MOSFET 16.5v 1.50hm
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | Microchip(微芯科技) |
产品种类 Product Category | MOSFET |
RoHS | Details |
技术 Technology | Si |
Number of Channels | 1 Channel |
Transistor Polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 16.5 V |
Rds On - Drain-Source Resistance | 1.5 Ohms |
Configuration | Single |
系列 Packaging | Cut Tape |
系列 Packaging | Reel |
产品 Product | MOSFET Small Signal |
Transistor Type | 1 P-Channel |
工厂包装数量 Factory Pack Quantity | 2500 |
LP0701LG-G/TR | LP0701N3-G P005 | LP0701N3P003-G | LP0701LG | LP0701N3P003 | LP0701N3P013 | LP0701N3P002-G | LP0701N3 | LP0701N3-G P003 | |
---|---|---|---|---|---|---|---|---|---|
描述 | MOSFET 16.5v 1.50hm | MOSFET P-CH Enhancmnt Mode MOSFET | MOSFET 16.5V 1.5Ohm | MOSFET 16.5V 1.5Ohm | MOSFET 16.5V 1.5Ohm | MOSFET 16.5V 1.5Ohm | MOSFET 16.5V 1.5Ohm | MOSFET 16.5V 1.5Ohm | MOSFET P-CH Enhancmnt Mode MOSFET |
Product Attribute | Attribute Value | Attribute Value | Attribute Value | Attribute Value | Attribute Value | Attribute Value | Attribute Value | Attribute Value | - |
制造商 Manufacturer |
Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | - |
产品种类 Product Category |
MOSFET | MOSFET | MOSFET | MOSFET | MOSFET | MOSFET | MOSFET | MOSFET | - |
RoHS | Details | Details | Details | N | N | N | Details | N | - |
技术 Technology |
Si | Si | Si | Si | Si | Si | Si | Si | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel | 1 Channel | 1 Channel | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | - |
Vds - Drain-Source Breakdown Voltage | - 16.5 V | - 16.5 V | - 16.5 V | - 16.5 V | - 16.5 V | - 16.5 V | - 16.5 V | - 16.5 V | - |
Rds On - Drain-Source Resistance | 1.5 Ohms | 4 Ohms | 1.5 Ohms | 1.5 Ohms | 1.5 Ohms | 1.5 Ohms | 1.5 Ohms | 1.5 Ohms | - |
Configuration | Single | Single | Single | Single Quad Drain | Single | Single | Single | Single | - |
Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel | 1 P-Channel | 1 P-Channel | 1 P-Channel | 1 P-Channel | 1 P-Channel | - |
工厂包装数量 Factory Pack Quantity |
2500 | 2000 | 2000 | 2500 | 2000 | 2000 | 2000 | 1000 | - |
安装风格 Mounting Style |
- | Through Hole | Through Hole | SMD/SMT | Through Hole | Through Hole | Through Hole | Through Hole | - |
封装 / 箱体 Package / Case |
- | TO-92-3 | TO-92-3 | SOIC-8 | TO-92-3 | TO-92-3 | TO-92-3 | TO-92-3 | - |
Id - Continuous Drain Current | - | - 500 mA | - 500 mA | - 700 mA | - 500 mA | - 500 mA | - 500 mA | - 500 mA | - |
Channel Mode | - | Enhancement | Enhancement | Enhancement | Enhancement | Enhancement | Enhancement | Enhancement | - |
单位重量 Unit Weight |
- | 0.016000 oz | 0.016000 oz | 0.002998 oz | 0.007760 oz | 0.007760 oz | 0.016000 oz | 0.007760 oz | - |
Vgs - Gate-Source Voltage | - | - | 10 V | 10 V | 10 V | 10 V | 10 V | 10 V | - |
最小工作温度 Minimum Operating Temperature |
- | - | - 55 C | - 55 C | - 55 C | - 55 C | - 55 C | - 55 C | - |
最大工作温度 Maximum Operating Temperature |
- | - | + 150 C | + 150 C | + 150 C | + 150 C | + 150 C | + 150 C | - |
Pd-功率耗散 Pd - Power Dissipation |
- | - | 1 W | 1.5 W | 1 W | 1 W | 1 W | 1 W | - |
类型 Type |
- | - | MOSFET | MOSFET | MOSFET | MOSFET | MOSFET | MOSFET | - |
Fall Time | - | - | 30 ns | 20 ns | 30 ns | 30 ns | 30 ns | 30 ns | - |
Rise Time | - | - | 20 ns | 20 ns | 20 ns | 20 ns | 20 ns | 20 ns | - |
Typical Turn-Off Delay Time | - | - | 30 ns | 30 ns | 30 ns | 30 ns | 30 ns | 30 ns | - |
Typical Turn-On Delay Time | - | - | 20 ns | 20 ns | 20 ns | 20 ns | 20 ns | 20 ns | - |
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