HANBit
HMS12832M4V
SRAM MODULE 512KByte (128K x 32-Bit) 3.3V, 64Pin-SIMM
Part No. HMS12832M4V
GENERAL DESCRIPTION
The HMS12832M4V is a high-speed static random access memory (SRAM) module containing 131,072 words organized in
a x32-bit configuration. The module consists of four 128K x 8 SRAMs mounted on a 64-pin, single-sided, FR4-printed circuit
board.
PD0 and PD1 identify the module’s density allowing interchangeable use of alternate density, industry- standard modules. Four
chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’s 4 bytes independently. Output enable(/OE)
and write enable(/WE) can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW.
accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from
a single +3.3V DC power supply and all inputs and outputs are fully TTL-compatible.
Reading is
FEATURES
w
Access times : 8, 10, 12, 15 and 20ns
w
High-density 512KByte design
w
High-reliability, high-speed design
w
Single + 3.3V
±0.3V
power supply
w
Easy memory expansion with /CE and /OE functions
w
All inputs and outputs are TTL-compatible
w
Industry-standard pinout
w
FR4-PCB design
PIN ASSIGNMENT
PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL
1
2
3
4
5
6
7
8
Vss
NC
NC
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
Vcc
A0
A7
A1
A8
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
A2
A9
DQ12
DQ4
DQ13
DQ5
DQ14
DQ6
DQ15
DQ7
Vss
/WE
A15
A14
/CE2
/CE1
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
/CE4
/CE3
NC
A16
/OE
Vss
DQ24
DQ16
DQ25
DQ17
DQ26
DQ18
DQ27
DQ19
A3
A10
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
A4
A11
A5
A12
Vcc
A13
A6
DQ20
DQ28
DQ21
DQ29
DQ22
DQ30
DQ23
DQ31
Vss
OPTIONS
w
Timing
8ns access
10ns access
12ns access
15ns access
20ns access
w
Packages
64-pin SIMM
MARKING
- 8
-10
-12
-15
-20
M
9
10
11
12
13
14
15
16
SIMM
TOP VIEW
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002).
1
HANBit Electronics Co.,Ltd.
HANBit
FUNCTIONAL BLOCK DIAGRAM
32
17
A0-16
/WE
/OE
/CE
/CE1
A0-16
/WE
/OE
/CE
/CE2
A0-16
/WE
/OE
/CE
/CE3
A0-16
/WE
/OE
/WE
/OE
/CE
/CE4
DQ24-31
DQ16-23
DQ 8-15
DQ 0-7
HMS12832M4V
DQ0 - DQ31
A0 - A16
U1
U2
U3
U4
PRESENCE-DETECT
PD0 = Open
PD1 = Open
TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
WRITE
/OE
X
H
L
X
/CE
H
L
L
L
/WE
X
H
H
L
DQ
HIGH-Z
HIGH-Z
Dout
Din
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002).
2
HANBit Electronics Co.,Ltd.
HANBit
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
Voltage on Any Pin Relative to Vss
Voltage on Vcc Supply Relative to Vss
Power Dissipation
Storage Temperature
Operating Temperature
SYMBOL
V
IN,OUT
V
CC
P
D
T
STG
T
A
HMS12832M4V
RATING
-0.5V to 4.6V
-0.5V to 4.6V
4.0W
-65oC to +150oC
0oC to +70oC
w
Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
( TA=0 to 70 o C )
PARAMETER
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
*
SYMBOL
V
CC
V
SS
V
IH
V
IL
MIN
3.0V
0
2.2
-0.5*
TYP.
3.3V
0
-
-
MAX
3.6V
0
Vcc+0.5V**
0.8V
V
IL
(Min.) = -2.0V ac (Pulse Width
≤
10ns) for I
≤
20 mA
**
V
IH
(Min.) = Vcc+2.0V ac (Pulse Width
≤
10ns) for I
≤
20 mA
DC AND OPERATING CHARACTERISTICS (1)(0
oC
≤
TA
≤
70 oC ; Vcc = 3.3V
±
10% )
PARAMETER
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
* Vcc=3.3V, Temp=25 oC
TEST CONDITIONS
VIN=Vss to Vcc
/CE=V
IH or /
OE =V
IH
or /WE=V
IL
V
OUT
=Vss to V
CC
I
OH
= -4.0mA
I
OL
= 8.0mA
SYMBOL
IL
I
IL
0
V
OH
V
OL
MIN
-8
-8
2.4
0.4
MAX
8
8
UNITS
µA
µA
V
V
DC AND OPERATING CHARACTERISTICS (2)
DESCRIPTION
TEST CONDITIONS
Min. Cycle, 100% Duty
/CE=V
IL
, V
IN
=V
IH
or V
IL
,
I
OUT
=0mA
Min. Cycle, /CE=V
IH
f=0MHZ, /CE≥V
CC
-0.2V,
V
IN
≥
V
CC
-0.2V or V
IN
≤0.2V
I
SB
I
SB1
200
20
200
20
200
20
mA
mA
I
CC
640
620
600
mA
SYMBOL
MAX
-8
-10
-12
UNIT
Power Supply
Current:Operating
Power Supply
Current:Standby
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002).
3
HANBit Electronics Co.,Ltd.
HANBit
HMS12832M4V
CAPACITANCE
(TA =25 oC , f= 1.0Mhz)
DESCRIPTION
Input /Output Capacitance
Input Capacitance
TEST CONDITIONS
V
I/O
=0V
V
IN
=0V
SYMBOL
C
I/O
C
IN
MAX
32
24
UNIT
PF
PF
* NOTE : Capacitance is sampled and not 100% tested
AC CHARACTERISTICS
(0oC
≤
TA
≤
70 oC ; Vcc = 3.3V
±
0.3V, unless otherwise specified)
Test conditions
PARAMETER
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
VALUE
0V to 3V
3ns
1.5V
See below
Output Load (B)
for t
HZ
, t
LZ
, t
WHZ
, t
OW
, t
OLZ
& t
OHZ
Output Load (A)
V
L
=1.5V
+3.3V
50Ω
D
OUT
Z0=50Ω
30pF
D
OUT
353Ω
319Ω
5pF*
READ CYCLE
-10
PARAMETER
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Output
Output Enable to Low-Z Output
Chip Enable to Low-Z Output
Output Disable to High-Z Output
Chip Disable to High-Z Output
Output Hold from Address Change
Chip Select to Power Up Time
Chip Select to Power Down Time
SYMBOL
MIN
t
RC
t
AA
t
CO
t
OE
t
OLZ
t
LZ
t
OHZ
t
HZ
t
OH
t
PU
t
PD
0
3
0
0
3
0
-
10
5
5
10
10
10
5
0
3
0
0
3
0
12
6
6
MAX
MIN
12
12
12
6
0
3
0
0
3
0
15
7
7
MAX
MIN
15
15
15
7
MAX
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-12
-15
UNIT
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002).
4
HANBit Electronics Co.,Ltd.
HANBit
HMS12832M4V
WRITE CYCLE
PARAMETER
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End of Write to Output Low-Z
SYMBOL
t
WC
t
CW
t
AS
t
AW
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
-10
MIN
10
6
0
7
7
0
0
5
0
3
5
MAX
MIN
12
8
0
8
8
0
0
6
0
3
6
-12
MAX
MIN
15
10
0
9
9
0
0
7
0
3
7
-15
MAX
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TIMING DIAGRAMS
Please refer to timing diagram chart.
FUNCTIONAL DESCRIPTION
/CE
H
L
L
L
/WE
X*
H
H
L
/OE
X
H
L
X
MODE
Not Select
Output Disable
Read
Write
I/O PIN
High-Z
High-Z
D
OUT
D
IN
SUPPLY CURRENT
l
SB
, l
SB1
l
CC
l
CC
l
CC
Note: X means Don't Care
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002).
5
HANBit Electronics Co.,Ltd.
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
