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7024S35JI8

产品描述Dual-Port SRAM, 4KX16, 35ns, CMOS, PQCC84, PLASTIC, LCC-84
产品类别存储   
文件大小189KB,共22页
制造商IDT (Integrated Device Technology)
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7024S35JI8概述

Dual-Port SRAM, 4KX16, 35ns, CMOS, PQCC84, PLASTIC, LCC-84

7024S35JI8规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称IDT (Integrated Device Technology)
零件包装代码LCC
包装说明PLASTIC, LCC-84
针数84
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
最长访问时间35 ns
其他特性INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN
JESD-30 代码S-PQCC-J84
JESD-609代码e0
长度29.3116 mm
内存密度65536 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度16
功能数量1
端子数量84
字数4096 words
字数代码4000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织4KX16
封装主体材料PLASTIC/EPOXY
封装代码QCCJ
封装形状SQUARE
封装形式CHIP CARRIER
并行/串行PARALLEL
峰值回流温度(摄氏度)225
认证状态Not Qualified
座面最大高度4.57 mm
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层TIN LEAD
端子形式J BEND
端子节距1.27 mm
端子位置QUAD
处于峰值回流温度下的最长时间30
宽度29.3116 mm
Base Number Matches1

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HIGH-SPEED
4K x 16 DUAL-PORT
STATIC RAM
IDT7024S/L
Features
True Dual-Ported memory cells which allow simultaneous
reads of the same memory location
High-speed access
– Military: 20/25/35/55/70ns (max.)
– Industrial: 55ns (max.)
– Commercial: 15/17/20/25/35/55ns (max.)
Low-power operation
– IDT7024S
Active: 750mW (typ.)
Standby: 5mW (typ.)
– IDT7024L
Active: 750mW (typ.)
Standby: 1mW (typ.)
Separate upper-byte and lower-byte control for multiplexed
bus compatibility
IDT7024 easily expands data bus width to 32 bits or more
using the Master/Slave select when cascading more than
one device
M/S = H for
BUSY
output flag on Master
M/S = L for
BUSY
input on Slave
Interrupt Flag
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Battery backup operation—2V data retention
TTL-compatible, single 5V (±10%) power supply
Available in 84-pin PGA, Flatpack, PLCC, and 100-pin Thin
Quad Flatpack
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts availble, see ordering information
Functional Block Diagram
R/W
L
UB
L
R/W
R
UB
R
LB
L
CE
L
OE
L
LB
R
CE
R
OE
R
I/O
8L
-I/O
15L
I/O
0L
-I/O
7L
BUSY
L
A
11L
A
0L
(1,2)
I/O
8R
-I/O
15R
I/O
Control
I/O
Control
I/O
0R
-I/O
7R
BUSY
R
Address
Decoder
12
(1,2)
MEMORY
ARRAY
12
Address
Decoder
A
11R
A
0R
CE
L
OE
L
R/W
L
SEM
L
(2)
INT
L
NOTES:
1. (MASTER):
BUSY
is output; (SLAVE):
BUSY
is input.
2.
BUSY
outputs and
INT
outputs are non-tri-stated push-pull.
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
CE
R
OE
R
R/W
R
SEM
R
INT
R
(2)
2740 drw 01
M/S
JUNE 2013
1
©2013 Integrated Device Technology, Inc.
DSC 2740/14

7024S35JI8相似产品对比

7024S35JI8 7024S55PFI 7024L55PFI 7024S20PFI8 7024S20JI 7024S20JI8 7024S25JI8
描述 Dual-Port SRAM, 4KX16, 35ns, CMOS, PQCC84, PLASTIC, LCC-84 Dual-Port SRAM, 4KX16, 55ns, CMOS, PQFP100, TQFP-100 Multi-Port SRAM, 4KX16, 55ns, CMOS, PQFP100 Dual-Port SRAM, 4KX16, 20ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 Multi-Port SRAM, 4KX16, 20ns, CMOS, PQCC84, 1.150 X 1.150 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-84 Dual-Port SRAM, 4KX16, 20ns, CMOS, PQCC84, 1.150 X 1.150 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-84 Dual-Port SRAM, 4KX16, 25ns, CMOS, PQCC84, 1.150 X 1.150 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-84
Reach Compliance Code compliant not_compliant not_compliant not_compliant not_compliant not_compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最长访问时间 35 ns 55 ns 55 ns 20 ns 20 ns 20 ns 25 ns
JESD-30 代码 S-PQCC-J84 S-PQFP-G100 S-PQFP-G100 S-PQFP-G100 S-PQCC-J84 S-PQCC-J84 S-PQCC-J84
内存密度 65536 bit 65536 bit 65536 bit 65536 bit 65536 bit 65536 bit 65536 bit
内存集成电路类型 DUAL-PORT SRAM DUAL-PORT SRAM MULTI-PORT SRAM DUAL-PORT SRAM MULTI-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM
内存宽度 16 16 16 16 16 16 16
端子数量 84 100 100 100 84 84 84
字数 4096 words 4096 words 4096 words 4096 words 4096 words 4096 words 4096 words
字数代码 4000 4000 4000 4000 4000 4000 4000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
最低工作温度 - -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
组织 4KX16 4KX16 4KX16 4KX16 4KX16 4KX16 4KX16
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 QCCJ LFQFP QFP QFP QCCJ QCCJ QCCJ
封装形状 SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE
封装形式 CHIP CARRIER FLATPACK, LOW PROFILE, FINE PITCH FLATPACK FLATPACK CHIP CARRIER CHIP CARRIER CHIP CARRIER
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子形式 J BEND GULL WING GULL WING GULL WING J BEND J BEND J BEND
端子位置 QUAD QUAD QUAD QUAD QUAD QUAD QUAD
是否无铅 含铅 含铅 含铅 含铅 含铅 含铅 -
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 -
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) - IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
包装说明 PLASTIC, LCC-84 TQFP-100 - 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 1.150 X 1.150 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-84 1.150 X 1.150 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-84 1.150 X 1.150 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-84
JESD-609代码 e0 e0 e0 e0 e0 e0 -
功能数量 1 1 - 1 1 1 1
峰值回流温度(摄氏度) 225 240 240 240 225 225 -
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
最大供电电压 (Vsup) 5.5 V 5.5 V - 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V - 4.5 V 4.5 V 4.5 V 4.5 V
端子面层 TIN LEAD Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) -
端子节距 1.27 mm 0.5 mm 0.5 mm 0.5 mm 1.27 mm 1.27 mm -
处于峰值回流温度下的最长时间 30 20 20 20 30 30 -
Base Number Matches 1 1 1 1 - - -
I/O 类型 - COMMON COMMON COMMON COMMON COMMON -
湿度敏感等级 - 3 3 3 1 1 -
端口数量 - 2 2 2 2 2 -
输出特性 - 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE -
封装等效代码 - QFP100,.63SQ,20 QFP100,.63SQ,20 QFP100,.63SQ,20 LDCC84,1.2SQ LDCC84,1.2SQ -
电源 - 5 V 5 V 5 V 5 V 5 V -
最大待机电流 - 0.015 A 0.004 A 0.000015 A 0.000015 A 0.000015 A -
最小待机电流 - 4.5 V 2 V 4.5 V 4.5 V 4.5 V -
最大压摆率 - 0.3 mA 0.25 mA 0.29 mA 0.37 mA 0.29 mA -

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