Revision. 007
PGA26E19BA
Product Standards
PGA26E19BA
Established:
Revised:
2014-09-25
2017-01-24
Page 1 of 11
Revision. 007
PGA26E19BA
Type
Application
Structure
Equivalent Circuit
Out Line
GaN-Tr
For power switching
N-channel enhancement mode FET
Figure 1
DFN 8X8
Marking
PGA26E19
A. ABSOLUTE MAXIMUM RATINGS ( Tj = 25
O
C , unless otherwise specified )
Values
No.
Item
Symbol
Min.
Typ.
Max.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Drain-source voltage ( DC ) *1
Drain-source voltage ( pulse ) *2
Gate-source voltage ( DC ) *1
Gate current ( DC ) *1
Gate current ( pulse ) *3,4
Electric gate charge ( pulse )
Drain current ( DC )
( Tc = 25
O
C ) *1
Drain reverse current ( DC )
( Tc = 25
O
C ) *1
Drain current ( pulse )*5
( Tc = 25
O
C )*1
Drain reverse current ( pulse )*5
( Tc = 25
O
C )*1
Power dissipation ( Tc = 25
O
C )
Junction temperature
Storage temperature
Drain-source voltage slope
VDSS
VDSP
VGSS
IG
IGP
QGP
ID
IDR
ID pulse
IDR pulse
PD
Tj
Tstg
dv/dt
-
-
-10
-
-
-
-
-
-
-
-
-
-55
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
600
750
-
19
0.6
12
13
13
23
23
66
150
150
200
Unit
V
V
V
mA
A
nC
A
A
A
A
W
O
Note
*VGSS+ is given by IG ratings
*See application note
*See application note
*See application note
*f＝200kH½
*See application note
Figure 4
Figure 4
Figure 2
C
C
O
V/ns
[Special instructions]
*1 : Please use this product to meet a condition of Tj within 150
O
C.
*2 : Spike duty cycle D < 0.1, spike duration < 1us, total spike time < 1hour.
*3 : IGP is defined as (Vcc - Vplateau) / Rgon, as shown in Figure A.
Vplateau is the voltage between Gate and Source1.
*4 : Please use this product to meet both a maximum gate current and a maximum gate pulse charge
of IGP(0.6A) and Q(12nC) respectively, as shown in Figure H.
*5 : Pulse width limited by Tjmax.
Established:
Revised:
2014-09-25
2017-01-24
Page 2 of 11
Revision. 007
PGA26E19BA
B. ELECTRICAL CHARACTERISTICS
No.
Item
( Tj = 25
O
C , unless otherwise specified )
Symbol
Measurement Condition
VDS=600 V, VGS=0 V, Tj=25
o
C
Min.
-
-
-1
2.8
0.9
-
-
-
-
-
Typ.
-
39
-
3.5
1.2
140
290
0.8
15
160
28
0.2
3.4
5.2
3.4
2.4
33
37
Max.
39
-
-
4.2
1.6
190
-
-
-
-
-
-
-
-
-
-
-
-
Unit
μA
μA
μA
V
V
mΩ
mΩ
Ω
S
pF
pF
pF
ns
ns
ns
ns
pF
pF
1
Drain cut-off current
IDSS
VDS=600 V, VGS=0 V, Tj=150
o
C
2
3
4
Gate-source leakage current
Gate forward voltage
Gate threshold voltage
IGSS
VGSF
VTH
VGS=-3 V
VDS=0 V
IGS=10 mA
open drain
VDS=10 V
IDS=1 mA
IGS=10 mA, IDS=5 A, Tj=25
o
C
5
Drain-source on-state resistance
RDS(on)
IGS=10 mA, IDS=5 A, Tj=150
o
C
6
7
8
9
10
11
12
13
14
15
16
Gate resistance
Transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Effective output capacitance
( energy related )
Effective output capacitance
( time related )
RG
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Co(er)
f=100MHz
open drain
VDS=8 V
IDS=5 A
VDS=400 V
VGS=0 V
f=1 MHz
-
-
-
VDD=400 V
IDS=5 A
(Figure A, Figure B)
Vcc=12 V
Rgon=15 Ω, Rgoff=4.7 Ω,
Rig=1500 Ω, Cs=680 pF
-
-
-
-
VDS=0-480 V
Co(tr)
-
Established:
Revised:
2014-09-25
2017-01-24
Page 3 of 11
Revision. 007
PGA26E19BA
C. GATE CHARGE CHARACTERISTICS ( Tj = 25
O
C, unless otherwise specified )
No.
Item
Symbol
Measurement Condition
1
2
3
4
Gate charge
Gate-source charge
Gate-drain charge
Gate plateau voltage
Qg
Qgs
Qgd
V plateau
VDD=400 V
IDS=5 A
VDD=400 V
IDS=5 A
(Figure C, Figure D)
Min.
-
-
-
-
Typ.
2.0
0.3
1.0
1.8
Max.
-
-
-
-
Unit
nC
nC
nC
V
D. REVERSE CONDUCTING CHARACTERISTICS ( Tj = 25
O
C, unless otherwise specified )
No.
Item
Symbol
Measurement Condition
Min.
1
2
3
4
5
Source-drain forward voltage
Reverse recovery charge
Reverse recovery time
Peak reverse recovery current
Output charge
VSD
Qrr
trr
Irrm
Qoss
VGS=0 V
ISD=5 A
Typ.
2.6
0
0
0
17
Max.
-
-
-
-
-
Unit
V
nC
ns
A
nC
-
-
-
-
-
VDS=400 V
ISD=5 A
E. THERMAL RESISTANCE CHARACTERISTICS
No.
Item
Symbol
1
2
3
Thermal resistance
( junction to case )
Thermal resistance
( junction to ambient ) *1
Reflow soldering temperature
Rth(j-c)
Rth(j-a)
Tsold
Measurement Condition
Min.
-
-
Typ.
-
-
-
Max.
1.9
46
260
Unit
o
C/W
C/W
o
o
reflow MSL3
-
C
[Notes]
2
*1 : Device mounted on four layers epoxy PCB (6.45 cm copper area and 70
m
thickness).
Established:
Revised:
2014-09-25
2017-01-24
Page 4 of 11
Revision. 007
PGA26E19BA
■Equivalent
circuit / Electrical characteristics
1 2 34
Drain
9
8 7 6 5
Gate
Source1
Source2
Notice：
Please connect Source1 pin to
gate driver.
Top View
1,2.3,4
5,6,9
7
8
Bottom View
：Drain
：Source2
：Source1
：Gate
【Figure
1: Pin
½ayout
/ Equivalent circuit】
100
10
80
D = 50%
60
40
Rth(j-c) [
o
C/W]
1
D = 20%
Power [W]
D = 10%
D = 2%
0.1
Single pulse
20
0
0
50
100
150
Temperature Tc [
o
C]
0.01
-6
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
【Figure
2: Max. power dissipation】
Time [s]
【Figure
3 : Transient thermal impedance】
【Figure
3: Transient thermal impedance】
100
Drain-source current IDS [A]
ID MAX(pulse)
10
10μs*
1
ID MAX(DC)
100us*
1ms*
DC
0.1
* Single pulse
0.01
0.1
1
10
100
1000
Drain-source voltage VDS [V]
【Figure
4: Safe operating area Tc = 25
O
C】
Established:
Revised:
2014-09-25
2017-01-24
Page 5 of 11
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