HS-26C31RH-T
TM
Data Sheet
July 1999
FN4591.1
Radiation Hardened
Quad Differential Line Driver
Intersil’s Satellite Applications Flow™ (SAF) devices are fully
tested and guaranteed to 100kRAD total dose. These QML
Class T devices are processed to a standard flow intended
to meet the cost and shorter lead-time needs of large
volume satellite manufacturers, while maintaining a high
level of reliability.
The Intersil HS-26C31RH-T is a Quad Differential Line
Driver designed for digital data transmission over balanced
lines and meets the requirements of EIA Standard RS-422.
Radiation Hardened CMOS processing assures low power
consumption, high speed, and reliable operation in the most
severe radiation environments.
The HS-26C31RH-T accepts CMOS inputs and converts
them to RS-422 compatible outputs. This circuit uses special
outputs that enable the drivers to power down without
loading down the bus. Enable and disable pins allow several
devices to be connected to the same data source and
addressed independently.
Features
• QML Class T, Per MIL-PRF-38535
• Radiation Performance
- Gamma Dose . . . . . . . . . . . . . . . . . . . . 1 x 10
5
RAD(Si)
- SEU and SEL . . . . . . . . . . Immune to 100MeV/mg/cm
2
• EIA RS-422 Compatible Outputs (Except for IOS)
• CMOS Compatible Inputs
• High Impedance Outputs when Disabled or Powered
Down
• Low Power Dissipation 2.75mW Standby (Max)
• Single 5V Supply
• Low Output Impedance 10Ω or Less
• Full -55
o
C to +125
o
C Military Temperature Range
Pinouts
HS1-26C31RH-T (SBDIP), CDIP-T16
TOP VIEW
Specifications
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HS-1840ARH-T
are contained in SMD 5962-96663.
A “hot-link” is provided
from our website for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
Intersil’s Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
www.intersil.com/quality/manuals.asp
AIN
AIN 1
AO 2
AO 3
ENABLE 4
BO 5
BO 6
BIN 7
GND 8
16 V
DD
15 DIN
14 DO
13 DO
12 ENABLE
11 CO
10 CO
9 CIN
HS9-26C31RH-T (FLATPACK), CDFP4-F16
TOP VIEW
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
DD
DIN
DO
DO
ENABLE
CO
CO
CIN
Ordering Information
ORDERING
NUMBER
5962R9666301TEC
HS1-26C31RH/Proto
5962R9666301TXC
HS9-26C31RH/Proto
PART
NUMBER
HS1-26C31RH-T
HS1-26C31RH/Proto
HS9-26C31RH-T
HS9-26C31RH/Proto
TEMP.
RANGE
(
o
C)
-55 to 125
-55 to 125
-55 to 125
-55 to 125
AO
AO
ENABLE
BO
BO
BIN
GND
NOTE:
Minimum order quantity for -T is 150 units through
distribution, or 450 units direct.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil (and design) is a trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
HS-26C31RH-T
Die Characteristics
DIE DIMENSIONS:
2450µm x 4950µm x 533µm
±25.4µm
(97 x 195 x 21mils
±1mil)
METALLIZATION:
M1: Mo/Tiw
Thickness: 5800
Å
M2: Al/Si/Cu
Thickness: 10k
Å
±1k
Å
SUBSTRATE POTENTIAL:
Internally connected to V
DD.
May be left floating.
BACKSIDE FINISH:
Silicon
PASSIVATION:
Type: SiO
2
Thickness: 8k
Å
±1k
Å
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm
2
TRANSISTOR COUNT:
285
PROCESS:
Radiation Hardened CMOS, AVLSI
Metallization Mask Layout
HS-26C31RH
(16) V
DD
(16) V
DD
(15) DIN
(14) DO
(13) DO
(12) ENABLE
(11) CO
(10) CO
CIN (9)
(1) AIN
AO (2)
AO (3)
ENABLE (4)
BO (5)
BO (6)
BIN (7)
GND (8)
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
3
GND (8)
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
