Freescale Semiconductor
Technical Data
Document Number: MW5IC970NBR1
Rev. 1, 5/2006
RF LDMOS Wideband 2 - Stage
Power Amplifiers
Designed for broadband commercial and industrial applications with frequen-
cies from 132 MHz to 960 MHz. The high gain and broadband performance of
this device make it ideal for large - signal, common - source amplifier applica-
tions in 28 volt base station equipment. The device has a 2 - stage design with
off - chip matching for the input, interstage and output networks to cover the
desired frequency band.
•
Typical Performance: 800 MHz, 28 Volts, I
DQ1
= 80 mA,
I
DQ2
= 650 mA, P
out
= 70 Watts PEP
Power Gain — 30 dB
Drain Efficiency — 48%
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 850 MHz, 70 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
•
On - Chip Current Mirror g
m
Reference FET for Self Biasing Application
(1)
•
Integrated ESD Protection
•
200°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MW5IC970NBR1
800 - 900 MHz, 70 W, 28 V
RF LDMOS WIDEBAND
2 - STAGE POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
V
RD2
V
RG2
/V
GS2
Quiescent Current
Temperature Compensation
V
RG1
/V
GS1
GND
V
RD2
V
RG2
/V
GS2
V
RG1
/V
GS1
RF
in1
GND
V
D2
/RF
out2
V
RD1
V
D1
/RF
out1
V
D1
/RF
out1
RF
in2
GND
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
NC
14
V
D2/
RF
out2
RF
in1
V
RD1
V
D1
/RF
out1
V
D1
/RF
out1
RF
in2
13
12
NC
GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MW5IC970NBR1
1
RF Device Data
Freescale Semiconductor
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
T
stg
T
J
Value
- 0.5, + 65
- 0.5, + 15
- 65 to +200
200
Unit
Vdc
Vdc
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Final Application
(P
out
= 70 W CW)
EDGE Application
(P
out
= 35 W CW)
Stage 1, 28 Vdc, I
DQ
= 80 mA
Stage 2, 28 Vdc, I
DQ
= 650 mA
Stage 1, 28 Vdc, I
DQ
= 80 mA
Stage 2, 28 Vdc, I
DQ
= 650 mA
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Symbol
R
θJC
5.2
0.8
5.3
0.8
Value
(1)
Unit
°C/W
Table 3. ESD Protection Characteristics
Class
1A (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28.5 Vdc, I
DQ1
= 80 mA, I
DQ2
= 650 mA, P
out
= 70 W PEP,
f1 = 870.0 MHz, f2 = 870.1 MHz
Power Gain
Drain Efficiency
Input Return Loss
Intermodulation Distortion
G
ps
η
D
IRL
IMD
26.5
40
—
—
30
48
- 12
- 33
34.5
—
- 10
- 28
dB
%
dB
dBc
Typical 800/900 MHz Performances
(In Freescale 800/900 MHz Reference Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 80 mA, I
DQ2
=
650 mA, 740 - 870 MHz, 870 - 960 MHz
Gain Flatness in 30 MHz Bandwidth @ P
out
= 70 W CW
Gain Flatness in 30 MHz Instantaneous Bandwidth
@ P
out
= 70 W CW
Delay @ P
out
= 70 W CW Including Output Matching
Part - to - Part Phase Variation @ P
out
= 70 W CW
G
F
G
F
Delay
ΔΦ
—
—
—
—
2
0.2
4.5
±15
—
—
—
—
dB
dB
ns
°
1. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW5IC970NBR1
2
RF Device Data
Freescale Semiconductor
V
BIAS
V
D2
R6
F1
R4
R5
R3
R7
R2
C18
C16
R1
RF
INPUT
C15
Z1
C1
Z2
C2
C17
V
G2R2
V
G1R1
Z3
1
2
3
4
5
Z5
6
7
8
C5
Z4
11
C3
12
9
10
NC 13
C14
Z11
14
C6
C11
C13
Z10
Quiescent Current
Temperature
Compensation
16
NC 15
C8
C9
R8
Z6
C7
Z7
C10
Z8
C12
Z9
RF
OUTPUT
C4
F2
V
D1
Z1
Z2
Z3
Z4
Z5
Z6
0.485″ x 0.066″ Microstrip
0.270″ x 0.040″ Microstrip
0.068″ x 0.020″ Microstrip
0.950″ x 0.040″ Microstrip
0.131″ x 0.233″ Microstrip
0.797″ x 0.050″ Microstrip
Z7
Z8
Z9
Z10
Z11
PCB
0.040″ x 0.233″ Microstrip
0.450″ x 0.120″ Microstrip
0.100″ x 0.066″ Microstrip
1.000″ x 0.040″ Microstrip
0.148″ x 0.040″ Microstrip
Rogers 4350B, 0.030″,
ε
r
= 3.5
Figure 3. MW5IC970NBR1 Test Circuit Schematic
Table 6. MW5IC970NBR1 Test Circuit Component Designations and Values
Part
C1, C10, C11
C2
C3, C8, C14, C15, C17
C4, C9
C5
C6, C7
C12
C13
C16, C18, C19, C20
F1
F2
R1, R7
R2, R5
R3, R4, R8
R6
Description
3.9 pF Chip Capacitor
56 pF Chip Capacitor
39 pF Chip Capacitors
10
μF
Chip Capacitors
24 pF Chip Capacitor
15 pF Chip Capacitors
4.7 pF Chip Capacitor
0.4 pF Chip Capacitor
0.015
μF
Chip Capacitors
5A Surface Mount Fuse
1A Surface Mount Fuse
681
Ω,
Chip Resistors
4.75 kΩ, Chip Resistors
1.21 kΩ, Chip Resistors
267
Ω,
Chip Resistor
Part Number
600S3R9BT
600S560JW
GRM40001C0G390J050BD
ECJ4YF1H106Z
600F240JT
600F150JT
600F4R7BT
600F0R4BT
GRM400X7R153J050BD
1FT5A
1FT1A
ATC
ATC
Murata
Panasonic
ATC
ATC
ATC
ATC
Murata
Little Fuse
Little Fuse
Manufacturer
MW5IC970NBR1
RF Device Data
Freescale Semiconductor
3
V
D2
F1
V
G2
C9
R6
V
G1
C8
R8
R4
R5
R3
R2
R1
C16
C15
C7
C2
C
R7
C18
C17
C11
C13
C10
C6
C12
C1
C5
C14
C3
MW5IC970
V
D1
C4
Rev. 1
F2
Figure 4. MW5IC970NBR1 Test Circuit Component Layout
MW5IC970NBR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
60
PAE,
POWER ADDED EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
PAE
40
G
ps
20
V
DD
= 28.5 Vdc, P
out
= 35 W (Avg.)
I
DQ1
= 80 mA, I
DQ2
= 650 mA
100 kHz Tone Spacing
IRL
−20
IMD
−40
800
820
840
860
880
900
920
940
−40
960
−20
40
60
20
0
0
f, FREQUENCY (MHz)
Figure 5. Two - Tone Wideband Performance
@ P
out
= 35 Watts (Avg.)
IMD, INTERMODULATION DISTORTION (dBc)
32
I
DQ2
= 975 mA
31
G
ps
, POWER GAIN (dB)
812 mA
650 mA
30
488 mA
29
V
DD
= 28.5 Vdc, I
DQ1
= 80 mA
f1 = 870 MHz, f2 = 870.1 MHz
Two−Tone Measurements
100 kHz Tone Spacing
10
P
out
, OUTPUT POWER (WATTS) PEP
100
200
−10
−20
−30
−40
−50
5th Order
−60
−70
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
300
7th Order
V
DD
= 28.5 Vdc
I
DQ1
= 80 mA, I
DQ2
= 650 mA
f1 = 870 MHz, f2 = 870.1 MHz
Two−Tone Measurements
100 kHz Tone Spacing
IMD, INTERMODULATION DISTORTION (dBc)
IRL, INPUT RETURN LOSS (dB)
3rd Order
28
325 mA
27
1
Figure 6. Two - Tone Power Gain versus
Output Power
IMD, INTERMODULATION DISTORTION (dBc)
−20
−25
−30
3rd Order
−35
−40
−45
−50
−55
0.1
5th Order
7th Order
V
DD
= 28.5 Vdc, P
out
= 35 W (PEP)
I
DQ1
= 80 mA, I
DQ2
= 650 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 870 MHz
34
32
G
ps
, POWER GAIN (dB)
30
28
26
24
22
20
0.1
Figure 7. Intermodulation Distortion Products
versus Output Power
70
25_C 60
85_C
50
40
85_C
30
20
PAE
10
0
1000
PAE, POWER ADDED EFFICIENCY (%)
V
DD
= 28.5 Vdc, I
DQ1
= 80 mA
I
DQ2
= 650 mA, f = 870 MHz
−30_C
G
ps
T
C
= 25_C
−30_C
1
10
100
200
1
10
100
TWO−TONE SPACING (MHz)
P
out
, OUTPUT POWER (WATTS) CW
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
Figure 9. Power Gain and Power Added
Efficiency versus CW Output Power
MW5IC970NBR1
RF Device Data
Freescale Semiconductor
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
