1N4775 thru 1N4784A
8.5 Volt Temperature Compensated Zener
Reference Diodes
SCOTTSDALE DIVISION
DESCRIPTION
The 1N4775 thru 1N4784A series of Zero-TC Reference Diodes provides a
selection of 8.5 V nominal voltages and temperature coefficients to as low
as 0.0005%/
o
C for minimal voltage change with temperature when operated
at 7.5 mA. Options for screening similar to JAN, JANTX, JANTXV, and
JANS also exist by using MQ, MX, MV or MSP respectively for part number
prefixes and high reliability screening. Microsemi also offers numerous
other Zener Reference Diode products for a variety of other voltages from
6.2 V to 200 V
APPEARANCE
WWW .
Microsemi
.C
OM
DO-7
(DO-204AA)
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
•
•
•
•
JEDEC registered
1N4775 thru 1N4784A
series
Standard reference voltage of 8.5 V +/- 5%
Internal metallurgical bonds
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers. For example,
designate “MX1N4779A” for a JANTX, or
MV1N4784A for a JANTXV screen.
Radiation Hardened devices available by changing
the “1N” prefix to “RH”, e.g. RH4779A, RH4784A,
etc. Also consult factory for “RH” data sheet
brochure for other radiation hardened reference
diode products.
•
APPLICATIONS / BENEFITS
Provides minimal voltage changes over a broad
temperature range for instrumentation and other
circuit designs requiring a voltage reference
Temperature coefficient selections available from
0.01%/ºC to 0.0005%/ºC
Tight voltage tolerances available by adding
tolerance 1%, 2%, 3%, etc. after part number for
further identification, e.g. 1N4773A-2%, 1N4774A-
1%, 1N4769-3%, 1N4769A-1%, etc.
Flexible axial-leaded mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method 1020
•
•
•
•
•
MAXIMUM RATINGS
•
•
Operating & StorageTemperature: -65
o
C to +175
o
C
DC Power Dissipation: 250 mW @ T
L
= 25
o
C
NOTE: For optimum voltage-temperature stability,
the test current I
ZT
= 0.5 or 1.0 mA as shown in
Electrical Characteristics (less than 10 mW in
dissipated power)
Solder temperatures: 260
o
C for 10 s (maximum)
MECHANICAL AND PACKAGING
•
CASE: Hermetically sealed glass case with DO-7
(DO-204AA) package
•
TERMINALS: Tin-lead plated and solderable per
MIL-STD-750, Method 2026
•
MARKING: Part number and cathode band
•
POLARITY: Reference diode to be operated with
the banded end positive with respect to the
opposite end
•
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
•
WEIGHT: 0.2 grams.
•
See package dimensions on last page
1N4775 – 1N4784A
4775 – 1N4784A
•
Copyright
2003
8-19-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N4775 thru 1N4784A
8.5 Volt Temperature Compensated Zener
Reference Diodes
SCOTTSDALE DIVISION
*ELECTRICAL CHARACTERISTICS @ 25
o
C, unless otherwise specified
JEDEC
TYPE
NUMBER
ZENER
VOLTAGE
(Note 5)
V
Z
@ I
ZT
VOLTS
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
ZENER
TEST
CURRENT
I
ZT
mA
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
DYNAMIC
IMPEDANCE
Z
ZT
OHMS
200
200
200
200
200
200
200
200
200
200
100
100
100
100
100
100
100
100
100
100
MAXIMUM
REVERSE
CURRENT
I
R
@ 6 V
I
R
µA
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
MAXIMUM
VOLTAGE
TEMPERATURE
STABILITY
(Note 3 & 5)
∆V
ZT
mV
64
132
32
66
13
26
6
13
3
7
64
132
32
66
13
26
6
13
3
7
TEMPERATURE
RANGE
EFFECTIVE
TEMPERATURE
COMPENSIATIONS
α
VZ
%/ C
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
0.0005
0.0005
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
0.0005
0.0005
o
WWW .
Microsemi
.C
OM
1N4775
1N4775A
1N4776
1N4776A
1N4777
1N4777A
1N4778
1N4778A
1N4779
1N4779A
1N4780
1N4780A
1N4781
1N4781A
1N4782
1N4782A
1N4783
1N4783A
1N4784
1N4784A
C
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
o
*JEDEC Registered Data.
NOTES:
1.
2.
3.
4.
5.
Designate Radiation Hardened devices with “RH” prefix instead of “1N,” i.e., RH4784A. Consult factory for TX, TXV or
JANS equivalent SCDs.
Measured by superimposing I
Z
ac rms on I
Z
dc @ 25
o
C where I
Z
ac rms = 10% I
Z
dc.
Maximum allowable change between any two discrete temperatures over the specified temperature change.
When ordering devices with a tighter tolerance than specified, use a nominal center voltage of 8.4 volts.
Voltage measurements to be performed 15 seconds after application of dc current.
PACKAGE DIMENSIONS
1N4775 – 1N4784A
All dimensions in:
INCH
mm
Copyright
2003
8-19-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
