IRF7820PbF
HEXFET
®
Power MOSFET
Applications
l
Synchronous MOSFET for Notebook
Processor Power
l
Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
Benefits
l
Very Low R
DS(on)
at 10V V
GS
l
Low Gate Charge
l
Fully Characterized Avalanche Voltage
and Current
l
20V V
GS
Max. Gate Rating
V
DSS
R
DS(on)
max
Qg (typ.)
29nC
200V 78m @V
GS
= 10V
S
S
S
G
1
2
3
4
8
7
A
A
D
D
D
D
6
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
200
± 20
3.7
2.9
29
2.5
1.6
0.02
-55 to + 150
Units
V
f
Power Dissipation
f
Power Dissipation
c
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R
JL
R
JA
Junction-to-Drain Lead
Junction-to-Ambient
f
g
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 9
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1
07/24/2012
IRF7820PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
V
DSS
/ T
J
R
DS(on)
V
GS(th)
V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gs
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min.
200
–––
–––
3.0
–––
–––
–––
–––
–––
5.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
0.23
62.5
4.0
-12
–––
–––
–––
–––
–––
29
8.6
1.5
10.1
8.7
10.2
10.2
30
0.73
7.1
3.2
14
12
1750
90
25
Conditions
–––
V
V
GS
= 0V, I
D
= 250μA
–––
V/°C Reference to 25°C, I
D
= 1mA
78
m V
GS
= 10V, I
D
= 2.2A
5.0
V
V
DS
= V
GS
, I
D
= 100μA
––– mV/°C
20
V
DS
= 200V, V
GS
= 0V
μA
V
DS
= 200V, V
GS
= 0V, T
J
= 125°C
250
V
GS
= 20V
100
nA
-100
V
GS
= -20V
V
DS
= 50V, I
D
= 2.2A
–––
S
44
V
DS
= 100V
–––
V
GS
= 10V
–––
–––
nC I
D
= 2.2A
–––
See Figs. 6, 16a & 16b
–––
–––
–––
nC V
DS
= 20V, V
GS
= 0V
–––
–––
V
DD
= 200V, V
GS
= 10V
–––
I
D
= 2.2A
ns
–––
R
G
= 1.8
–––
See Figs. 15a & 15b
–––
V
GS
= 0V
–––
pF V
DS
= 100V
–––
ƒ = 1.0MHz
e
e
Avalanche Characteristics
E
AS
I
AR
d
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
Max.
606
2.8
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Typ. Max. Units
–––
–––
–––
33
213
1.5
A
29
1.3
50
320
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 2.2A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.2A, V
DD
= 100V
di/dt = 500A/μs
Ã
e
e
2
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IRF7820PbF
1000
TOP
VGS
15V
10V
7.0V
6.25V
6.0V
5.75V
5.5V
5.25V
100
TOP
VGS
15V
10V
7.0V
6.25V
6.0V
5.75V
5.5V
5.25V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
10
BOTTOM
10
BOTTOM
5.25V
1
5.25V
1
0.1
60μs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
0.1
0.1
1
60μs PULSE WIDTH
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
VDS = 50V
60μs
PULSE WIDTH
ID, Drain-to-Source Current (A)
2.0
ID = 3.7A
VGS = 10V
10
T J = 150°C
1
T J = 25°C
1.5
1.0
0.5
0.1
4
4
5
5
6
6
7
7
0.0
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRF7820PbF
100000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
14.0
ID= 2.2A
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 160V
VDS= 100V
VDS= 40V
10000
C, Capacitance (pF)
Ciss
1000
Coss
100
Crss
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
10
20
30
40
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100μsec
1msec
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10
10
T J = 150°C
10msec
1
DC
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.1
1
10
100
1000
T J = 25°C
1
VGS = 0V
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7820PbF
4
VGS(th) , Gate threshold Voltage (V)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
ID = 100μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
ID, Drain Current (A)
3
2
1
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
Fig 10.
Threshold Voltage vs. Temperature
100
Thermal Response ( Z thJA ) °C/W
10
1
0.1
0.01
0.001
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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