74HC1G14; 74HCT1G14
Inverting Schmitt trigger
Rev. 6 — 27 December 2012
Product data sheet
1. General description
74HC1G14 and 74HCT1G14 are high-speed Si-gate CMOS devices. They provide an
inverting buffer function with Schmitt trigger action. These devices are capable of
transforming slowly changing input signals into sharply defined, jitter-free output signals.
The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V.
The HCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.
The standard output currents are half of those of the 74HC14 and 74HCT14.
2. Features and benefits
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
SOT353-1 and SOT753 package options
Specified from
40 C
to +125
C
3. Applications
Wave and pulse shapers
Astable multivibrators
Monostable multivibrators
4. Ordering information
Table 1.
Ordering information
Package
Temperature range
74HC1G14GW
74HCT1G14GW
74HC1G14GV
74HCT1G14GV
40 C
to +125
C
SC-74A
40 C
to +125
C
Name
TSSOP5
Description
plastic thin shrink small outline package;
5 leads; body width 1.25 mm
plastic surface-mounted package; 5 leads
Version
SOT353-1
SOT753
Type number
NXP Semiconductors
74HC1G14; 74HCT1G14
Inverting Schmitt trigger
5. Marking
Table 2.
Marking codes
Marking code
[1]
HF
TF
H14
T14
Type number
74HC1G14GW
74HCT1G14GW
74HC1G14GV
74HCT1G14GV
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
6. Functional diagram
2
A
Y
4
2
mna024
4
A
Y
mna025
mna023
Fig 1. Logic symbol
Fig 2. IEC logic symbol
Fig 3. Logic diagram
7. Pinning information
7.1 Pinning
74HC1G14
74HCT1G14
n.c.
A
1
2
5
V
CC
GND
3
001aaf106
4
Y
Fig 4. Pin configuration
7.2 Pin description
Table 3.
Symbol
n.c.
A
GND
Y
V
CC
Pin description
Pin
1
2
3
4
5
Description
not connected
data input
ground (0 V)
data output
supply voltage
74HC_HCT1G14
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 27 December 2012
2 of 16
NXP Semiconductors
74HC1G14; 74HCT1G14
Inverting Schmitt trigger
8. Functional description
Table 4.
Function table
H = HIGH voltage level; L = LOW voltage level
Input
A
L
H
Output
Y
H
L
9. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
[1]
Symbol
V
CC
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
<
0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
0.5
V or V
O
> V
CC
+ 0.5 V
0.5
V < V
O
< V
CC
+ 0.5 V
Min
0.5
-
-
-
-
25
65
Max
+7.0
20
20
12.5
25
-
+150
200
Unit
V
mA
mA
mA
mA
mA
C
mW
T
amb
=
40 C
to +125
C
[2]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
Above 55
C,
the value of P
tot
derates linearly with 2.5 mW/K.
10. Recommended operating conditions
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
CC
V
I
V
O
T
amb
supply voltage
input voltage
output voltage
ambient temperature
Conditions
Min
2.0
0
0
40
74HC1G14
Typ
5.0
-
-
+25
Max
6.0
V
CC
V
CC
+125
Min
4.5
0
0
40
74HCT1G14
Typ
5.0
-
-
+25
Max
5.5
V
CC
V
CC
+125
V
V
V
C
Unit
74HC_HCT1G14
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 27 December 2012
3 of 16
NXP Semiconductors
74HC1G14; 74HCT1G14
Inverting Schmitt trigger
11. Static characteristics
Table 7.
Static characteristics
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
= 25
C.
Symbol
Parameter
Conditions
40 C
to +85
C
Min
For type 74HC1G14
V
OH
HIGH-level output
voltage
V
I
= V
T+
or V
T
I
O
=
20 A;
V
CC
= 2.0 V
I
O
=
20 A;
V
CC
= 4.5 V
I
O
=
20 A;
V
CC
= 6.0 V
I
O
=
2.0
mA; V
CC
= 4.5 V
I
O
=
2.6
mA; V
CC
= 6.0 V
V
OL
LOW-level output
voltage
V
I
= V
T+
or V
T
I
O
= 20
A;
V
CC
= 2.0 V
I
O
= 20
A;
V
CC
= 4.5 V
I
O
= 20
A;
V
CC
= 6.0 V
I
O
= 2.0 mA; V
CC
= 4.5 V
I
O
= 2.6 mA; V
CC
= 6.0 V
I
I
I
CC
C
I
V
T+
input leakage current
supply current
input capacitance
positive-going
threshold voltage
see
Figure 7
and
Figure 8
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
T
negative-going
threshold voltage
see
Figure 7
and
Figure 8
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
H
hysteresis voltage
see
Figure 7
and
Figure 8
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
For type 74HCT1G14
V
OH
HIGH-level output
voltage
V
I
= V
T+
or V
T
I
O
=
20 A;
V
CC
= 4.5 V
I
O
=
2.0
mA; V
CC
= 4.5 V
V
OL
LOW-level output
voltage
V
I
= V
T+
or V
T
I
O
= 20
A;
V
CC
= 4.5 V
I
O
= 2.0 mA; V
CC
= 4.5 V
I
I
74HC_HCT1G14
40 C
to +125
C
Min
Max
Unit
Typ
Max
1.9
4.4
5.9
4.13
5.63
-
-
-
-
-
-
-
-
0.7
1.7
2.1
0.3
0.9
1.2
0.2
0.4
0.6
2.0
4.5
6.0
4.32
5.81
0
0
0
0.15
0.16
-
-
1.5
1.09
2.36
3.12
0.60
1.53
2.08
0.48
0.83
1.04
-
-
-
-
-
0.1
0.1
0.1
0.33
0.33
1.0
10
-
1.5
3.15
4.2
0.9
2.0
2.6
1.0
1.4
1.6
1.9
4.4
5.9
3.7
5.2
-
-
-
-
-
-
-
-
0.7
1.7
2.1
0.3
0.9
1.2
0.2
0.4
0.6
-
-
-
-
-
0.1
0.1
0.1
0.4
0.4
1.0
20
-
1.5
3.15
4.2
0.9
2.0
2.6
1.0
1.4
1.6
V
V
V
V
V
V
V
V
V
V
A
A
pF
V
V
V
V
V
V
V
V
V
V
I
= V
CC
or GND; V
CC
= 6.0 V
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 6.0 V
4.4
4.13
-
-
-
4.5
4.32
0
0.15
-
-
-
0.1
0.33
1.0
4.4
3.7
-
-
-
-
-
0.1
0.4
1.0
V
V
V
V
A
input leakage current
V
I
= V
CC
or GND; V
CC
= 5.5 V
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 27 December 2012
4 of 16
NXP Semiconductors
74HC1G14; 74HCT1G14
Inverting Schmitt trigger
Table 7.
Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
= 25
C.
Symbol
I
CC
I
CC
C
I
V
T+
Parameter
supply current
additional supply
current
input capacitance
positive-going
threshold voltage
see
Figure 7
and
Figure 8
V
CC
= 4.5 V
V
CC
= 5.5 V
V
T
negative-going
threshold voltage
see
Figure 7
and
Figure 8
V
CC
= 4.5 V
V
CC
= 5.5 V
V
H
hysteresis voltage
see
Figure 7
and
Figure 8
V
CC
= 4.5 V
V
CC
= 5.5 V
0.4
0.4
0.80
0.90
-
-
0.4
0.4
-
-
V
V
0.5
0.6
0.76
0.90
1.2
1.4
0.5
0.6
1.2
1.4
V
V
1.2
1.4
1.55
1.80
1.9
2.1
1.2
1.4
1.9
2.1
V
V
Conditions
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
per input; V
CC
= 4.5 V to 5.5 V;
V
I
= V
CC
2.1 V; I
O
= 0 A
40 C
to +85
C
Min
-
-
-
Typ
-
-
1.5
Max
10
500
-
40 C
to +125
C
Min
-
-
-
Max
20
850
-
A
A
pF
Unit
12. Dynamic characteristics
Table 8.
Dynamic characteristics
GND = 0 V; t
r
= t
f
6.0 ns; All typical values are measured at T
amb
= 25
C. For test circuit see
Figure 6
Symbol Parameter
For type 74HC1G14
t
pd
propagation delay A to Y; see
Figure 5
V
CC
= 2.0 V; C
L
= 50 pF
V
CC
= 4.5 V; C
L
= 50 pF
V
CC
= 5.0 V; C
L
= 15 pF
V
CC
= 6.0 V; C
L
= 50 pF
C
PD
power dissipation V
I
= GND to V
CC
capacitance
propagation delay A to Y; see
Figure 5
V
CC
= 4.5 V; C
L
= 50 pF
V
CC
= 5.0 V; C
L
= 15 pF
C
PD
power dissipation V
I
= GND to V
CC
1.5 V
capacitance
t
pd
is the same as t
PLH
and t
PHL
.
C
PD
is used to determine the dynamic power dissipation P
D
(W).
P
D
= C
PD
V
CC2
f
i
+
(C
L
V
CC2
f
o
) where:
f
i
= input frequency in MHz; f
o
= output frequency in MHz
C
L
= output load capacitance in pF; V
CC
= supply voltage in Volts
(C
L
V
CC2
f
o
) = sum of outputs
74HC_HCT1G14
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Conditions
40 C
to +85
C
Min
[1]
40 C
to +125
C
Unit
Min
Max
Typ
Max
-
-
-
-
[2]
25
12
10
11
20
155
31
-
26
-
-
-
-
-
-
190
38
-
32
-
ns
ns
ns
ns
pF
-
For type 74HCT1G14
t
pd
[1]
-
-
[2]
17
15
22
43
-
-
-
-
-
51
-
-
ns
ns
pF
-
[1]
[2]
Product data sheet
Rev. 6 — 27 December 2012
5 of 16
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
