC) | 0.1 A |
| 基于收集器的最大容量 | 6 pF |
| 集电极-发射极最大电压 | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 30 |
| JESD-30 代码 | R-PDSO-G3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | PNP |
| 最大功率耗散 (Abs) | 0.1 W |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 200 MHz |
| VCEsat-Max | 0.3 V |
| RN2117 | RN2114 | RN2115 | RN2116 | RN2118 | |
|---|---|---|---|---|---|
| 描述 | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 不符合 |
| 包装说明 | SSM, 2-2H1A, 3 PIN | SSM, 2-2H1A, 3 PIN | SSM, 2-2H1A, 3 PIN | SSM, 2-2H1A, 3 PIN | SSM, 2-2H1A, 3 PIN |
| 针数 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | BUILT-IN BIAS RESISTOR RATIO IS 0.47 | BUILT-IN BIAS RESISTOR RATIO IS 10 | BUILT-IN BIAS RESISTOR RATIO IS 4.55 | BUILT-IN BIAS RESISTOR RATIO IS 2.13 | BUILT-IN BIAS RESISTOR RATIO IS 0.21 |
| 最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
| 基于收集器的最大容量 | 6 pF | 6 pF | 6 pF | 6 pF | 6 pF |
| 集电极-发射极最大电压 | 50 V | 50 V | 50 V | 50 V | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 30 | 50 | 50 | 50 | 50 |
| JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 240 |
| 极性/信道类型 | PNP | PNP | PNP | PNP | PNP |
| 最大功率耗散 (Abs) | 0.1 W | 0.1 W | 0.1 W | 0.1 W | 0.1 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 200 MHz | 200 MHz | 200 MHz | 200 MHz | 200 MHz |
| VCEsat-Max | 0.3 V | 0.3 V | 0.3 V | 0.3 V | 0.3 V |
| 厂商名称 | Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) | - | Toshiba(东芝) |
嵌入式系统
嵌入式系统
嵌入式系统
微控制器 MCU
嵌入式系统
传感器
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
