Si7138DP-T1-GE3 (Lead (Pb)-free) and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
Limit
60
± 20
30
30
19.7
b, c
15.7
b, c
80
30
a
4.5
b, c
43
93
96
61.5
5.4
b, c
3.5
b, c
- 55 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
I
DM
I
S
I
AS
E
AS
P
D
A
mJ
Maximum Power Dissipation
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, f
Maximum Junction-to-Case (Drain)
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
18
1.0
Maximum
23
1.5
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73461). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
Document Number: 73530
S11-0212-Rev. C, 14-Feb-11
www.vishay.com
1
Si7138DP
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 2.7 A
0.8
45
80
30
15
T
C
= 25 °C
30
80
1.2
70
120
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, R
L
= 3
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 30 V, R
L
= 3
Ω
I
D
≅
10 A, V
GEN
= 6 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 30 V, V
GS
= 10 V, I
D
= 19.7 A
V
DS
= 30 V, V
GS
= 6 V, I
D
= 19.7 A
V
DS
= 30 V, V
GS
= 0 V, f = 1 MHz
6900
470
200
90
55
27.5
11
0.6
47
120
40
8
25
12
50
8
0.9
70
180
60
15
40
20
75
15
ns
Ω
135
83
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 1 mA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 19.7 A
V
GS
= 6 V, I
D
= 18 A
V
DS
= 15 V, I
D
= 19.7 A
30
0.0065
0.0073
84
0.0078
0.009
2
60
60.5
- 8.4
4
± 100
1
10
nA
µA
A
Ω
S
V
mV/°C
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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