VS-MBRS190TRPbF, VS-MBRS1100TRPbF
Vishay Semiconductors
Schottky Rectifier, 1.0 A
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
Cathode
Anode
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
SMB
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
DO-214AA (SMB)
1A
90 V, 100 V
0.78 V
1 mA at 125 °C
175 °C
Single die
1.0 mJ
DESCRIPTION
The VS-MBRS190TRPbF, VS-MBRS1100TRPbF surface
mount Schottky rectifier has been designed for applications
requiring low forward drop and very small foot prints on PC
boards. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
1.0 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
1.0
90/100
870
0.63
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBRS190TRPbF
90
VS-MBRS1100TRPbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 0.5 A, L = 8 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
TEST CONDITIONS
50 % duty cycle at T
L
= 147 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
VALUES
1.0
870
50
1.0
0.5
mJ
A
A
UNITS
Document Number: 94315
Revision: 05-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VS-MBRS190TRPbF, VS-MBRS1100TRPbF
Vishay Semiconductors
Schottky Rectifier, 1.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
See fig. 1
Maximum reverse leakage current
See fig. 2
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
SYMBOL
V
FM (1)
I
RM (1)
C
T
L
S
dV/dt
1A
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.78
0.62
0.5
1.0
42
2.0
10 000
UNITS
V
mA
pF
nH
V/μs
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device
Notes
(1)
SYMBOL
T
J (1)
, T
Stg
R
thJL (2)
R
thJA
DC operation
See fig. 4
DC operation
TEST CONDITIONS
VALUES
- 55 to 175
36
UNITS
°C
°C/W
80
0.10
0.003
g
oz.
V19/V10
Case style SMB (similar to DO-214AA)
dP
tot
1
------------ < -------------
thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
Mounted 1" square PCB
(2)
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2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94315
Revision: 05-Jul-10
VS-MBRS190TRPbF, VS-MBRS1100TRPbF
Schottky Rectifier, 1.0 A
Vishay Semiconductors
10
10
T
J
= 175 °C
I
R
- Reverse Current (mA)
I
F
- Instantaneous
Forward Current (A)
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
1
0.1
0.01
0.001
0.0001
0.00001
T
J
= 125 °C
T
J
= 150 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
0.1
0.2
0.4
0.6
0.8
1.0
0
20
40
60
80
100
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
100
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
10
0
20
40
60
80
100
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
100
10
P
DM
t
1
1
Single pulse
(thermal resistance)
0.1
0.00001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
.
0.01
0.1
1
10
100
0.0001
0.001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Document Number: 94315
Revision: 05-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VS-MBRS190TRPbF, VS-MBRS1100TRPbF
Vishay Semiconductors
180
Schottky Rectifier, 1.0 A
Allowable Case Temperature (°C)
1.0
Average Power Loss (W)
170
160
150
140
130
120
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
0.8
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
0.6
0.4
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
DC
0.2
110
0
0
0.4
0.8
1.2
1.6
0
0.3
0.6
0.9
1.2
1.5
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
I
FSM
- Non-Repetitive Surge Current (A)
1000
100
At any rated load condition
and with rated V
RRM
applied
following surge
10
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94315
Revision: 05-Jul-10
VS-MBRS190TRPbF, VS-MBRS1100TRPbF
Schottky Rectifier, 1.0 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- MBR
1
1
2
3
4
5
6
7
S
3
1
4
100
5
TR
6
PbF
7
2
-
-
-
-
-
-
-
Vishay Semiconductors product suffix
Schottky MBR series
S = SMB
Current rating (1 = 1 A)
Voltage rating
TR = Tape and reel (3000 pieces)
PbF = Lead (Pb)-free
90 = 90 V
100 = 100 V
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95017
www.vishay.com/doc?95029
www.vishay.com/doc?95034
Document Number: 94315
Revision: 05-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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