IRF6618/IRF6618TR1
RoHS compliant containing no lead or bromide
l
Application Specific MOSFETs
l
Ideal for CPU Core DC-DC Converters
l
Low Conduction Losses
l
Low Switching Losses
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible
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Compatible with existing Surface Mount
Techniques
l
PD - 94726H
HEXFET
®
Power MOSFET
V
DSS
30V
R
DS(on)
max
2.2mΩ@V
GS
= 10V
3.4mΩ@V
GS
= 4.5V
Qg
43 nC
MT
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
DirectFET ISOMETRIC
SQ
SX
ST
MQ
MX
MT
Description
The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6618 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation
of processors operating at higher frequencies. The IRF6618 has been optimized for parameters that are critical in synchronous buck
converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6618 offers particularly low Rds(on) and high Cdv/
dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
30
±20
170
30
24
240
2.8
1.8
89
0.022
-40 to + 150
Units
V
A
g
g
W
W/°C
°C
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Avalanche Characteristics
E
AS
I
AR
Thermal Resistance
R
θ
JA
R
θJA
R
θJA
R
θ
JC
R
θJ-PCB
Ã
d
Typ.
–––
–––
Max.
210
24
Units
mJ
A
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Parameter
i
fj
g
h
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
°C/W
Junction-to-PCB Mounted
Notes
through
are on page 9
www.irf.com
1
11/16/05
IRF6618/IRF6618TR1
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
23
1.7
–––
1.64
-5.7
–––
–––
–––
–––
–––
–––
43
12
4.0
15
12
19
28
1.0
21
71
27
8.1
5640
1260
570
–––
–––
2.2
Conditions
V V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 30A
V
GS
= 4.5V, I
D
3.4
2.35
V V
DS
= V
GS
, I
D
= 250µA
––– mV/°C
5.0
1.0
150
100
-100
–––
65
–––
–––
23
–––
–––
–––
2.2
–––
–––
–––
–––
–––
–––
–––
µA
nA
S
e
= 24A
e
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 24A
V
DS
= 15V
V
GS
= 4.5V
I
D
= 24A
See Fig. 16
nC
nC
Ω
V
DS
= 15V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 24A
Ãe
ns
Clamped Inductive Load
V
GS
= 0V
pF
V
DS
= 15V
ƒ = 1.0MHz
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
0.78
43
46
89
A
240
1.2
65
69
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 24A, V
GS
= 0V
T
J
= 25°C, I
F
= 24A
di/dt = 100A/µs
e
e
2
www.irf.com
IRF6618/IRF6618TR1
1000
TOP
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
1000
TOP
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
2.7V
2.7V
10
≤
60µs PULSE WIDTH
1
0.1
1
Tj = 25°C
≤
60µs PULSE WIDTH
10
Tj = 150°C
0.1
1
10
100
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
1.5
100
T J = 150°C
10
T J = 25°C
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α)
ID = 30A
VGS = 10V
1.0
1
VDS = 10V
≤60µs
PULSE WIDTH
0.1
1.5
2.0
2.5
3.0
3.5
4.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 4.
Normalized On-Resistance vs. Temperature
6.0
ID= 24A
VGS, Gate-to-Source Voltage (V)
5.0
4.0
3.0
2.0
1.0
0.0
VDS= 24V
VDS= 15V
C, Capacitance(pF)
10000
Ciss
Coss
1000
Crss
100
1
10
100
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
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3
IRF6618/IRF6618TR1
1000.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100.00
T J = 150°C
100
100µsec
10.00
1.00
T J = 25°C
10
T C = 25°C
1msec
Tj = 150°C
Single Pulse
VGS = 0V
0.10
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
1
0
1
10
10msec
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
180
VGS(th) Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
2.5
160
140
ID, Drain Current (A)
2.0
120
100
80
60
40
20
0
25
50
75
100
125
150
T C , Case Temperature (°C)
1.5
ID = 250µA
1.0
0.5
0.0
-75
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
100
Fig 10.
Threshold Voltage vs. Temperature
10
Thermal Response ( Z thJA )
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
A
τ
1
τ
2
τ
3
τ
4
τ
4
τ
A
0.1
Ri (°C/W)
0.6784
17.299
17.566
9.4701
τi
(sec)
0.00086
0.57756
8.94
106
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci=
τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
0.0001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF6618/IRF6618TR1
RDS(on), Drain-to -Source On Resistance (m
Ω)
6
900
EAS , Single Pulse Avalanche Energy (mJ)
ID = 30A
5
4
3
2
1
0
2
3
4
5
6
7
8
9
10
T J = 25°C
T J = 125°C
800
700
600
500
400
300
200
100
0
25
50
75
ID
TOP
9.3A
11A
BOTTOM 24A
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy
vs. Drain Current
Current Regulator
Same Type as D.U.T.
V
(BR)DSS
15V
tp
12V
.2µF
DRIVER
50KΩ
.3µF
VDS
L
D.U.T.
RG
20V
VGS
+
V
-
DS
D.U.T
IAS
tp
+
- VDD
A
V
GS
0.01
Ω
I
AS
3mA
I
G
I
D
Current Sampling Resistors
Fig 14.
Unclamped Inductive Test Circuit
and Waveform
L
D
V
DS
Fig 15.
Gate Charge Test Circuit
+
V
DD
-
D.U.T
V
GS
Pulse Width < 1µs
Duty Factor < 0.1%
90%
V
DS
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 16.
Switching Time Test Circuit
Fig 17.
Switching Time Waveforms
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