IRFB16N60L, SiHFB16N60L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
100
30
46
Single
D
FEATURES
600
0.385
• Super Fast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
• Lower Gate Charge Results in Simpler Drive
Requirements
Available
RoHS*
COMPLIANT
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
• Lead (Pb)-free Available
TO-220
APPLICATIONS
G
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
S
N-Channel
MOSFET
S
G
D
• Uninterruptible Power Supplies
• Motor Control Applications
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRFB16N60LPbF
SiHFB16N60L-E3
IRFB16N60L
SiHFB16N60L
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b
Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
LIMIT
600
± 30
16
10
60
2.5
310
16
31
310
11
- 55 to + 150
300
d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
T
C
= 25 °C
for 10 s
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12).
b. Starting T
J
= 25 °C, L = 2.5 mH, R
G
= 25
Ω,
I
AS
=16 A (see fig. 14a).
c. I
SD
≤
16 A, dI/dt
≤
650 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91097
S09-0062-Rev. A, 02-Feb-09
www.vishay.com
1
IRFB16N60L, SiHFB16N60L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJC
TYP.
-
-
MAX.
62
0.4
UNIT
°C/W
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Current
Current
a
I
S
I
SM
V
SD
t
rr
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 30 V
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 9.0 A
b
V
DS
= 50 V, I
D
= 9.0 A
600
-
3.0
-
-
-
-
8.3
-
0.39
-
-
-
-
0.385
-
-
-
5.0
± 100
50
2.0
0.460
-
V
V/°C
V
nA
µA
mA
Ω
S
C
iss
C
oss
C
rss
C
oss
eff.
C
oss
eff. (ER)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
-
2720
26
20
120
100
-
-
-
20
44
28
5.5
-
-
-
-
-
100
30
46
-
-
-
-
ns
nC
pF
V
GS
= 0 V
V
DS
= 0 V to 480 V
c
-
-
I
D
= 16 A, V
DS
= 480 V,
see fig. 7 and 15
b
V
GS
= 10 V
V
DD
= 300 V, I
D
= 16 A,
R
G
= 1.8
Ω,
see fig. 11a and 11b
b
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
130
240
450
1080
5.8
16
A
60
1.5
200
360
670
1620
8.7
V
ns
G
S
T
J
= 25 °C, I
S
= 16 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 16 A,
T
J
= 125 °C, dI/dt = 100 A/µs
b
T
J
= 25 °C, I
S
= 16 A,
T
J
= 125 °C, dI/dt = 100 A/µs
b
T
J
= 25 °C
Q
rr
I
RRM
nC
A
Forward Turn-On Time
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DS
.
C
oss
eff. (ER) is a fixed capacitance that stores the same energy as C
oss
whil V
DS
is rising from 0 % to 80 % V
DS
.
www.vishay.com
2
Document Number: 91097
S09-0062-Rev. A, 02-Feb-09
IRFB16N60L, SiHFB16N60L
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1000
TOP
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (Α )
100
10
BOTTOM
10
T J = 150°C
1
1
0.1
5.0V
T J = 25°C
0.1
0.01
20μs PULSE WIDTH
Tj = 25°C
0.001
0.1
1
10
100
0.01
4
6
8
VDS = 50V
20μs PULSE WIDTH
10
12
14
16
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
VGS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
TOP
3.0
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (A)
10
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
ID = 15A
2.5
VGS = 10V
2.0
(Normalized)
5.0V
1
1.5
1.0
0.1
20μs PULSE WIDTH
Tj = 150°C
0.01
0.1
1
10
100
0.5
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
T J , Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91097
S09-0062-Rev. A, 02-Feb-09
www.vishay.com
3
IRFB16N60L, SiHFB16N60L
Vishay Siliconix
100 000
VGS , Gate-to-Source Voltage (V)
10 000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
12.0
ID= 15A
10.0
VDS= 480V
VDS= 300V
VDS= 120V
8.0
C, Capacitance(pF)
Ciss
1000
Coss
100
6.0
Crss
10
4.0
2.0
1
1
10
100
1000
0.0
0
10
20
30
40
50
60
70
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
25
100.00
ISD, Reverse Drain Current (A)
20
10.00
T J = 150°C
Energy (μJ)
15
10
1.00
T J = 25°C
5
0
0
100
200
300
400
500
600
700
VGS = 0V
0.10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
Fig. 8 - Maximum Safe Operating Area
VDS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
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Document Number: 91097
S09-0062-Rev. A, 02-Feb-09
IRFB16N60L, SiHFB16N60L
Vishay Siliconix
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
18
16
14
ID, Drain Current (A)
10000
ID, Drain-to-Source Current (A)
100
12
10
8
6
4
2
10
100μsec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
1msec
10msec
0
1000
25
50
75
100
125
150
VDS, Drain-to-Source Voltage (V)
Fig. 9 - Maximum Safe Operating Area
T C , Case Temperature (°C)
Fig. 10 - Maximum Darin Current vs. Case Temperature
V
DS
V
GS
R
G
R
D
V
DS
90
%
D.U.T.
+
-
V
DD
10
V
Pulse
width
≤
1
µs
Duty factor
≤
0.1
%
10
%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 11a - Switching Time Test Circuit
Fig. 11b - Switching Time Waveforms
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
P
DM
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty factor D =
2. Peak T
t
1
/ t
2
t
1
t
2
J
= P
DM
x Z
thJC
+T
C
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91097
S09-0062-Rev. A, 02-Feb-09
www.vishay.com
5
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