HIGH-SPEED
16K X 9 DUAL-PORT
STATIC RAM
Features
◆
◆
◆
IDT7016S/L
◆
True Dual-Ported memory cells which allow simulta-
neous reads of the same memory location
High-speed access
– Commercial:12/15/20/25/35ns (max.)
– Industrial: 20ns (max.)
– Military: 20/25/35ns (max.)
Low-power operation
– IDT7016S
Active: 750mW (typ.)
Standby: 5mW (typ.)
– IDT7016L
Active: 750mW (typ.)
Standby: 1mW (typ.)
◆
◆
◆
◆
◆
◆
◆
◆
◆
IDT7016 easily expands data bus width to 18 bits or
more using the Master/Slave select when cascading
more than one device
M/S = V
IH
for
BUSY
output flag on Master
M/S = V
IL
for
BUSY
input on Slave
Busy and Interrupt Flag
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
TTL-compatible, single 5V (±10%) power supply
Available in ceramic 68-pin PGA, 68-pin PLCC, and an
80-pin TQFP
Industrial temperature range (–40°C to +85°C) is
available for selected speeds
Green parts available, see ordering information
Functional Block Diagram
OE
L
CE
L
R/W
L
OE
R
CE
R
R/W
R
I/O
0L
- I/O
8L
I/O
Control
BUSY
L
A
13L
A
0L
(1,2)
I/O
0R
-I/O
8R
I/O
Control
BUSY
R
Address
Decoder
14
(1,2)
MEMORY
ARRAY
14
Address
Decoder
A
13R
A
0R
CE
L
OE
L
R/W
L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
CE
R
OE
R
R/W
R
SEM
L
(2)
INT
L
NOTES:
1. In MASTER mode:
BUSY
is an output and is a push-pull driver
In SLAVE mode:
BUSY
is input.
2.
BUSY
outputs and
INT
outputs are non-tri-stated push-pull drivers.
M/S
3190 drw 01
SEM
R
(2)
INT
R
OCTOBER 2014
1
DSC 3190/11
©2014 Integrated Device Technology, Inc.
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Description
The IDT7016 is a high-speed 16K x 9 Dual-Port Static RAM. The
IDT7016 is designed to be used as stand-alone Dual-Port RAMs or
as a combination MASTER/SLAVE Dual-Port RAM for 18-bit-or-
more wider systems. Using the IDT MASTER/SLAVE Dual-Port
RAM approach in 18-bit or wider memory system applications
results in full-speed, error-free operation without the need for addi-
tional discrete logic.
This device provides two independent ports with separate con-
trol, address, and I/O pins that permit independent, asynchronous
Pin Configurations
(1,2,3)
access for reads or writes to any location in memory. An automatic
power down feature controlled by
CE
permits the on-chip circuitry of
each port to enter a very low standby power mode.
Fabricated using IDT’s CMOS high-performance technology,
these devices typically operate on only 750mW of power.
The IDT7016 is packaged in a ceramic 68-pin PGA, a 64-pin
PLCC and an 80-pinTQFP (Thin Quad Flatpack). Military grade
product is manufactured in compliance with the latest revision of
MIL-PRF-38535 QML, making it ideally suited to military tempera-
ture applications demanding the highest level of performance and
reliability.
Pin Names
NOTES:
1. All V
CC
pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. Package body is approximately .95 in x .95 in x .17 in.
4. This package code is used to reference the package diagram.
5. This text does not imply orientation of Part-marking.
Left Port
CE
L
R/W
L
OE
L
A
0L
- A
13L
I/O
0L
- I/O
8L
SEM
L
INT
L
BUSY
L
CE
R
Right Port
Chip Enable
Names
R/W
R
OE
R
A
0R
- A
13R
I/O
0R
- I/O
8R
SEM
R
INT
R
BUSY
R
M/S
V
CC
GND
Read/Write Enable
Output Enable
Address
Data Input/Output
Semaphore Enable
Interrupt Flag
Busy Flag
Master or Slave Select
Power
Ground
3190 tbl 01
2
6.42
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Pin Configurations
(1,2,3)
(con't.)
NOTES:
1. All V
CC
pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. PN80-1 package body is approximately
14mm x 14mm x 1.4mm.
G68-1 package body is approximately
1.18 in x 1.18 in x .16 in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
6.42
3
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Truth Table I: Non-Contention Read/Write Control
Inputs
(1)
CE
H
L
L
X
R/W
X
L
H
X
OE
X
X
L
H
SEM
H
H
H
X
Outputs
I/O
0-8
High-Z
DATA
IN
DATA
OUT
High-Z
Deselcted: Power-Down
Write to Memory
Read Memory
Outputs Disabled
3190 tbl 02
Mode
NOTE:
1.
Condition: A
0L
— A
13L
≠
A
0R
— A
13R
Truth Table II: Semaphore Read/Write Control
(1)
Inputs
CE
H
H
L
R/W
H
↑
X
OE
L
X
X
SEM
L
L
L
Outputs
I/O
0-8
DATA
OUT
DATA
IN
____
Mode
Read Semaphore Flag Data Out (I/O
0
- I/O
8
)
Write I/O
0
into Semaphore Flag
Not Allowed
3190 tbl 03
NOTE:
1. There are eight semaphore flags written to via I/O
0
and read from all I/O
s
(I/O
0
-I/O
8
). These eight semaphores are addressed by A
0
- A
2.
Absolute Maximum Ratings
(1)
Symbol
V
TERM
(2)
Rating
Terminal Voltage
with Respect
to GND
Temperature
Under Bias
Storage
Temperature
DC Output
Current
Commercial
& Industrial
-0.5 to +7.0
Military
-0.5 to +7.0
Unit
V
Maximum Operating
Temperature and Supply Volt-
age
(1)
Grade
Ambient
GND
Vcc
Temperature
Military
-55
O
C to +125
O
C
0
O
C to +70
O
C
-40
O
C to +85
O
C
0V
0V
0V
5.0V
+
10%
5.0V
+
10%
5.0V
+
10%
3190 tbl 05
T
BIAS
T
STG
I
OUT
-55 to +125
-65 to +150
50
-65 to +135
-65 to +150
50
o
C
C
Commercial
Industrial
o
mA
3190 tbl 04
NOTES:
1. This is the parameter T
A
. This is the "instant on" case temperature.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
2. V
TERM
must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns maximum,
and is limited to < 20mA for the period of V
TERM
> Vcc + 10%.
Recommended DC Operating
Conditions
Symbol
V
CC
GND
V
IH
V
IL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
4.5
0
2.2
-0.5
(1)
Typ.
5.0
0
____
____
Max.
5.5
0
6.0
(2)
0.8
Unit
V
V
V
V
3190 tbl 06
NOTES:
1. V
IL
> -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 10%.
4
6.42
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Capacitance
(1)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
(T
A
= +25°C, f = 1.0mhz, for TQFP ONLY)
Conditions
(2)
V
IN
= 3dV
V
OUT
= 3dV
Max.
9
10
Unit
pF
pF
3190 tbl 07
Output Capacitance
NOTES:
1. This parameter is determined by device characteristics but is not production tested.
2. 3dV references the interpolated capacitance when the input and output signals switch
from 0V to 3V or from 3V to 0V .
DC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Input Leakage Current
(1)
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V
CC
= 5.5V, V
IN
= 0V to V
CC
CE
= V
IH
, V
OUT
= 0V to V
CC
I
OL
= +4mA
I
OH
= -4mA
Min.
___
___
___
(V
CC
= 5.0V ± 10%)
7016L
Max.
10
10
0.4
___
7016S
Min.
___
___
___
Max.
5
5
0.4
___
Unit
µA
µA
V
V
3190 tbl 08
2.4
2.4
NOTE:
1. At Vcc < 2.0V, Input leakages are undefined.
Output Loads and AC Test
Conditions
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
3ns Max.
1.5V
1.5V
Figures 1 and 2
3190 tbl 09
5V
893Ω
DATA
OUT
BUSY
INT
347Ω
30pF
DATA
OUT
347Ω
5V
893Ω
5pF*
,
3190 drw 06
Figure 1. AC Output Test Load
Figure 2. Output Test Load
(for t
LZ
, t
HZ
, t
WZ
, t
OW
)
*Including scope and jig.
6.42
5
Microchip MCU
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