IPD50R650CE,IPD50R650CE pdf中文资料,IPD50R650CE引脚图,IPD50R650CE电路-Datasheet-电子工程世界

IPD50R650CE: 产品描述MOSFET N-Ch 500V 6.1A DPAK-2; 产品类别半导体分立半导体; 文件大小1MB，共13页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/; 标准

下载文档详细参数选型对比全文预览

IPD50R650CE在线购买

供应商	器件名称	价格	最低购买	库存
	IPD50R650CE	-	-	点击查看	点击购买

MOSFET N-Ch 500V 6.1A DPAK-2

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	Infineon(英飞凌)
产品种类 Product Category	MOSFET
RoHS	Details
技术 Technology	Si
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	TO-252-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	500 V
Id - Continuous Drain Current	9 A
Rds On - Drain-Source Resistance	590 mOhms
Vgs th - Gate-Source Threshold Voltage	2.5 V
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	15 nC
最小工作温度 Minimum Operating Temperature	- 55 C
最大工作温度 Maximum Operating Temperature	+ 150 C
Configuration	Single
Pd-功率耗散 Pd - Power Dissipation	69 W
Channel Mode	Enhancement
系列 Packaging	Cut Tape
系列 Packaging	MouseReel
系列 Packaging	Reel
高度 Height	2.3 mm
长度 Length	6.5 mm
Transistor Type	1 N-Channel
宽度 Width	6.22 mm
Fall Time	13 ns
Rise Time	5 ns
工厂包装数量 Factory Pack Quantity	2500
Typical Turn-Off Delay Time	27 ns
Typical Turn-On Delay Time	6 ns
单位重量 Unit Weight	0.139332 oz

	IPD50R650CE	IPD50R650CEBTMA1
描述	MOSFET N-Ch 500V 6.1A DPAK-2	MOSFET N-Ch 500V 6.1A DPAK-2
Product Attribute	Attribute Value	Attribute Value
制造商 Manufacturer	Infineon(英飞凌)	Infineon(英飞凌)
产品种类 Product Category	MOSFET	MOSFET
RoHS	Details	Details
技术 Technology	Si	Si
安装风格 Mounting Style	SMD/SMT	SMD/SMT
封装 / 箱体 Package / Case	TO-252-3	TO-252-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds - Drain-Source Breakdown Voltage	500 V	500 V
Id - Continuous Drain Current	9 A	9 A
Rds On - Drain-Source Resistance	590 mOhms	590 mOhms
Vgs th - Gate-Source Threshold Voltage	2.5 V	2.5 V
Vgs - Gate-Source Voltage	20 V	20 V
Qg - Gate Charge	15 nC	15 nC
最小工作温度 Minimum Operating Temperature	- 55 C	- 55 C
最大工作温度 Maximum Operating Temperature	+ 150 C	+ 150 C
Configuration	Single	Single
Pd-功率耗散 Pd - Power Dissipation	69 W	69 W
Channel Mode	Enhancement	Enhancement
高度 Height	2.3 mm	2.3 mm
长度 Length	6.5 mm	6.5 mm
Transistor Type	1 N-Channel	1 N-Channel
宽度 Width	6.22 mm	6.22 mm
Fall Time	13 ns	13 ns
Rise Time	5 ns	5 ns
工厂包装数量 Factory Pack Quantity	2500	2500
Typical Turn-Off Delay Time	27 ns	27 ns
Typical Turn-On Delay Time	6 ns	6 ns
单位重量 Unit Weight	0.139332 oz	0.139332 oz
系列 Packaging	Reel	Reel

器件捷径: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W