4-, 6- and 8-Channel EMI Filter Arrays
with ESD Protection
CM1636
Features
•
•
•
•
•
•
Four, six and eight channels of EMI filtering with
integrated ESD protection
Pi-style EMI filters in a capacitor-resistor-
capacitor (C-R-C) network
±15kV
ESD protection on each channel
(IEC 61000-4-2 Level 4, contact discharge)
±30kV
ESD protection on each channel (HBM)
Greater than 30dB of attenuation from 800MHz to
3GHz
UDFN package with 0.40mm lead pitch:
•4-ch. = 8-lead UDFN
•6-ch. = 12-lead UDFN
•8-ch. = 16-lead UDFN
Tiny UDFN package size:
• 8-lead: 1.7mm x 1.35mm x 0.50mm
• 12-lead: 2.5mm x 1.35mm x 0.50mm
• 16-lead: 3.3mm x 1.35mm x 0.50mm
Increased robustness against vertical impacts
during manufacturing process
Lead-free finishing
Product Description
The CM1636 is an EMI filter array with ESD
protection, which integrates either four, six or eight pi
filters (C-R-C). Each CM1636 filter has component
values of 15pF-200W-15pF. These parts include ESD
protection diodes on every pin, providing a very high
level of protection for sensitive electronic components
that may be subjected to electrostatic discharge
(ESD). The ESD diodes connected to the filter ports
safely dissipate ESD strikes of
±15kV
contact
discharge, twice the specification requirement of the
IEC 61000-4-2, Level 4 international standard. Using
the MIL-STD-883 (Method 3015) specification for
Human Body Model (HBM) ESD, the pins are
protected for contact discharges at greater than
±30kV.
This device is particularly well-suited for portable
electronics (e.g. mobile handsets, PDAs, notebook
computers) because of its small package and easy-
to-use pin assignments. In particular, the CM1636 is
ideal for EMI filtering and protecting data lines from
ESD in wireless handsets.
The CM1636 is available in space-saving, ultra-low-
profile, 8-lead, 12-lead and 16-lead 0.4mm pitch
UDFN packages. It is fabricated with California Micro
Devices'
Centurion
TM
process and available with lead-
free finishing.
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Applications
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I/O port protection for mobile handsets, notebook
computers, PDAs etc.
EMI filtering for data ports in cell phones, PDAs
or notebook computers.
EMI filtering for LCD, camera and chip-to-chip
data lines
©2010 SCILLC. All rights reserved.
May 2010 – Rev. 2
Publication Order Number:
CM1636/D
CM1636
ELECTRICAL OPERATING CHARACTERISTICS
(SEE NOTE 1)
SYMBOL
R
C
TOTAL
C
V
DIODE
I
LEAK
V
SIG
PARAMETER
Resistance
Total Channel Capacitance
At 2.5VDC Reverse Bias, 1MHz,
30mVAC
At 2.5V DC, 1MHz, 30mV AC
I
DIODE
= 10μA
V
DIODE
= 3.3V
CONDITIONS
MIN
160
24
TYP
200
30
MAX
240
36
UNITS
Ω
pF
Capacitance
Diode Standoff Voltage
Diode Leakage Current (reverse
bias)
Signal Voltage
Positive Clamp
Negative Clamp
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-
883, Method 3015
b) Contact Discharge per IEC
61000-4-2 Level 4
Cut-off Frequency
Z
SOURCE
=50Ω, Z
LOAD
=50Ω
Absolute Attenuation @ 1GHz from
0dB Level
15
6.0
0.1
1
pF
V
μA
I
LOAD
= 10mA
I
LOAD
= -10mA
Notes 2
5.6
-0.4
6.8
-0.8
V
V
V
ESD
±30
±15
R = 200Ω, C = 15pF;
Note 3
Z
SOURCE
= 50Ω, Z
LOAD
= 50Ω,
DC Bias = 0V; Notes 1 and 3
Z
SOURCE
= 50Ω, Z
LOAD
= 50Ω,
DC Bias = 0V; Notes 1 and 35
kV
kV
f
C
100
35
MHz
dB
A
1GHz
A
800MHz - 6GHz
Absolute Attenuation @ 800MHz to
6GHz from 0dB Level
30
dB
Note 1: T
A
=25
°
C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Attenuation / RF curves characterized by a network analyzer using microprobes.
Rev. 2 | Page 5 of 22 | www.onsemi.com