VS-ETX1506-M3, VS-ETX1506FP-M3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 15 A FRED Pt
®
FEATURES
• Hyperfast recovery time, extremely low Q
rr
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
2L TO-220AC
Base
cathode
2
2L TO-220 FULL-PAK
• Fully isolated package (V
INS
= 2500 V
RMS
)
• True 2 pin package
• Designed and qualified according to
JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
1
Cathode
3
Anode
1
Cathode
2
Anode
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
VS-ETX1506-M3
VS-ETX1506FP-M3
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Diode variation
2L TO-220AC, 2L TO-220FP
15 A
600 V
1.55 V
18 ns
175 °C
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current in DC
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
FULL-PAK
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 141 °C
T
C
= 71 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
600
15
120
-65 to +175
°C
UNITS
V
A
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 15 A
I
F
= 15 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
2.5
1.55
0.02
40
12
8
MAX.
-
3.4
2
36
250
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Revision: 15-Jun-15
Document Number: 93549
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETX1506-M3, VS-ETX1506FP-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 15 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
t
rr
I
RRM
Q
rr
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 800 A/μs
V
R
= 390 V
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
17
18
20
45
2.7
5.5
26
130
32
17
290
MAX.
23
30
-
-
-
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
Reverse recovery time
Peak recovery current
Reverse recovery charge
nC
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style 2L TO-220AC
Case style 2L TO-220 FULL-PAK
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and greased
TEST CONDITIONS
MIN.
-65
-
-
-
-
-
-
6
(5)
TYP.
-
1.2
3.7
-
0.5
2
0.07
-
MAX.
175
1.4
4.3
70
-
-
-
12
(10)
ETX1506
ETX1506FP
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
FULL-PAK
Revision: 15-Jun-15
Document Number: 93549
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETX1506-M3, VS-ETX1506FP-M3
www.vishay.com
Vishay Semiconductors
1000
175°
C
100
100
Reverse Current - I
R
(µA)
150°
C
10
1
75°
C
0.1
0.01
0.001
100
200
300
400
500
600
50°
C
25°
C
125°
C
100°
C
Tj = 175°
C
Instantaneous Forward Current - I
F
(A)
Reverse Voltage - V
R
(V)
10
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
Tj = 150°
C
Junction Capacitance - C
T
(pF)
Tj = 25°
C
10
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1
0
100
200
300
400
500
600
Forward Voltage Drop - V
F
(V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
Thermal Impedance Z
thJC
(°C/W)
D = 0.5
1
D = 0.2
D = 0.1
D = 0.05
0.1
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 15-Jun-15
Document Number: 93549
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETX1506-M3, VS-ETX1506FP-M3
www.vishay.com
10
Vishay Semiconductors
Thermal Impedance Z
thJC
(°C/W)
D = 0.5
D = 0.2
1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
0.1
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 5 - Maximum Thermal Impedance Z
thJC
Characteristics (FULL-PAK)
180
Allowable Case Temperature (°C)
180
Allowable Case Temperature (°C)
175
170
165
160
155
150
145
140
135
0
2
4
6
8 10 12 14 16
Average Forward Current - I
F
(AV)
(A)
DC
160
140
120
100
80
60
0
2
4
6
8 10 12 14 16
Average Forward Current - I
F
(AV)
(A)
DC
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
40
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
Average Power Loss ( Watts )
35
30
25
20
15
10
5
0
0
RMS Limit
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
2 4 6 8 10 12 14 16 18 20 22
Average Forward Current - I
F
(AV)
(A)
Fig. 8 - Forward Power Loss Characteristics
Revision: 15-Jun-15
Document Number: 93549
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETX1506-M3, VS-ETX1506FP-M3
www.vishay.com
55
50
45
40
If = 15 A, 125°
C
250
350
Vishay Semiconductors
300
trr ( ns )
35
30
25
If = 15 A, 25°
C
20
15
10
100
1000
Qrr ( nC )
200
If = 15 A, 125°
C
150
100
50
If = 15 A, 25°
C
typical value
typical value
0
100
1000
di
F
/dt (A/µs )
Fig. 9 - Typical Reverse Recovery vs. dI
F
/dt
V
R
= 200 V
di
F
/dt (A/µs )
Fig. 10 - Typical Stored Charge vs. dI
F
/dt
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 11 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 12 - Reverse Recovery Waveform and Definitions
Revision: 15-Jun-15
Document Number: 93549
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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