ARF465A(G)
ARF465B(G)
*G Denotes RoHS Compliant, Pb Free Terminal Finish
TO-247
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
300V
Common
Source
150W
60MHz
The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull
scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.
•
Specified 300 Volt, 40.68 MHz Characteristics:
•
Output Power = 150 Watts.
•
Gain = 13dB (Class C)
•
Efficiency = 75%
•
Low Cost Common Source RF Package.
•
Low Vth thermal coefficient.
•
Low Thermal Resistance.
•
Optimized SOA for Superior Ruggedness.
All Ratings: T
C
= 25°C unless otherwise specified.
ARF465A/B(G)
UNIT
Volts
Amps
Volts
Watts
°C/W
°C
MAXIMUM RATINGS
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
θ
JC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25°C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
1200
1200
6
±30
250
0.50
-55 to 150
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
μA)
1
MIN
TYP
MAX
UNIT
Volts
1200
8
25
250
±100
3
3
4
5
V
DS
(ON) On State Drain Voltage
I
DSS
I
GSS
g
fs
V
GS
(TH)
(I
D
(ON) = 3A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 3A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
μA
nA
050-4921 Rev B 1-2013
mhos
Volts
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 200V
f = 1 MHz
V
GS
= 15V
V
DD
= 0.5V
I
D
= I
D[Cont.]
@ 25°C
R
G
= 1.6W
MIN
TYP
ARF465A/B(G)
MAX
UNIT
1200
80
30
7
5
21
12
1500
100
50
15
10
34
25
ns
pF
FUNCTIONAL CHARACTERISTICS
Symbol
G
PS
η
Ψ
1
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 6:1
Test Conditions
f = 40.68 MHz
V
GS
= 0V
V
DD
= 300V
MIN
TYP
MAX
UNIT
dB
%
13
70
15
75
P
out
= 150W
No Degradation in Output Power
Pulse Test: Pulse width < 380
μS,
Duty Cycle < 2%
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
25
Class C
V
DD
= 300V
20
P
out
= 150W
CAPACITANCE (pf)
10,000
5000
C
iss
1000
500
GAIN (dB)
15
10
100
50
C
oss
5
C
rss
10
0.1
1
10
100 300
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
0
10 20
40 50 60 70 80 90 100
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
30
10
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
V
DS
> I
D
(ON) x R
DS
(ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
24
10
5
OPERATION HERE
(ON)
LIMITED BY R
DS
8
6
100uS
050-4921 Rev B 1-2013
4
1
.5
T
C
=+25°C
T
J
=+150°C
SINGLE PULSE
1mS
10mS
DC
T
J
= -55°C
T
J
= +25°C
T
J
= +125°C
2
0
0
1
2
3
4
5
6
7
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
.1
1
10
100
1200
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
1.2
1.1
1
0.9
0.8
0.7
0.6
-50
I
D
, DRAIN CURRENT (AMPERES)
10
ARF465A/B(G)
V
GS
=15V, 10V, 7V
6.5V
6V
V
GS(th)
, THRESHOLD VOLTAGE
(NORMALIZED)
8
6
5.5V
4
5V
2
4.5V
0
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
-25
0
25
50
75
100 125
T
C
, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
0.60
0.50
0.9
0.40
0.30
0.7
0.5
Z
θJC
, THERMAL IMPEDANCE (°C/W)
Note:
P
DM
0.20
0.10
0
10
-5
0.3
0.1
0.05
10
-4
t1
t2
SINGLE PULSE
Duty Factor D =
1
/
t2
Peak T
J
= P
DM
x Z
θJC + T C
t
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
Junction
temp. ( ”C)
0.0284
0.00155F
1.0
Power
(Watts)
0.165
0.00934F
0.307
Case temperature
0.128F
Figure 9a, TRANSIENT THERMAL IMPEDANCE MODEL
Table 1 - Typical Class AB Large Signal input - Output Impedance
Freq. (MHz)
2.0
13.5
27
40
65
Z
in
(Ω)
21.4 - j 8.7
2.6 - j 7.3
.54 - j 2.9
.22 - j .69
.31 + j 1.65
Z
OL
(Ω)
206 - j 45
68 - j 99
22 - j 64
10.5 - j 44
4.4 - j 27
Z
in
- Gate shunted with 25Ω
I
DQ
= 100mA
Z
OL
- Conjugate of optimum load for 150 Watts output at V
dd
= 300V
050-4921 Rev B 1-2013
ARF465A/B(G)
Bias
+
0 - 6V
-
C6
RF
Input
R1
C7 L5
L4
C9
L1
R2
C1
L2
DUT
L3
C8
+
300V
-
C4
RF
Output
C3
C2
40.68 MHz Test Circuit
C1 - 1000pF 100V chip ATC 700B
C2-C5 - Arco 463 Mica trimmer
C6-C8 - .01
μF
500V ceramic chip
C9 - 2200 pF COG 500 V chip
L1 - 4t #20 AWG .25"ID .3"L ~110 nH
L2 - 2t #20 AWG .25"ID .3"L ~ 25 nH
L3-- 4t #16 AWG .4" ID .5"L ~290 nH
L4 -- 25t #24 AWG .35"ID ~2uH
L5-- VK200-4B ferrite choke 3uH
R1-R2 -- 51 Ohm 0.5W Carbon
DUT = ARF465A/B
TO-247 Package Outline
4.69 .185
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Source
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
NOTE:
These two parts comprise a symmetric pair of RF
power transistors and meet the same electrical specifications.
The device pin-outs are the mirror image of each other to
allow ease of use as a push-pull pair.
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Device
ARF- A
ARF- B
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate ------- Drain
Source ---- Source
Drain ------- Gate
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
050-4921 Rev B 1-2013
Dimensions in Millimeters and (Inches)
HAZARDOUS MATERIAL WARNING:
The ceramic portion of the device between leads and mounting
fl
ange
is beryllium oxide. Beryllium oxide dust is highly toxic when inhaled.
Care must be taken during handling and mounting to avoid damage
to this area. These devices must never be thrown away with general
industrial or domestic waste.
ARF465A/B(G)
Disclaimer:
The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND
CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used
without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with
Microsemi, then the terms of such Agreement will also apply . This document and the information contained herein may not be modified, by
any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or
otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This
product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or
applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or
use of Microsemi products including liability or warranties relating to
fi
tness for a particular purpose, merchantability, or infringement of any
patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers
fi
nal application. User or
customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s re-
sponsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein
is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi
specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is
subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
050-4921 Rev B 1-2013
MEMS传感器
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