SSM3K315T
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
SSM3K315T
○
High-Speed Switching Applications
•
•
4.5-V drive
Low ON-resistance : R
on
= 41.5 mΩ (max) (@V
GS
= 4.5 V)
: R
on
= 27.6 mΩ (max) (@V
GS
= 10 V)
Unit: mm
+0.2
2.8-0.3
+0.2
1.6-0.1
0.4±0.1
３
0.15
Absolute Maximum Ratings
(Ta = 25°C)
2.9±0.2
0.95
0.95
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
DC
Pulse
I
D
V
DSS
V
GSS
(Note 1)
I
DP
(Note 1)
P
D
(Note 1)
t = 10 s
T
ch
T
stg
30
±20
6.0
12.0
700
1250
150
−55
to 150
V
V
A
mW
°C
°C
1.9±0.2
Characteristic
Symbol
Rating
Unit
１
２
0.7±0.05
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The junction temperature should not exceed 150°C during use.
Note 2: Mounted on an FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm
2
)
1: Gate
TSM
JEDEC
JEITA
TOSHIBA
2: Source
3: Drain
―
―
2-3S1A
Weight: 10 mg (typ.)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
Symbol
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
⏐Y
fs
⏐
R
DS (ON)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
on
t
off
V
DSF
V
DD
=
15 V, I
D
=
2.0 A,
V
GS
=
0 to 4.5 V, R
G
=
10
Ω
I
D
=
-6.0 A, V
GS
=
0 V
(Note 3)
V
DS
= 15 V, I
D
=6.0 A, V
GS
= 10 V
V
DS
=
15 V, V
GS
=
0 V, f
=
1 MHz
Test Conditions
I
D
=
10 mA, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
-20 V
V
DS
=
30 V, V
GS
=
0 V
V
GS
= ±
20 V, V
DS
=
0 V
V
DS
=
5 V, I
D
=
1 mA
V
DS
=
5 V, I
D
=
4 A
I
D
=
4.0 A, V
GS
=
10 V
I
D
=
2.0 A, V
GS
=
4.5 V
(Note 3)
(Note 3)
(Note 3)
Min
30
15
⎯
⎯
1.3
11.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
23.0
20.5
27.0
450
120
77
10.1
7.6
2.5
21
15
-0.85
Max
⎯
⎯
1
±0.1
2.5
⎯
27.6
41.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1.2
ns
V
nC
pF
Unit
V
μA
μA
V
S
mΩ
Drain-Source forward voltage
Note 3: Pulse test
Start of commercial production
0½0.1
2008-09
1
2014-03-01
0.16±0.05
SSM3K315T
Switching Time Test Circuit
(a) Test Circuit
(b) V
IN
OUT
IN
R
G
4.5 V
10%
90%
4.5 V
0
10
μs
0V
(c) V
OUT
V
DD
V
DD
10%
90%
t
r
t
on
t
f
t
off
V
DD
=
15 V
R
G
=
10
Ω
Duty
≤
1%
V
IN
: t
r
, t
f
<
5 ns
Common Source
Ta
=
25°C
V
DS (ON)
Marking
3
Equivalent Circuit
(top view)
3
KDS
1
2
1
2
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Usage Consideration
Let V
th
be the voltage applied between gate and source that causes the drain current (I
D
) to be low (1 mA for the
SSM3K315T). Then, for normal switching operation, V
GS(on)
must be higher than V
th,
and V
GS(off)
must be lower than
V
th.
This relationship can be expressed as: V
GS(off)
< V
th
< V
GS(on).
Take this into consideration when using the device
2
2014-03-01
SSM3K315T
I
D
– V
DS
12
10 V
4.5 V
4.0 V
100
3.5 V
10
Common Source
VDS
=
5 V
I
D
– V
GS
(A)
I
D
8
I
D
Drain current
(A)
10
1
Drain current
6
VGS = 3.0 V
0.1
Ta
=
100 °C
25 °C
4
0.01
2
Common Source
Ta
=
25 °C
0
0.2
0.4
0.6
0.8
1.0
0.001
−
25 °C
0
0.0001
0
2.0
4.0
Drain–source voltage
V
DS
(V)
Gate–source voltage
V
GS
(V)
R
DS (ON)
– V
GS
100
ID
=4.0
A
Common Source
100
Common Source
Ta
=
25°C
R
DS (ON)
– I
D
Drain–source ON-resistance
R
DS (ON)
(mΩ)
Drain–source ON-resistance
R
DS (ON)
(mΩ)
50
50
25 °C
Ta
=
100 °C
4.5 V
V
GS
= 10 V
−
25 °C
0
0
0
0
10
20
2
4
6
8
10
12.
Gate–source voltage
V
GS
(V)
Drain current
I
D
(A)
R
DS (ON)
– Ta
100
Common Source
2.0
V
th
– Ta
Common Source
VDS
=
5 V
ID
=
1 mA
Drain–source ON-resistance
R
DS (ON)
(mΩ)
Gate threshold voltage
V
th
(V)
50
2.0 A / 4.5 V
1.0
ID
=
4.0 A / VGS
=
10 V
0
−50
0
−50
0
50
100
150
0
50
100
150
Ambient temperature
Ta
(°C)
Ambient temperature
Ta
(°C)
3
2014-03-01
SSM3K315T
|Y
fs
| – I
D
(S)
100
Common Source
VDS
=
5 V
30
Ta
=
25 °C
10
3
1
0.3
0.1
0.03
0.01
0.001
100
Common Source
VGS
=
0 V
D
G
1
I
DR
I
DR
– V
DS
⎪Y
fs
⎪
(A)
Drain reverse current
I
DR
10
Forward transfer admittance
S
−25
°C
0.1
100 °C
0.01
25 °C
0.01
0.1
1
10
100
0.001
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
Drain current
I
D
(A)
Drain–source voltage
V
DS
(V)
1000
C – V
DS
1000
toff
t – I
D
Common Source
VDD
=
15 V
VGS
=
0 to 4.5 V
Ta
=
25 °C
RG
=
10
Ω
(pF)
300
(ns)
Ciss
tf
100
C
Capacitance
100
Coss
Crss
Switching time
t
ton
10
tr
30
10
0.1
Common Source
Ta
=
25 °C
f
=
1 MHz
VGS
=
0 V
1
10
100
1
0.01
0.1
1
10
100
Drain–source voltage
V
DS
(V)
Drain current
I
D
(A)
Dynamic Input Characteristic
10
Common Source
ID
=
6.0A
Ta
=
25°C
(V)
V
GS
Gate–source voltage
8
6
VDD=15 V
VDD=24 V
4
2
0
0
5
10
15
Total Gate Charge
Qg
(nC)
4
2014-03-01
SSM3K315T
R
th
1000
–
t
w
1000
b
P
D
– T
a
Drain power dissipation P
D
(mW)
a: Mounted on FR4 Board
(25.4mm × 25.4mm × 1.6mm ,
Cu Pad : 645 mm
2
)
b: Mounted on FR4 Board
(25.4mm × 25.4mm × 1.6mm ,
Cu Pad : 0.8 mm
2
×3)
Transient thermal impedance Rth (°C/W)
800
a
100
a
600
400
b
10
a: Mounted on FR4 Board
(25.4mm × 25.4mm × 1.6mm ,
Cu Pad : 645 mm
2
)
b: Mounted on FR4 Board
(25.4mm × 25.4mm × 1.6mm ,
2
Cu Pad : 0.8 mm ×3)
0.01
0.1
1
10
100
1000
200
1
0.001
0
-40
-20
0
20
40
60
80
100
120 140 160
Pulse width
t
w
(s)
Ambient temperature
Ta
(°C)
5
2014-03-01
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