Freescale Semiconductor
Technical Data
Document Number: MRF8S9102N
Rev. 0, 2/2011
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 865 to
960 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
750 mA, P
out
= 28 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
920 MHz
940 MHz
960 MHz
G
ps
(dB)
23.1
23.1
22.8
η
D
(%)
36.4
36.4
36.6
Output PAR
(dB)
6.3
6.2
6.1
ACPR
(dBc)
--35.5
--36.1
--35.8
MRF8S9102NR3
865-
-960 MHz, 28 W AVG., 28 V
SINGLE W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFET
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 144 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
), Designed for
Enhanced Ruggedness
•
Typical P
out
@ 1 dB Compression Point
≃
100 Watts CW
880 MHz
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
750 mA, P
out
= 28 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
865 MHz
880 MHz
895 MHz
G
ps
(dB)
22.9
23.0
22.8
η
D
(%)
35.4
35.5
35.6
Output PAR
(dB)
6.4
6.2
6.0
ACPR
(dBc)
--34.7
--35.1
--35.7
CASE 2021-
-03, STYLE 1
OM-
-780-
-2
PLASTIC
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
•
Designed for Digital Predistortion Error Correction Systems
•
Optimized for Doherty Applications
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
©
Freescale Semiconductor, Inc., 2011. All rights reserved.
MRF8S9102NR3
1
RF Device Data
Freescale Semiconductor
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
--0.5, +70
--6.0, +10
32, +0
--65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 28 W CW, 28 Vdc, I
DQ
= 750 mA, 880 MHz
Case Temperature 80°C, 100 W CW, 28 Vdc, I
DQ
= 750 mA, 880 MHz
Symbol
R
θJC
Value
(2,3)
0.63
0.58
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 70 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 400
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 750 mAdc)
Fixture Gate Quiescent Voltage
(4)
(V
DD
= 28 Vdc, I
D
= 750 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1.7 Adc)
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.5
—
4.6
0.1
2.3
3.1
6.2
0.2
3.0
—
7.6
0.3
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. V
GG
= 2 x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
(continued)
MRF8S9102NR3
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 750 mA, P
out
= 28 W Avg., f = 920 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
ACPR
IRL
21.5
34.0
6.0
—
—
23.1
36.4
6.3
--35.5
--14
24.0
—
—
--32.5
--9
dB
%
dB
dBc
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 750 mA, P
out
= 28 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Frequency
920 MHz
940 MHz
960 MHz
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 82 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and
Lower Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 40 MHz Bandwidth @ P
out
= 28 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
G
ps
(dB)
23.1
23.1
22.8
P1dB
IMD
sym
η
D
(%)
36.4
36.4
36.6
—
—
Output PAR
(dB)
6.3
6.2
6.1
100
20
ACPR
(dBc)
--35.5
--36.1
--35.8
—
—
IRL
(dB)
--14
--22
--17
W
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 750 mA, 920--960 MHz Bandwidth
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
80
0.3
0.02
0.004
—
—
—
—
MHz
dB
dB/°C
dB/°C
Typical Broadband Performance — 880 MHz
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 750 mA, P
out
= 28 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Frequency
865 MHz
880 MHz
895 MHz
1. Part internally matched both on input and output.
G
ps
(dB)
22.9
23.0
22.8
η
D
(%)
35.4
35.5
35.6
Output PAR
(dB)
6.4
6.2
6.0
ACPR
(dBc)
--34.7
--35.1
--35.7
IRL
(dB)
--15
--23
--19
MRF8S9102NR3
RF Device Data
Freescale Semiconductor
3
R1
R2
C3
C9
C10
C8
CUT OUT AREA
R3
C12
C2
C4
C5
C14
C15
C16
C11
C6
C7
C13
C1
MRF8S9102N
Rev. 0
Figure 1. MRF8S9102NR3 Test Circuit Component Layout
Table 6. MRF8S9102NR3 Test Circuit Component Designations and Values
Part
C1, C2
C3, C4, C5, C6, C7
C8, C14, C15
C9, C12, C13, C16
C10
C11
R1, R2
R3
PCB
Description
220
μF,
63 V Electrolytic Capacitors
10
μF,
50 V Chip Capacitors
3.0 pF Chip Capacitors
47 pF Chip Capacitors
4.3 pF Chip Capacitor
4.7 pF Chip Capacitor
1 KΩ, 1/8 W Chip Resistors
10
Ω,
1/4 W Chip Resistor
0.020″,
ε
r
= 3.5
Part Number
222212018221
C5750X5R1H106M
ATC100B3R0BT500XT
ATC100B470JT500XT
ATC100B4R3BT500XT
ATC100B4R7BT500XT
WCR08051KFI
9C12063A10R0FKHFT
RO4350
Manufacturer
Vishay
TDK
ATC
ATC
ATC
ATC
Welwyn
Yageo
Rogers
MRF8S9102NR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
V
DD
= 28 Vdc, P
out
= 28 W (Avg.), I
DQ
= 750 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
η
D
, DRAIN
EFFICIENCY (%)
27
26
25
G
ps
, POWER GAIN (dB)
24
23
22
21
20
19
18
17
820
ACPR
IRL
840
860
880
900
920
940
960
η
D
G
ps
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
PARC
40
38
36
34
32
--36
--36.5
ACPR (dBc)
--37
--37.5
--38
--38.5
980
IRL, INPUT RETURN LOSS (dB)
0
--5
--10
--15
--20
--25
--0.5
--0.8
--1.1
--1.4
--1.7
--2
PARC (dB)
f, FREQUENCY (MHz)
Figure 2. Output Peak- -Average Ratio Compression (PARC)
-to-
Broadband Performance @ P
out
= 28 Watts Avg.
--10
--20
--30
--40
--50
--60
V
DD
= 28 Vdc, P
out
= 82 W (PEP), I
DQ
= 750 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
IM3--U
IM3--L
IM5--U
IM5--L
IM7--L
1
10
TWO--TONE SPACING (MHz)
IM7--U
100
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Intermodulation Distortion Products
versus Two-
-Tone Spacing
24
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
23.5
G
ps
, POWER GAIN (dB)
23
22.5
22
21.5
21
2
60
η
D
η
D
,
DRAIN EFFICIENCY (%)
50
40
30
--1 dB = 25 W
--2 dB = 35 W
PARC
10
20
30
40
50
60
G
ps
--3 dB = 48 W
20
10
0
--20
--25
--30
--35
--40
--45
--50
ACPR (dBc)
V
DD
= 28 Vdc, I
DQ
= 750 mA, f = 940 MHz, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal
1 PAR = 7.5 dB @ 0.01% Probability on CCDF
0
--1
--2
--3
--4
ACPR
P
out
, OUTPUT POWER (WATTS)
Figure 4. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
MRF8S9102NR3
RF Device Data
Freescale Semiconductor
5
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