STB100N10F7, STD100N10F7,
STF100N10F7, STP100N10F7
N-channel 100 V, 0.0068
Ω
typ., 80 A, STripFET™ VII DeepGATE™
Power MOSFET in D
2
PAK, DPAK, TO-220FP and TO-220
Datasheet
-
production data
Features
TAB
TAB
3
1
Order codes
STB100N10F7
V
DS
R
DS(on)
max
I
D
80 A
P
TOT
120 W
120W
30 W
150 W
3
1
DPAK
TAB
D PAK
2
STD100N10F7
100 V
STF100N10F7
STP100N10F7
0.008
Ω
80 A
45 A
80A
3
2
1
3
1
2
•
Ultra low on-resistance
•
100% avalanche tested
TO-220FP
TO-220
Figure 1. Internal schematic diagram
Applications
•
Switching applications
Description
These devices utilize the 7
th
generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest R
DS(on)
in all
packages.
Table 1. Device summary
Order codes
STB100N10F7
STD100N10F7
100N10F7
STF100N10F7
STP100N10F7
TO-220FP
TO-220
Tube
Tube
Marking
Packages
D
2
PAK
DPAK
Packaging
Tape and reel
Tape and reel
November 2013
This is information on a product in full production.
DocID023737 Rev 4
1/23
www.st.com
23
Contents
STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
.............................................. 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2/23
DocID023737 Rev 4
STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
DPAK
V
DS
V
GS
I
D
I
D
I
DM(2)
P
TOT (1)
T
J
T
stg
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Operating junction temperature
-55 to 175
Storage temperature
°C
1. This value is limited by package.
.
2. Pulse width limited by safe operating area.
TO-220FP
100
± 20
TO-220
D
2
PAK
Unit
V
V
80
70
320
150
A
A
A
W
°C
80
62
320
120
45
(1)
32
(1)
180
30
Table 3. Thermal resistance
Value
Symbol
Parameter
D
2
PAK
1
Unit
DPAK
1.25
TO-220FP
5
62.50
30
50
TO-220
1
°C/W
°C/W
°C/W
R
thj-case
R
thj-amb
R
thj-pcb (1)
Thermal resistance junction-case
Thermal resistance junction-
ambient
Thermal resistance junction-pcb
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Table 4. Avalanche characteristics
Symbol
E
AS
Parameter
Single pulse avalanche energy
(T
J
= 25 °C, L = 3.5 mH, I
AS
= 15 A, V
DD
= 50 V, V
GS
= 10 V)
Value
400
Unit
mJ
DocID023737 Rev 4
3/23
Electrical characteristics
STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7
2
Electrical characteristics
(T
CASE
=25 °C unless otherwise specified)
Table 5. On/off states
Symbol
V
(BR)DSS
Parameter
Drain-source breakdown
voltage (V
GS
= 0)
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Test conditions
I
D
= 250
μA
V
DS
= 100 V
V
DS
= 100 V; T
C
=125 °C
V
GS
= 20 V
V
DS
= V
GS
, I
D
= 250
μA
For D
2
PAK, DPAK and
TO-220
V
GS
= 10 V, I
D
= 40 A
For TO-220-FP
V
GS
= 10 V, I
D
= 22.5 A
2.5
Min.
100
Typ.
Max.
-
1
100
100
4.5
Unit
V
μA
μA
nA
V
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Static drain-source on-
resistance
0.0068
0.008
Ω
Table 6. Dynamic
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
=50 V, f=1 MHz,
V
GS
=0
Test conditions
Min.
-
-
-
V
DD
=50 V, I
D
= 80 A
V
GS
=10 V
Figure 18
-
-
-
Typ.
4369
823
36
61
26
13
Max.
-
-
-
-
-
-
Unit
pF
pF
pF
nC
nC
nC
Table 7. Switching times
Symbol
t
d(on)
t
r
t
d(off)
t
f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
=50 V, I
D
= 40 A,
R
G
=4.7
Ω,
V
GS
= 10 V
Figure 17
Test conditions
Min.
-
-
-
-
Typ.
27
40
46
15
Max.
-
-
-
-
Unit
ns
ns
ns
ns
4/23
DocID023737 Rev 4
STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7
Electrical characteristics
Table 8. Source drain diode
Symbol
I
SD
I
SDM(1)
V
SD(2)
t
rr
Q
rr
I
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 80 A, V
GS
=0
I
SD
= 80 A,
di/dt = 100 A/μs,
V
DD
=80 V, T
j
=150 °C
Test conditions
Min
-
-
-
-
-
-
77
146
4
Typ.
Max
80
320
1.2
Unit
A
A
V
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300
μs,
duty cycle 1.5%
DocID023737 Rev 4
5/23
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