UMG4N
DUAL NPN PRE-BIASED TRANSISTOR
Features
•
•
•
•
•
Epitaxial Planar Die Construction
Surface Mount Package Suited for Automated Assembly
Simplifies Circuit Design and Reduces Board Space
Lead Free/RoHS Compliant (Note 1)
"Green" Device (Note 2)
SOT-353
3
2
1
(3)
R1
(2)
(1)
R1
NEW PRODUCT
Mechanical Data
•
•
•
•
•
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•
Case: SOT-353
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed Over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.006 grams (approximate)
4
5
(4)
(5)
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
50
50
5
100
Unit
V
V
V
mA
Characteristic
Thermal Characteristics
Characteristic
Power Dissipation @T
A
= 25°C (Note 3)
Thermal Resistance, Junction to Ambient Air @T
A
= 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
j
, T
STG
Value
150
833
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
DC Current Gain
Gain-Bandwidth Product (Note 4)
Input Resistance
Notes:
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
f
T
R
1
Min
50
50
5.0
⎯
⎯
⎯
100
⎯
7
Typ
⎯
⎯
⎯
⎯
⎯
⎯
330
250
10
Max
⎯
⎯
⎯
0.5
0.5
0.3
600
⎯
13
Unit
V
V
V
μA
μA
V
⎯
MHz
kΩ
Test Condition
I
C
= 50μA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 50μA, I
C
= 0
V
CB
= 50V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 10mA, I
B
= 1mA
V
CE
= 5V, I
C
= 1mA
V
CE
= 10V, I
E
= -5mA, f = 100MHz
⎯
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
4. Characteristics of transistor. For reference only.
DS31207 Rev. 3 - 2
1 of 3
www.diodes.com
UMG4N
© Diodes Incorporated
Package Outline Dimensions
A
SOT-353
Dim
A
Min
0.10
1.15
2.00
0.30
1.80
⎯
0.90
0.25
0.10
0°
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
8°
TOP VIEW
B C
B
C
D
F
NEW PRODUCT
0.65 Nominal
H
K
M
H
J
K
L
M
D
F
L
J
α
All Dimensions in mm
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS31207 Rev. 3 - 2
3 of 3
www.diodes.com
UMG4N
© Diodes Incorporated
Microchip MCU
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