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VS-30CTQ100G-N3

产品描述DIODE RECTIFIER DIODE, Rectifier Diode
产品类别分立半导体    二极管   
文件大小154KB,共7页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 选型对比 全文预览

VS-30CTQ100G-N3概述

DIODE RECTIFIER DIODE, Rectifier Diode

VS-30CTQ100G-N3规格参数

参数名称属性值
包装说明R-PSFM-T3
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性FREE WHEELING DIODE
应用GENERAL PURPOSE
外壳连接CATHODE
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.05 V
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
最大非重复峰值正向电流210 A
元件数量2
相数1
端子数量3
最高工作温度175 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
最大重复峰值反向电压100 V
最大反向电流280 µA
表面贴装NO
技术SCHOTTKY
端子形式THROUGH-HOLE
端子位置SINGLE
Base Number Matches1

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VS-30CTQ...GPbF Series, VS-30CTQ...G-N3 Series
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
Base 2
common
cathode
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
Anode
TO-220AB
Anode
2
1 Common 3
cathode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-220AB
2 x 15 A
80 V, 100 V
0.69 V
7.0 mA at 125 °C
175 °C
Common cathode
7.50 mJ
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
15 A
pk
, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
30
100
650
0.69
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-
30CTQ080GPbF
80
VS-
30CTQ080G-N3
80
VS-
30CTQ100GPbF
100
VS-
30CTQ100G-N3
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
per device
I
F(AV)
per leg
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
50 % duty cycle at T
C
= 129 °C, rectangular waveform
15
A
650
210
7.50
0.50
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
30
UNITS
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
T
J
= 25 °C, I
AS
= 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 26-Aug-11
Document Number: 94194
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

VS-30CTQ100G-N3相似产品对比

VS-30CTQ100G-N3 VS-30CTQ080G-N3
描述 DIODE RECTIFIER DIODE, Rectifier Diode DIODE RECTIFIER DIODE, Rectifier Diode
包装说明 R-PSFM-T3 R-PSFM-T3
Reach Compliance Code unknown unknown
ECCN代码 EAR99 EAR99
其他特性 FREE WHEELING DIODE FREE WHEELING DIODE
应用 GENERAL PURPOSE GENERAL PURPOSE
外壳连接 CATHODE CATHODE
配置 COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
二极管元件材料 SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.05 V 1.05 V
JEDEC-95代码 TO-220AB TO-220AB
JESD-30 代码 R-PSFM-T3 R-PSFM-T3
最大非重复峰值正向电流 210 A 210 A
元件数量 2 2
相数 1 1
端子数量 3 3
最高工作温度 175 °C 175 °C
最低工作温度 -55 °C -55 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT
最大重复峰值反向电压 100 V 80 V
最大反向电流 280 µA 280 µA
表面贴装 NO NO
技术 SCHOTTKY SCHOTTKY
端子形式 THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE

 
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