VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series
www.vishay.com
Vishay Semiconductors
Power Silicon Rectifier Diodes,
(Stud Version), 35 A, 40 A, 60 A
FEATURES
• Low leakage current series
• Good surge current capability up to 1000 A
• Material categorization: for definitions of
compliance please see
www.vishay.com/doc?99912
DO-5 (DO-203AB)
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit configuration
35 A, 40 A, 60 A
DO-5 (DO-203AB)
Single
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
FSM
I
2
t
I
2
t
V
RRM
T
J
Note
(1)
JEDEC
®
registered values
Range
TEST CONDITIONS
T
C
50 Hz
60 Hz
50 Hz
60 Hz
1N1183
35
(1)
140
(1)
480
500
(1)
1140
1040
16 100
50 to 600
(1)
-65 to +200
1N3765
35
(1)
140
(1)
380
400
(1)
730
670
10 300
700 to 1000
(1)
-65 to +200
1N1183A
40
(1)
150
(1)
765
800
(1)
2900
2650
41 000
50 to 600
(1)
-65 to +200
1N2128A
60
(1)
140
(1)
860
900
(1)
3700
3400
52 500
50 to 600
(1)
-65 to +200
UNITS
A
°C
A
A
2
s
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-1N1183
VS-1N1184
VS-1N1185
VS-1N1186
VS-1N1187
VS-1N1188
VS-1N1189
VS-1N1190
VS-1N3765
VS-1N3766
VS-1N3767
VS-1N3768
VS-1N1183A
VS-1N1184A
VS-1N1185A
VS-1N1186A
VS-1N1187A
VS-1N1188A
VS-1N1189A
VS-1N1190A
VS-1N2128A
VS-1N2129A
VS-1N2130A
VS-1N2131A
VS-1N2133A
VS-1N2135A
VS-1N2137A
VS-1N2138A
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
(T
J
= -65 °C to +200 °C
(2)
)
V
50
(1)
100
(1)
150
(1)
200
(1)
300
(1)
400
(1)
500
(1)
600
(1)
700
(1)
800
(1)
900
(1)
1000
(1)
V
RM
, MAXIMUM DIRECT
REVERSE VOLTAGE
(T
J
= -65 °C to +200 °C
(2)
)
V
50
(1)
100
(1)
150
(1)
200
(1)
300
(1)
400
(1)
500
(1)
600
(1)
700
(1)
800
(1)
900
(1)
1000
(1)
Notes
• Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g., 1N1188R, 1N3766R, 1N1186RA, 1N2135RA
(1)
JEDEC
®
registered values
(2)
For 1N1183 Series and 1N3765 Series T = -65 °C to +190 °C
C
Revision: 10-Jan-18
Document Number: 93492
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series
www.vishay.com
Vishay Semiconductors
TEST CONDITIONS
1-phase operation,
180° sinusoidal conduction
Half cycle 50 Hz
sine wave or 6 ms
rectangular pulse
Half cycle 60 Hz
sine wave or 5 ms
rectangular pulse
Half cycle 50 Hz
sine wave or 6 ms
rectangular pulse
Half cycle 60 Hz
sine wave or 5 ms
rectangular pulse
t = 10 ms
Following any
rated load
condition and
with rated
V
RRM
applied
Following any
rated load
condition and
with ½ V
RRM
applied following
surge = 0
With rated V
RRM
applied following
surge, initial
T
J
= T
J
maximum
With V
RRM
= 0
following surge,
initial
T
J
= T
J
maximum
1N1183
35
(1)
140
(1)
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
SYMBOL
I
F(AV)
1N3765 1N1183A 1N2128A UNITS
35
(1)
140
(1)
40
(1)
150
(1)
60
(1)
140
(1)
A
°C
480
380
765
860
500
(1)
400
(1)
800
(1)
900
(1)
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
570
455
910
1000
595
1140
1040
1610
1470
16 100
1.7
(1)
110
-
-
-
-
10
(1)
475
730
670
1030
940
10 300
1.8
(1)
110
5.0
3.0
2.0
-
(1)
950
2900
2650
4150
3750
41 500
1.3
(1)
126
-
-
-
-
2.5
(1)
1050
3700
3400
5250
4750
52 500
1.3
(1)
188
-
-
-
-
10
(1)
mA
A
2
s
V
A
A
2
s
Maximum
I
2
t
for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
I
2
t
(2)
V
FM
Maximum I
2
t for individual
device fusing
Maximum I
2
t
for individual
device fusing
Maximum peak forward voltage
at maximum forward current (I
FM
)
V
RRM
= 700
Maximum average
reverse current
V
RRM
= 800
V
RRM
= 900
V
RRM
= 1000
I
R(AV)
t = 0.1 to 10 ms,
V
RRM
= 0 following surge
T
J
= 25 °C
Maximum rated I
F(AV)
and T
C
4.0
(1)
(1)
(1)
Maximum rated I
F(AV)
, V
RRM
and T
C
Notes
(1)
JEDEC
®
registered values
(2)
I
2
t for time t = I
2
t
x
t
x
x
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating
case temperature range
Maximum storage
temperature range
Maximum internal thermal
resistance, junction to case
Thermal resistance,
case to sink
Maximum allowable
mounting torque
(+ 0 %, - 10 %)
SYMBOL
T
C
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not lubricated thread, tighting on nut
(2)
Lubricated thread, tighting on nut
(2)
TEST CONDITIONS
1N1183 1N3765 1N1183A 1N2128A UNITS
-65 to +190
(1)
-65 to +175
1.00
(1)
(1)
-65 to +200
°C
-65 to +200
1.1
(1)
0.25
3.4 (30)
2.3 (20)
4.2 (37)
3.2 (28)
17
0.6
g
oz.
N·m
(lbf · in)
0.65
(1)
°C/W
Not lubricated thread, tighting on hexagon
(3)
Lubricated thread, tighting on hexagon
(3)
Approximate weight
Case style
JEDEC
®
DO-5 (DO-203AB)
Notes
(1)
JEDEC registered values
®
(2)
Recommended for pass-through holes
(3)
Recommended for holed threaded heatsinks
Revision: 10-Jan-18
Document Number: 93492
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series
www.vishay.com
Vishay Semiconductors
I
F
- Instantaneous Forward Current (A)
10
3
T
J
= 190 °C
10
2
Typical
Maximum Allowable Case Temperature (°C)
190
180
Ø
170
160
150
140
+60 °C +120 °C
130
120
110
100
0
10
Conduction Period
DC
+180 °C
10
1
T
J
= 25 °C
20
30
40
50
60
1
0
1
2
3
4
5
6
Average Forward Current Over Full Cycle (A)
Fig. 1 - Maximum Allowable Case Temperature vs.
Average Forward Current, 1N1183 and 1N3765 Series
I
F
- Instantaneous Forward Voltage (V)
Fig. 4 - Typical Forward Voltage vs. Forward Current,
1N1183 and 1N3765 Series
70
1.0
T
J
= 190 °C
Average Forward Power Loss
Over Full Cycle (W)
60
50
Peak Half Sine Wave
Forward Current (Per Unit)
+60 °C +120 °C
0.9
0.8
0.7
0.6
+180 °C
40
DC
30
20
10
0
0
10
20
30
40
50
Ø
At any rated load condition and with
rated V
RRM
applied following surge
Series
Per Unit Base-A
1N1183
500
1N3765
400
50 Hz
0.5
0.4
0.3
1
2
4
6 8 10
60 Hz
Conduction Period
20
40 60
Average Forward Current Over Full Cycle (A)
Fig. 2 - Typical Low Level Forward Power Loss vs.
Average Forward Current (Sinusoidal Current Waveform),
1N1183 and 1N3765 Series
10
5
Number of Equal Amplitude
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N1183 and 1N3765 Series
100
T
J
= 140 °C
+180 °C
+120 °C
+60 °C
Average Forward Current
Over Full Cycle (A)
Average Forward Current
Over Full Cycle (A)
DC
10
4
90
80
70
60
50
40
30
20
10
10
4
+60 °C
&
Wave
+180 °C
Wave
+120 °C
&
Wave
DC
+180 °C
Wave
10
3
10
2
Ø
+Conduction Period
10
10
10
2
Conduction Period
10
3
0
110 120 130 140 150 160 170 180 190 200
Average Forward Power Loss
Over Full Cycle (W)
Fig. 3 - Typical High Level Forward Power Loss vs.
Average Forward Current (Sinusoidal Current Waveform),
1N1183 and 1N3765 Series
Maximum Allowable CaseTemperature (°C)
Fig. 6 - Average Forward Current vs. Maximum Allowable Case
Temperature, 1N1183A Series
Revision: 10-Jan-18
Document Number: 93492
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series
www.vishay.com
100
Vishay Semiconductors
1.0
Average Forward Power Loss
Over Full Cycle (W)
90
80
70
60
50
40
30
20
10
0
0
Maximum Peak Half Sine Wave
Forward Current (Per Unit)
+180 °C
+180 °C
+120 °C
+60 °C
Wave
Wave
&
&
Wave
Wave
DC
0.9
0.8
0.7
0.6
At any rated load condition and with
rated V
RRM
applied following surge
Series
Per Unit Base-A
1N1183A
800
T
J
= 200 °C
60 Hz
0.5
50 Hz
0.4
0.3
+Conduction Period
10
20
30
40
50
60
70
1
2
4
6 8 10
20
40 60
Average Forward Current Over Full Cycle (A)
Fig. 7 - Maximum Low Level Forward Power Loss vs.
Average Forward Current, 1N1183A Series
Number of Equal Amplitude
Current Pulses (N)
Fig. 10 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N1183A Series
10
4
1.0
Average Forward Power Loss
Over Full Cycle (W)
Maximum Peak Half Sine Wave
Forward Current (Per Unit)
+180 °C
+180 °C
+120 °C
10
3
Wave
Wave
&
&
Wave
Wave
DC
0.9
0.8
0.7
0.6
At any rated load condition and with
rated V
RRM
applied following surge
Series
Per Unit Base-A
1N2128A
900
+60 °C
10
2
60 Hz
0.5
0.4
0.3
50 Hz
T
J
= 200 °C
+Conduction Period
10
1
10
10
2
10
3
1
2
4
6 8 10
20
40 60
Average Forward Current Over Full Cycle (A)
Fig. 8 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 1N1183A Series
10
4
10
3
Number of Equal Amplitude
Current Pulses (N)
Fig. 11 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N2128A Series
Maximum Allowable Case Temperature (°C)
200
180
160
140
120
100
+Conduction Period
Instantaneous Forward Current (A)
+60 °C
&
+120 °C
&
+180 °C
+180 °C
Wave
Wave
Wave
Wave
10
2
T
J
= 25 °C
10
T
J
= 200 °C
DC
1
80
60
0
10
20
30
40
50
60
70
80
90 100
10
-1
0
0.5
1
1.5
2
2.5
3
3.5
Instantaneous Forward Voltage (V)
Fig. 9 - Maximum Forward Voltage vs. Forward Current,
1N1183A Series
Average Forward Current Over Full Cycle (A)
Fig. 12 - Maximum Allowable Case Temperature vs.
Average Forward Current, 1N2128A Series
Revision: 10-Jan-18
Document Number: 93492
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series
www.vishay.com
70
Vishay Semiconductors
10
3
+60 °C
Average Forward Power Loss
Over Full Cycle (W)
60
50
40
30
20
10
0
0
T
J
= 140 °C
+60 °C
&
+120 °C
&
+180 °C
+180 °C
Wave
Wave
Wave
Wave
Average Forward Power Loss
Over Full Cycle (W)
&
+90 °C
&
+180 °C
+180 °C
Wave
Wave
Wave
Wave
10
5
T
J
= 140 °C
+Conduction
Period
10
2
DC
DC
+180 °C
+180 °C
+120 °C
&
+60 °C
&
Wave
Wave
Wave
Wave
10
4
+Conduction Period
DC
10
10
20
30
40
50
10
10
2
10
3
10
4
10
3
Average Forward Current Over Full Cycle (A)
Fig. 13 - Maximum Low Level Forward Power Loss vs.
Average Forward Current, 1N2128A Series
10
4
Average Forward Current Over Full Cycle (A)
Fig. 14 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 1N2128A Series
Instantaneous Forward Current (A)
10
3
10
2
10
1
T
J
= 140 °C
T
T
J
= 25
°C
°C
J
=
1.0
0
1
2
3
4
5
6
7
Instantaneous Forward Voltage (V)
Fig. 15 - Maximum Forward Voltage vs. Forward Current,
1N2128A Series
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95360
Revision: 10-Jan-18
Document Number: 93492
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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