NL17SG14
Schmitt Inverter
The NL17SG14 MiniGatet is an advanced high−speed CMOS
Schmitt Inverter in ultra−small footprint.
The NL17SG14 input structure provides protection when voltages
up to 4.6 V are applied.
Features
www.onsemi.com
MARKING
DIAGRAMS
SOT−953
CASE 527AE
1
UDFN6
1.0 x 1.0
CASE 517BX
UDFN6
1.45 x 1.0
CASE 517AQ
2M
•
•
•
•
•
•
Wide Operating V
CC
Range: 0.9 V to 3.6 V
High Speed: t
PD
= 3.7 ns (Typ) at V
CC
= 3.0 V, C
L
= 15 pF
Low Power Dissipation: I
CC
= 0.5
mA
(Max) at T
A
= 25°C
4.6 V Overvoltage Tolerant (OVT) Input Pins
Ultra−Small Packages
IN A
1
5
V
CC
NC
1
5
V
CC
GND
2
IN A
2
M
G
SC−88A
DF SUFFIX
CASE 419A
NC
3
4
OUT Y GND
3
4 OUT Y
= Date Code*
= Pb−Free Package
Figure 1. SOT−953
(Top Thru View)
Figure 2. SC−88A
(Top View)
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
NC
1
6
V
CC
PIN ASSIGNMENT
SOT−953
SC−88A
NC
IN A
GND
OUT Y
V
CC
UDFN6
NC
IN A
GND
OUT Y
NC
V
CC
IN A
2
5
NC
1
2
IN A
GND
NC
OUT Y
V
CC
GND
3
4
OUT Y
3
4
5
6
Figure 3. UDFN
(Top View)
FUNCTION TABLE
IN A
OUT Y
A Input
L
H
Y Output
H
L
Figure 4. Logic Symbol
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2015
1
July, 2015 − Rev. 7
Publication Order Number:
NL17SG14/D
4
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
R
M
M
M
AR M
G
G
NL17SG14
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
I
GND
T
STG
T
L
T
J
MSL
F
R
V
ESD
I
LATCHUP
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Source/Sink Current
DC Supply Current per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage
Latchup Performance
Oxygen Index: 28 to 34
Human Body Model (Note 2)
Machine Model (Note 3)
Above V
CC
and Below GND at 125°C (Note 4)
Output at High or Low State
Power−Down Mode (V
CC
= 0 V)
V
IN
< GND
V
OUT
< GND
Parameter
Value
−0.5 to +5.5
−0.5 to +4.6
−0.5 to V
CC
+ 0.5
−0.5 to +4.6
−20
−20
±20
±20
±20
−65 to +150
260
+150
Level 1
UL 94 V−0 @ 0.125 in
>2000
>100
±100
V
mA
Unit
V
V
V
mA
mA
mA
mA
mA
°C
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
OUT
T
A
Dt
/
DV
Positive DC Supply Voltage
Digital Input Voltage
Output Voltage
Operating Temperature Range
Input Transition Rise or Fail Rate
Output at High or Low State
Power−Down Mode (V
CC
= 0 V)
Characteristics
Min
0.9
0.0
0.0
0.0
−55
0
Max
3.6
3.6
V
CC
3.6
+125
No Limit
Unit
V
V
V
°C
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
www.onsemi.com
2
NL17SG14
DC ELECTRICAL CHARACTERISTICS
V
CC
(V)
0.9
1.1
1.4
1.65
2.3
3.0
V
T−
Negative−
Going Input
Threshold
Voltage
0.9
1.1
1.4
1.65
2.3
3.0
V
H
Hysteresis
Voltage
0.9
1.1
1.4
1.65
2.3
3.0
V
OH
High−Level
Output Voltage
V
IN
=
V
IH
or
V
IL
I
OH
= −20
mA
I
OH
= −0.3 mA
I
OH
= −1.7 mA
I
OH
= −3.0 mA
I
OH
= −4.0 mA
I
OH
= −8.0 mA
V
OL
Low−Level
Output Voltage
V
IN
=
V
IH
or
V
IL
I
OL
= 20
mA
I
OL
= 0.3 mA
I
OL
= 1.7 mA
I
OL
= 3.0 mA
I
OL
= 4.0 mA
I
OL
= 8.0 mA
I
IN
I
CC
Input Leakage
Current
Quiescent
Supply Current
0
≤
V
IN
≤
3.6 V
V
IN
= V
CC
or GND
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to
1.95
2.3 to 2.7
3.0 to 3.6
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to
1.95
2.3 to 2.7
3.0 to 3.6
0 to 3.6
3.6
T
A
= 255C
Min
0.64
0.73
0.86
0.95
1.22
1.51
0.09
0.15
0.3
0.35
0.55
0.95
0.15
0.15
0.15
0.15
0.15
0.25
0.75
0.75 x
V
CC
0.75 x
V
CC
V
CC
−
0.45
2.0
2.48
0.1
0.25 x
V
CC
0.25xV
CC
−555C
3
T
A
3
1255C
Max
0.86
0.95
1.16
1.25
1.6
2.05
0.30
0.39
0.54
0.65
0.88
1.16
0.75
0.75
0.75
0.75
0.75
0.85
Min
0.62
0.71
0.84
0.94
1.18
1.38
0.08
0.12
0.25
0.3
0.5
0.9
0.2
0.2
0.2
0.2
0.2
0.3
0.75
0.75 x
V
CC
0.75 x
V
CC
V
CC
−
0.45
2.0
2.48
0.1
0.25 x
V
CC
0.25 x
V
CC
0.45
0.4
0.4
±1.0
10.0
mA
mA
V
Max
0.87
1
1.2
V
1.3
1.65
2.1
0.33
0.43
0.55
0.65
0.88
1.16
0.8
0.8
0.8
0.8
0.8
0.9
V
V
V
Unit
Symbol
V
T+
Parameter
Positive−Going
Input Threshold
Voltage
Condition
Typ
0.7
0.81
0.94
1.06
1.36
1.8
0.23
0.33
0.47
0.6
0.85
1.13
0.5
0.5
0.5
0.5
0.5
0.65
0.45
0.4
0.4
±0.1
0.5
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
NL17SG14
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3.0 ns)
T
A
= 25
5C
Typ
T
A
=
−555C to +1255C
Min
−
1.0
1.0
1.0
1.0
1.0
−
1.0
1.0
1.0
1.0
1.0
−
1.0
1.0
1.0
1.0
1.0
−
−
−
Max
−
35.9
11.3
8.2
5.8
4.6
−
41.6
12.6
8.7
6.1
5.0
−
58.1
17.6
11.7
8.1
6.1
−
−
−
pF
pF
pF
ns
ns
Symbol
t
PLH
,
t
PHL
Parameter
Test Condition
C
L
= 10 pF,
R
L
= 1 MW
V
CC
(V)
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
C
L
= 15 pF,
R
L
= 1 MW
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
C
L
= 30 pF,
R
L
= 1 MW
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
C
IN
C
O
C
PD
Input Capacitance
Output Capacitance
Power Dissipation
Capacitance (Note 5)
V
O
= GND
f = 10 MHz
0 to 3.6
0
0.9 to 3.6
−
Min
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
−
22.6
10.5
7.8
5.4
4.4
−
25.1
11.5
8.4
5.7
4.6
−
35.7
15.8
10.7
6.9
5.2
−
−
−
Unit
ns
Propagation Delay,
A or Y
27.3
13.0
7.5
6.0
4.3
3.5
29.5
14.3
8.0
6.3
4.6
3.7
40.5
19.6
10.7
7.8
5.4
4.3
3
3
4
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load
dynamic power consumption; P
D
= C
PD
V
CC2
f
in
+ I
CC
V
CC
.
www.onsemi.com
4
NL17SG14
A or B
50%
GND
t
PLH
Y
t
PHL
V
CC
50% V
CC
Figure 5. Switching Waveform
INPUT
C
L
*
OUTPUT
*Includes all probe and jig capacitance.
A 1 MHz square input wave is recommended for
propagation delay tests.
Figure 6. Test Circuit
ORDERING INFORMATION
Device
NL17SG14P5T5G
NL17SG14DFT2G
NLV17SG14DFT2G*
NL17SG14AMUTCG
(In Development)
NL17SG14CMUTCG
(In Development)
Package
SOT−953
(Pb−Free)
SC−88A
(Pb−Free)
SC−88A
(Pb−Free)
UDFN6 1.45x1 mm
(Pb−Free)
UDFN6 1x1 mm
(Pb−Free)
Shipping
†
8000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
www.onsemi.com
5