EEPROM 8K 1K X 8 2.5V SER EE EXT 1/2 ARRAY WP
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 零件包装代码 | SOIC |
| 包装说明 | 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 |
| 针数 | 8 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| Factory Lead Time | 15 weeks |
| 最大时钟频率 (fCLK) | 0.4 MHz |
| 数据保留时间-最小值 | 200 |
| 耐久性 | 1000000 Write/Erase Cycles |
| I2C控制字节 | 1010XMMR |
| JESD-30 代码 | R-PDSO-G8 |
| JESD-609代码 | e3 |
| 长度 | 4.9 mm |
| 内存密度 | 2048 bit |
| 内存集成电路类型 | EEPROM |
| 内存宽度 | 8 |
| 湿度敏感等级 | 3 |
| 功能数量 | 1 |
| 端子数量 | 8 |
| 字数 | 256 words |
| 字数代码 | 256 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 256X8 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | SOP |
| 封装等效代码 | SOP8,.25 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 并行/串行 | SERIAL |
| 峰值回流温度（摄氏度） | 260 |
| 电源 | 3/5 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 1.75 mm |
| 串行总线类型 | I2C |
| 最大待机电流 | 0.000001 A |
| 最大压摆率 | 0.003 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 2.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子面层 | Matte Tin (Sn) - annealed |
| 端子形式 | GULL WING |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 40 |
| 宽度 | 3.9 mm |
| 最长写入周期时间 (tWC) | 5 ms |
| 写保护 | HARDWARE |
| Base Number Matches | 1 |
| 24LC08BH-I/SN | 24LC08BHT-E-SN | 24LC08BHT-I-MS | 24AA08H-I-P | 24LC08BH-E/MS | 24LC08BHT-I/OT | 24AA08HT-I/ST | 24LC08BH-E/ST | |
|---|---|---|---|---|---|---|---|---|
| 描述 | EEPROM 8K 1K X 8 2.5V SER EE EXT 1/2 ARRAY WP | EEPROM 8K 1K X 8 2.5V SER EE EXT 1/2 ARRAY WP | EEPROM 8K 1K X 8 2.5V SER EE IND 1/2 ARRAY WP | EEPROM 8K 1K X 8 1.8V SER EE IND 1/2 ARRAY WP | 电可擦除可编程只读存储器 8K 1K X 8 2.5V SER EE EXT 1/2 ARRAY WP | 电可擦除可编程只读存储器 8K 1K X 8 2.5V SER EE IND 1/2 ARRAY WP | 电可擦除可编程只读存储器 8K 1K X 8 1.8V SER EE IND 1/2 ARRAY WP | 电可擦除可编程只读存储器 8K 1K X 8 2.5V SER EE EXT 1/2 ARRAY WP |
| 是否无铅 | 不含铅 | - | - | - | 不含铅 | 不含铅 | 不含铅 | 不含铅 |
| 是否Rohs认证 | 符合 | - | - | - | 符合 | 符合 | 符合 | 符合 |
| 零件包装代码 | SOIC | - | - | - | MSOP | SOT-23 | SOIC | SOIC |
| 包装说明 | 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 | - | - | - | ROHS COMPLIANT, PLASTIC, MSOP-8 | LSSOP, TSOP5/6,.11,37 | 4.40 MM, ROHS COMPLIANT, PLASTIC, TSSOP-8 | 4.40 MM, ROHS COMPLIANT, PLASTIC, TSSOP-8 |
| 针数 | 8 | - | - | - | 8 | 5 | 8 | 8 |
| Reach Compliance Code | compliant | - | - | - | compliant | compliant | compliant | compliant |
| ECCN代码 | EAR99 | - | - | - | EAR99 | EAR99 | EAR99 | EAR99 |
| Factory Lead Time | 15 weeks | - | - | - | 8 weeks | 13 weeks | 13 weeks | 6 weeks |
| 最大时钟频率 (fCLK) | 0.4 MHz | - | - | - | 0.4 MHz | 0.4 MHz | 0.1 MHz | 0.4 MHz |
| 数据保留时间-最小值 | 200 | - | - | - | 200 | 200 | 200 | 200 |
| 耐久性 | 1000000 Write/Erase Cycles | - | - | - | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles |
| I2C控制字节 | 1010XMMR | - | - | - | 1010XMMR | 1010XMMR | 1010XMMR | 1010XMMR |
| JESD-30 代码 | R-PDSO-G8 | - | - | - | S-PDSO-G8 | R-PDSO-G5 | R-PDSO-G8 | R-PDSO-G8 |
| JESD-609代码 | e3 | - | - | - | e3 | e3 | e3 | e3 |
| 长度 | 4.9 mm | - | - | - | 3 mm | 2.9 mm | 4.4 mm | 4.4 mm |
| 内存密度 | 2048 bit | - | - | - | 2048 bit | 2048 bit | 2048 bit | 2048 bit |
| 内存集成电路类型 | EEPROM | - | - | - | EEPROM | EEPROM | EEPROM | EEPROM |
| 内存宽度 | 8 | - | - | - | 8 | 8 | 8 | 8 |
| 湿度敏感等级 | 3 | - | - | - | 1 | 1 | 1 | 1 |
| 功能数量 | 1 | - | - | - | 1 | 1 | 1 | 1 |
| 端子数量 | 8 | - | - | - | 8 | 5 | 8 | 8 |
| 字数 | 256 words | - | - | - | 256 words | 256 words | 256 words | 256 words |
| 字数代码 | 256 | - | - | - | 256 | 256 | 256 | 256 |
| 工作模式 | SYNCHRONOUS | - | - | - | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 85 °C | - | - | - | 125 °C | 85 °C | 85 °C | 125 °C |
| 最低工作温度 | -40 °C | - | - | - | -40 °C | -40 °C | -40 °C | -40 °C |
| 组织 | 256X8 | - | - | - | 256X8 | 256X8 | 256X8 | 256X8 |
| 封装主体材料 | PLASTIC/EPOXY | - | - | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | SOP | - | - | - | TSSOP | LSSOP | TSSOP | TSSOP |
| 封装等效代码 | SOP8,.25 | - | - | - | TSSOP8,.19 | TSOP5/6,.11,37 | TSSOP8,.25 | TSSOP8,.25 |
| 封装形状 | RECTANGULAR | - | - | - | SQUARE | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | - | - | - | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
| 并行/串行 | SERIAL | - | - | - | SERIAL | SERIAL | SERIAL | SERIAL |
| 峰值回流温度（摄氏度） | 260 | - | - | - | 260 | 260 | 260 | 260 |
| 电源 | 3/5 V | - | - | - | 3/5 V | 3/5 V | 2/5 V | 3/5 V |
| 认证状态 | Not Qualified | - | - | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 1.75 mm | - | - | - | 1.1 mm | 1.45 mm | 1.2 mm | 1.2 mm |
| 串行总线类型 | I2C | - | - | - | I2C | I2C | I2C | I2C |
| 最大待机电流 | 0.000001 A | - | - | - | 0.000005 A | 0.000001 A | 0.000001 A | 0.000005 A |
| 最大压摆率 | 0.003 mA | - | - | - | 0.003 mA | 0.003 mA | 0.003 mA | 0.003 mA |
| 最大供电电压 (Vsup) | 5.5 V | - | - | - | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 2.5 V | - | - | - | 2.5 V | 2.5 V | 1.7 V | 2.5 V |
| 标称供电电压 (Vsup) | 5 V | - | - | - | 5 V | 5 V | 2.5 V | 5 V |
| 表面贴装 | YES | - | - | - | YES | YES | YES | YES |
| 技术 | CMOS | - | - | - | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | - | - | - | AUTOMOTIVE | INDUSTRIAL | INDUSTRIAL | AUTOMOTIVE |
| 端子面层 | Matte Tin (Sn) - annealed | - | - | - | Matte Tin (Sn) - annealed | Matte Tin (Sn) - annealed | Matte Tin (Sn) - annealed | Matte Tin (Sn) - annealed |
| 端子形式 | GULL WING | - | - | - | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子节距 | 1.27 mm | - | - | - | 0.65 mm | 0.95 mm | 0.65 mm | 0.65 mm |
| 端子位置 | DUAL | - | - | - | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | 40 | - | - | - | 40 | 40 | 40 | 40 |
| 宽度 | 3.9 mm | - | - | - | 3 mm | 1.55 mm | 3 mm | 3 mm |
| 最长写入周期时间 (tWC) | 5 ms | - | - | - | 5 ms | 5 ms | 5 ms | 5 ms |
| 写保护 | HARDWARE | - | - | - | HARDWARE | HARDWARE | HARDWARE | HARDWARE |
| Base Number Matches | 1 | - | - | - | 1 | 1 | 1 | 1 |
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