PD - 97316
IRG4PC50SDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Standard: Optimized for minimum saturation voltage
and low operating frequencies (<1kHz)
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
Industry standard TO-247AC package
Standard Speed CoPack IGBT
Features
C
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.28V
@V
GE
= 15V, I
C
= 41A
Benefits
n-channel
Generation -4 IGBT's offer highest efficiencies
available
IGBT's optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
C
E
C
G
TO-247AC
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Max.
600
70
41
140
140
25
280
±20
200
78
-55 to +150
Units
V
c
Clamped Inductive Load Current
Diode Continous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
d
e
A
Continuous Gate-to-Emitter Voltage
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
R
θJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.64
0.83
–––
40
Units
°C/W
1
www.irf.com
04/16/08
IRG4PC50SDPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
∆V
(BR)CES
/∆T
J
Min.
600
—
—
—
—
3.0
—
17
—
—
—
—
—
—
Typ.
—
0.75
1.28
1.62
1.25
—
-9.3
34
—
—
—
1.3
1.2
—
Max. Units
—
—
1.36
—
—
6.0
—
—
250
2.0
1000
1.7
1.5
±100
nA
V
µA
V
V
Conditions
V
GE
= 0V, I
C
= 250µA
Ref.Fig
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
I
C
= 41A, V
GE
= 15V, T
J
= 25°C
V
I
C
= 80A, V
GE
= 15V, T
J
= 25°C
I
C
= 41A, V
GE
= 15V, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250µA
2
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆TJ
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
3
gfe
I
CES
V
FM
I
GES
mV/°C V
CE
= V
GE
, I
C
= 250µA (25°C - 150°C)
S V
CE
= 100V, I
C
= 41A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
F
= 25A
I
F
= 25A, T
J
= 150°C
V
GE
= ±20V
13
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery During t
b
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
180
24
61
0.72
8.27
8.99
33
30
650
400
15
31
31
1080
620
4100
250
48
50
105
4.5
8.0
112
420
250
160
Max. Units
280
37
92
—
—
13
—
—
980
600
—
—
—
—
—
—
—
—
75
160
10
15
375
1200
—
—
nC
A
ns
pF
V
GE
= 0V
V
CC
= 30V
ns
mJ
ns
mJ
nC
I
C
= 41A
V
GE
= 15V
V
CC
= 400V
Conditions
Ref.Fig
8
I
C
= 41A, V
CC
= 480V, V
GE
= 15V
R
G
= 5.0Ω, T
J
= 25°C
Energy losses include tail & diode reverse recovery
18a, 18b
18c
I
C
= 41A, V
CC
= 480V, V
GE
= 15V
R
G
= 5.0Ω, L = 200µH, T
J
= 25°C
18a, 18b
18c
I
C
= 41A, V
CC
= 480V, V
GE
= 15V
R
G
= 5.0Ω, L = 200µH
T
J
= 150°C
18a, 18b
18c
7
f = 1.0Mhz
T
J
= 25°C, V
R
= 200V, I
F
= 25A, di/dt=200A/µs
T
J
= 125°C, V
R
= 200V, I
F
= 25A, di/dt=200A/µs
T
J
= 25°C, V
R
= 200V, I
F
= 25A, di/dt=200A/µs
T
J
= 125°C, V
R
= 200V, I
F
= 25A, di/dt=200A/µs
T
J
= 25°C, V
R
= 200V, I
F
= 25A, di/dt=200A/µs
T
J
= 125°C, V
R
= 200V, I
F
= 25A, di/dt=200A/µs
14
18a, 18d
15
18a, 18d
16
18a, 18d
17
A/µs T
J
= 25°C, V
R
= 200V, I
F
= 25A, di/dt=200A/µs
T
J
= 125°C, V
R
= 200V, I
F
= 25A, di/dt=200A/µs
Notes:
Repetitive
rating: V
GE
=15V; pulse width limited by maximum junction temperature. (See figure 20)
V
CC
=80%(V
CES
), V
GE
=15V, R
G
= 5.0Ω. (See figure 19)
Pulse
width
≤
80µs; duty factor
≤
0.1%.
2
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