MJD47, NJVMJD47T4G,
MJD50
High Voltage Power
Transistors
DPAK for Surface Mount Applications
Designed for line operated audio output amplifier, switchmode supply
drivers and other switching applications.
Features
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•
Lead Formed for Surface Mount Applications in Plastic Sleeves
•
•
•
•
(No Suffix)
Electrically Similar to Popular TIP47, and TIP50
Epoxy Meets UL 94 V−0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
NPN SILICON POWER
TRANSISTORS
1 AMPERE
250, 400 VOLTS, 15 WATTS
COLLECTOR
2, 4
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
MJD47, NJVMJD47T4G
MJD50
Collector−Base Voltage
MJD47, NJVMJD47T4G
MJD50
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
ESD − Human Body Model
ESD − Machine Model
Symbol
V
CEO
250
400
V
CB
350
500
V
EB
I
C
I
CM
I
B
P
D
15
0.12
P
D
1.56
0.0125
T
J
, T
stg
HBM
MM
−65 to +150
3B
C
W
W/°C
°C
V
V
W
W/°C
5
1
2
0.6
Vdc
Adc
Adc
Adc
Vdc
Max
Unit
Vdc
1
BASE
3
EMITTER
4
1 2
3
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
AYWW
JxxG
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
A
Y
WW
Jxx
G
= Assembly Location
= Year
= Work Week
= Device Code
xx = 47 or 50
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2013
1
August, 2013 − Rev. 14
Publication Order Number:
MJD47/D
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3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS
(Note 3)
OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
THERMAL CHARACTERISTICS
Small−Signal Current Gain
(I
C
= 0.2 Adc, V
CE
= 10 Vdc, f = 1 kHz)
Current Gain − Bandwidth Product
(I
C
= 0.2 Adc, V
CE
= 10 Vdc, f = 2 MHz)
Base−Emitter On Voltage
(I
C
= 1 Adc, V
CE
= 10 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 1 Adc, I
B
= 0.2 Adc)
DC Current Gain
(I
C
= 0.3 Adc, V
CE
= 10 Vdc)
(I
C
= 1 Adc, V
CE
= 10 Vdc)
Emitter Cutoff Current
(V
BE
= 5 Vdc, I
C
= 0)
Collector Cutoff Current
(V
CE
= 350 Vdc, V
BE
= 0)
MJD47, NJVMJD47T4G
(V
CE
= 500 Vdc, V
BE
= 0)
MJD50
Collector Cutoff Current
(V
CE
= 150 Vdc, I
B
= 0)
MJD47, NJVMJD47T4G
(V
CE
= 300 Vdc, I
B
= 0)
MJD50
Collector−Emitter Sustaining Voltage (Note 3)
(I
C
= 30 mAdc, I
B
= 0)
MJD47, NJVMJD47T4G
MJD50
Lead Temperature for Soldering Purpose
Thermal Resistance Junction−to−Ambient (Note 2)
Thermal Resistance Junction−to−Case
Characteristic
Characteristic
MJD47, NJVMJD47T4G, MJD50
http://onsemi.com
V
CEO(sus)
Symbol
V
CE(sat)
V
BE(on)
I
CEO
I
EBO
I
CES
h
FE
h
fe
f
T
Symbol
R
qJC
R
qJA
Min
250
400
25
10
30
10
T
L
−
−
−
−
−
−
−
8.33
Max
Max
260
150
−
1.5
0.1
0.1
0.2
0.2
80
2
−
−
−
1
1
−
mAdc
mAdc
mAdc
°C/W
°C/W
MHz
Unit
Unit
Vdc
Vdc
Vdc
°C
−
−
MJD47, NJVMJD47T4G, MJD50
TYPICAL CHARACTERISTICS
T
A
T
C
2.5 25
PD, POWER DISSIPATION (WATTS)
V
CC
2 20
TURN-ON PULSE
APPROX
+11 V
V
in
0
R
C
SCOPE
R
B
51
V
in
1.5 15
T
A
(SURFACE MOUNT)
1 10
T
C
V
EB(off)
t
1
t
3
C
jd
<< C
eb
t
1
≤
7 ns
10 < t
2
< 500
ms
t
3
< 15 ns
DUTY CYCLE
≈
2%
APPROX - 9 V
R
B
and R
C
VARIED TO OBTAIN
DESIRED CURRENT LEVELS.
-4 V
APPROX
+11 V
V
in
0.5
5
0
0
25
50
75
100
125
150
t
2
TURN-OFF PULSE
T, TEMPERATURE (°C)
Figure 1. Power Derating
Figure 2. Switching Time Equivalent Circuit
200
V
CE
= 10 V
100
hFE , DC CURRENT GAIN
60
40
20
10
6
4
2
0.02
V, VOLTAGE (VOLTS)
T
J
= 150°C
25°C
- 55°C
1.4
1.2
1
V
BE(sat)
@ I
C
/I
B
= 5
0.8
0.6
0.4
0.2
0
0.02
V
BE(on)
@ V
CE
= 4 V
T
J
= 25°C
V
CE(sat)
@ I
C
/I
B
= 5
0.1
0.2
0.4 0.6
0.04 0.06
I
C
, COLLECTOR CURRENT (AMPS)
1
2
0.2
0.4 0.6
0.04 0.06 0.1
I
C
, COLLECTOR CURRENT (AMPS)
1
2
Figure 3. DC Current Gain
Figure 4. “On” Voltages
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
qJC(t)
= r(t) R
qJC
R
qJC
= 8.33°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
20
30
50
100
200 300
500
1k
Figure 5. Thermal Response
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3
MJD47, NJVMJD47T4G, MJD50
5
IC, COLLECTOR CURRENT (AMP)
2
1
0.5
0.2
0.1
SECOND BREAKDOWN LIMIT
THERMAL LIMIT @ 25°C
WIRE BOND LIMIT
MJD47
CURVES APPLY BELOW
MJD50
RATED V
CEO
5
10
20
50
100
200 300
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
T
C
≤
25°C
1 ms
dc
500
ms
100
ms
0.05
0.02
0.01
0.005
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
≤
150_C. T
J(pk)
may be calculated from the data in
Figure 5. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 6. Active Region Safe Operating Area
1
0.5
t
r
t, TIME (
μ
s)
t
d
T
J
= 25°C
V
CC
= 200 V
I
C
/I
B
= 5
5
t
s
2
1
0.5
t
f
T
J
= 25°C
V
CC
= 200 V
I
C
/I
B
= 5
t, TIME (
μ
s)
0.2
0.1
0.05
0.2
0.1
0.05
0.02
0.02
0.01
0.02
0.05
0.1
0.2
0.5
I
C
, COLLECTOR CURRENT (AMPS)
1
2
0.05
0.1
0.2
0.5
I
C
, COLLECTOR CURRENT (AMPS)
1
2
Figure 7. Turn−On Time
Figure 8. Turn-Off Time
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4
MJD47, NJVMJD47T4G, MJD50
ORDERING INFORMATION
Device
MJD47G
MJD47T4G
NJVMJD47T4G
MJD50G
MJD50T4G
Package
369C
(Pb−Free)
369C
(Pb−Free)
369C
(Pb−Free)
369C
(Pb−Free)
369C
(Pb−Free)
Shipping
†
75 Units / Rail
2,500 / Tape & Reel
2,500 / Tape & Reel
75 Units / Rail
2,500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
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