IRSM808-204MH
Half-Bridge IPM for Small Appliance
Motor Drive Applications
20A, 250V
Description
IRSM808-204MH is a 20A, 250V half-bridge module designed for advanced appliance motor drive applications such as
energy efficient fans and pumps. IR's technology offers an extremely compact, high performance half-bridge topology in
an isolated package. This advanced IPM offers a combination of IR's low R
DS(on)
Trench MOSFET technology and the
industry benchmark half-bridge high voltage, rugged driver in a small PQFN package. At only 8x9mm and featuring
integrated bootstrap functionality, the compact footprint of this surface-mount package makes it suitable for applications
that are space-constrained. IRSM808-204MH functions without a heat sink.
Features
Integrated gate drivers and bootstrap functionality
Suitable for sinusoidal modulation applications
Low 0.15Ω R
DS(on)
(max,
25°C)
Trench MOSFET
Under-voltage lockout for both channels
Matched propagation delay for all channels
Optimized dV/dt for loss and EMI trade offs
3.3V input logic compatible
Active high HIN and active low LIN
Motor Power range 80-200W
Isolation 1500V
RMS
min
ROHS compliant
IRSM808-204MH
Internal Electrical Schematic
VB
IRSM808-204MH
V+
VCC
HIN
Half bridge
driver with built
in bootstrap
Vs
LIN
DT
V-
COM
Ordering Information
Orderable Part Number
IRSM808-204MH
IRSM808-204MHTR
Package Type
PQFN 8x9mm
PQFN 8x9mm
Form
Tray
Tape and Reel
Quantity
1300
2000
1
www.irf.com
© 2015 International Rectifier
February 12, 2015
IRSM808-204MH
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are
not tested at manufacturing. All voltage parameters are absolute voltages referenced to V
SS
unless otherwise
stated in the table. The thermal resistance rating is measured under board mounted and still air conditions.
Symbol
BV
DSS
I
O
P
d
T
J
(MOSFET & IC)
T
L
T
S
V
B
V
S
V
CC
V
IN
V
ISO
Description
MOSFET Blocking Voltage
Output DC Current per MOSFET @ T
C
=25°C (Note1)
Power dissipation per MOSFET @ T
C
=100°C (Note1)
Maximum Operating Junction Temperature
Lead temperature (soldering 30 seconds)
Storage Temperature Range
High side floating supply voltage
High side floating supply offset voltage
Low Side fixed supply voltage
Logic input voltage LIN, HIN
Isolation voltage (1min) (Note2)
Min
---
---
---
---
---
-40
-0.3
VB - 20
-0.3
-0.3
---
Max
250
20
38
150
260
150
VS + 20
VB +0.3
20
VCC+0.3
1500
Unit
V
A
W
°C
°C
°C
V
V
V
V
V
RMS
Note1: Calculated based on maximum junction temperature. Bond wires current limit is 8A.
Note2: Characterized, not tested at manufacturing
Reccomended Operating Conditions
Symbol
V
+
Description
Positive DC Bus Input Voltage
High Side Floating Supply Offset
Voltage
High Side Floating Supply Voltage
Low Side and Logic Supply Voltage
Logic Input Voltage
PWM Carrier Frequency
Min
---
(Note
3)
V
S
+12
13.5
COM
---
Typ
---
---
---
---
---
---
Max
200
200
V
S
+20
16.5
V
CC
20
Units
V
V
V
V
V
kHz
Conditions
V
S1,2,3
V
B1,2,3
V
CC
V
IN
F
p
For proper operation the module should be used within the recommended conditions. All voltages are absolute referenced to COM. The V
S
offset is tested with all supplies biased at 15V differential.
Note 3: Logic operational for V
s
from COM-8V to COM+250V. Logic state held for V
s
from COM-8V to COM-V
BS
.
2
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© 2015 International Rectifier
February 12, 2015
IRSM808-204MH
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
)=15V, T
J
=25ºC, unless otherwise specified. The V
IN
, and I
IN
parameters are referenced to COM
Symbol
BV
DSS
I
LKH
I
LKL
Description
Drain-to-Source Breakdown Voltage
Leakage Current of High Side FET’s
in Parallel
Leakage Current of Low Side FET’s
in Parallel Plus Gate Drive IC
Drain to Source ON Resistance
---
V
SD
V
HIN/LIN
V
HIN/LIN
V
CCUV+,
V
BSUV+
V
CCUV-,
V
BSUV-
V
CCUVH,
V
BSUVH
I
QBS
I
QCC
I
HIN+
I
LIN-
R
BR
Diode Forward Voltage
Logic “1” input voltage for HIN & “0”
for LIN
Logic “0” input voltage for HIN & “1”
for LIN
V
CC
and V
BS
Supply Under-Voltage,
Positive Going Threshold
V
CC
and V
BS
supply Under-Voltage,
Negative Going Threshold
V
CC
and V
BS
Supply Under-Voltage
Lock-Out Hysteresis
Quiescent V
BS
Supply Current
V
IN
=0V
Quiescent V
CC
Supply Current
V
IN
=0V
Input Bias Current V
IN
=4V
Input Bias Current V
IN
=0V
Internal Bootstrap Equivalent
Resistor Value
---
2.2
---
8
7.4
---
---
---
---
---
---
0.35
0.85
---
---
8.9
8.2
0.7
45
1100
5
1
200
---
---
---
0.8
9.8
9.0
---
70
3000
20
2
---
V
V
V
V
V
V
µA
µA
µA
µA
Ω
T
J
=25°C
Min
250
---
---
---
R
DS(ON)
Typ
---
15
20
0.13
Max
---
---
---
0.15
Ω
Units
V
µA
µA
Conditions
T
J
=25°C, I
LK
=250µA
T
J
=25°C, V
DS
=250V
T
J
=25°C, V
DS
=250V
T
J
=25°C, V
CC
=10V, Id=6A
T
J
=150°C, V
CC
=10V, Id=6A
(Note 4)
T
J
=25°C, V
CC
=10V, Id=6A
Note 4: Characterized, not tested at manufacturing
MOSFET Avalanche Characteristics
Symbol
EAS
Description
Single Pulse Avalanche Energy
Min
---
Typ
430
Max
---
Units
mJ
Conditions
T
J
=25°C, L=3mH,
VDD=150V, IAS=10A, TO-
220 package.
3
www.irf.com
© 2015 International Rectifier
February 12, 2015
IRSM808-204MH
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
)=15V, TJ=25ºC, unless otherwise specified. Driver only timing unless otherwise specified.
Symbol
T
ON
T
OFF
DT
T
FIL,IN
Description
Input to Output Propagation Turn-
On Delay Time
Input to Output Propagation Turn-
Off Delay Time
Built-in Deadtime
Input Filter Time (HIN, LIN)
Min
---
---
0.9
---
Typ
0.8
0.8
1.3
300
Max
1.3
1.3
---
---
Units
µs
µs
µs
ns
Conditions
I
D
=1mA, V =50V
Gate Driver; V
LIN
=0 &
V
HIN
=5V with no external
deadtime
+
Thermal and Mechanical Characteristics
Symbol
R
th(J-B)
Description
Thermal resistance, junction to
mounting pad, each MOSFET
Min
---
Typ
1.3
Max
---
Units
°C/W
Conditions
Input-Output Logic Level Table
V+
HIN
Gate
Driver
IC
LIN
Ho
U/V/W
Lo
HIN
HI
LO
HI
LO
LIN
HI
LO
LO
HI
U,V,W
V+
0
**
*
* V+ if motor current is flowing into VS, 0 if current is flowing out of VS into the motor winding
** Shoot-through condition
4
www.irf.com
© 2015 International Rectifier
February 12, 2015
IRSM808-204MH
Qualification Information†
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
RoHS Compliant
†
††
†††
Class 1C (per JESD22-A114)
Yes
Industrial
MSL3
†††
††
(per JEDEC JESD47)
(per IPC/JEDEC J-STD-020)
Class B (per JESD22-A115)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/
Higher qualification ratings may be available should the user have such requirements. Please contact
your International Rectifier sales representative for further information.
Higher MSL ratings may be available for the specific package types listed here. Please contact your
International Rectifier sales representative for further information.
Module Pin-Out Description
Pin
1, 4, 7, 32
2
3
5
6
8, 9, 10
11 – 19
20 – 28
29 – 30
31
Name
COM
VCC
HIN
LIN
DT
V-
VS
V+
VS
VB
Description
Low Side Gate Drive Return
15V Gate Drive Supply
Logic Input for High Side (Active High)
Logic Input for Low Side (Active Low)
Dead time
Low Side Source Connection
Phase Output
DC Bus
Phase Output (-ve Bootstrap Cap Connection)
High Side Floating Supply (+ve Bootstrap Cap Connection)
7
8
9
32
10
29
6
5
4
3
2
1
31
30
11
12
28
27
26
13
14
15
25
24
16
23
17
18
19
20
21
22
Exposed pad (Pin 32) has to be connected to COM for better electrical performance
5
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© 2015 International Rectifier
February 12, 2015
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