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MUN53xxDW1T1: 产品描述PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363; 产品类别半导体分立半导体; 文件大小367KB，共13页; 制造商LRC; 官网地址http://www.lrc.cn

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MUN53xxDW1T1概述

PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363

	MUN53xxDW1T1	MUN5333DW1T1	MUN5332DW1T1	MUN5331DW1T1	MUN5316DW1T1	MUN5315DW1T1	MUN5313DW1T1	MUN5312DW1T1
描述	PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363	PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363	PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363	PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363	PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363	PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363	PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363	PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363
厂商名称	-	LRC	LRC	LRC	LRC	LRC	LRC	LRC
Reach Compliance Code	-	unknow	unknow	unknow	unknown	unknow	unknow	unknow
最大集电极电流 (IC)	-	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
最小直流电流增益 (hFE)	-	80	15	8	160	160	80	60
元件数量	-	2	2	2	2	2	2	2
极性/信道类型	-	PNP	PNP	PNP	PNP	PNP	PNP	PNP
最大功率耗散 (Abs)	-	0.385 W	0.385 W	0.385 W	0.385 W	0.385 W	0.385 W	0.385 W
表面贴装	-	YES	YES	YES	YES	YES	YES	YES
晶体管元件材料	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

器件捷径: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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