VS-20ETF02FP-M3, VS-20ETF04FP-M3, VS-20ETF06FP-M3
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
• Glass passivated pellet chip junction
• 150 °C max. operation junction temperature
1
Cathode
2
2
Anode
• Designed and qualified
JEDEC
®
-JESD 47
• UL pending
according
to
1
• Fully isolated package (V
INS
= 2500 V
RMS
)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
2L TO-220 FullPAK
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
FSM
t
rr
T
J
max.
Snap factor
Package
Circuit configuration
20 A
200 V, 400 V, 600 V
1.3 V
300 A
60 ns
150 °C
0.6
2L TO-220 FullPAK
Single
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-20ETF0..FP... fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
t
rr
T
J
10 A, T
J
= 25 °C
1 A, 100 A/μs
CHARACTERISTICS
Sinusoidal waveform
VALUES
20
200 to 600
300
1.2
60
-40 to +150
UNITS
A
V
A
V
ns
°C
VOLTAGE RATINGS
PART NUMBER
VS-20ETF02FP-M3
VS-20ETF04FP-M3
VS-20ETF06FP-M3
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
200
400
600
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
300
500
700
5
I
RRM
AT 150 °C
mA
Revision: 15-Sep-17
Document Number: 96296
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETF02FP-M3, VS-20ETF04FP-M3, VS-20ETF06FP-M3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle non-repetitive
surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 51 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
20
250
300
316
442
4420
A
2
s
A
2
s
A
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
20 A, T
J
= 25 °C
60 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.30
1.67
12.5
0.9
0.1
5.0
UNITS
V
m
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 20 A
pk
100 A/μs
25 °C
Typical
VALUES
160
10
1.25
0.6
UNITS
ns
A
μC
dir
dt
I
FM
t
a
t
rr
t
b
Q
rr
I
RM(REC)
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style 2L TO-220 FullPAK
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth, and greased
DC operation
TEST CONDITIONS
VALUES
-40 to +150
2.5
62
0.5
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
20ETF02FP
Marking device
20ETF04FP
20ETF06FP
°C/W
UNITS
°C
Mounting torque
Revision: 15-Sep-17
Document Number: 96296
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETF02FP-M3, VS-20ETF04FP-M3, VS-20ETF06FP-M3
www.vishay.com
Vishay Semiconductors
Maximum Average Forward Power Loss (W)
45
40
35
30
25
20
15
10
5
0
0
5
10
15
20
25
30
35
Maximum Allowable Case Temperature (°C)
160
120
DC
180°
120°
90°
60°
30°
RMS limit
80
Ø
Conduction period
40
30°
60°
90°
120°
180°
T
J
= 150 °C
0
0
4
8
12
16
20
Average On-State Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
Maximum Allowable Case Temperature (°C)
Peak Half Sine Wave Forward Current (A)
150
300
At any rated load condition and
with
rated
V
RRM
applied following surge.
250
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
100
200
150
50
30°
60°
90°
120°
180°
25
DC
30
35
100
0
0
5
10
15
20
50
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Average ForwardPower Loss (W)
Peak Half Sine Wave Forward Current (A)
35
30
25
20
15
Ø
550
500
450
400
350
300
250
200
150
100
50
0.001
0.01
0.1
1
Maximum non-repetitive surge current
vs.
pulse train duration.
Initial T
J
= 150 °C
No
voltage
reapplied
Rated
V
RRM
reapplied
180°
120°
90°
60°
30°
RMS limit
10
5
0
0
5
10
Conduction angle
T
J
= 150 °C
15
20
25
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 15-Sep-17
Document Number: 96296
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETF02FP-M3, VS-20ETF04FP-M3, VS-20ETF06FP-M3
www.vishay.com
Q
rr
- Typical Reverse Recovery Charge (µC)
1000
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
FM
= 1 A
0
0
200
400
600
800
1000
I
FM
= 10 A
T
J
= 25 °C
I
FM
= 30 A
Vishay Semiconductors
Instantaneous Forward Current (A)
100
I
FM
= 20 A
10
T
J
= 25 °C
T
J
= 150 °C
20ETF.. Series
I
FM
= 5 A
1
0
1
2
3
4
5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
t
rr
- Typical Reverse Recovery Time (µs)
Q
rr
- Typical Reverse Recovery Charge (µC)
0.20
T
J
= 25 °C
0.15
I
FM
= 30 A
0.10
I
FM
= 20 A
I
FM
= 10 A
0.05
I
FM
= 5 A
I
FM
= 1 A
0
0
200
400
600
800
1000
10
9
8
7
6
5
4
3
2
1
0
0
200
400
600
800
1000
I
FM
= 5 A
I
FM
= 1 A
I
FM
= 10 A
I
FM
= 20 A
T
J
= 150 °C
I
FM
= 30 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
Maximum Average ForwardPower Loss (W)
I
rr
- Typical Reverse Recovery Current (A)
35
30
25
20
15
Ø
70
60
50
40
30
I
FM
= 5 A
20
10
0
0
200
400
600
800
1000
T
J
= 25 °C
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
180°
120°
90°
60°
30°
RMS limit
10
5
0
0
5
10
Conduction angle
T
J
= 150 °C
I
FM
= 1 A
15
20
25
Average Forward Current (A)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
Revision: 15-Sep-17
Document Number: 96296
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETF02FP-M3, VS-20ETF04FP-M3, VS-20ETF06FP-M3
www.vishay.com
I
rr
- Typical Reverse Recovery Current (A)
100
T
J
= 150 °C
80
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
40
I
FM
= 5 A
20
I
FM
= 1 A
Vishay Semiconductors
60
0
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Z
thJC
- Transient Thermal Impedance (K/W)
10
D = 0.5
D = 0.2
1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
0.1
Single
Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Revision: 15-Sep-17
Document Number: 96296
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
