CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
TC = 25
o
C, Unless Otherwise Specified
I
DRM
(MAX)
AT V
DRM
µA
5
5
5
5
5
5
5
5
5
5
5
5
5
V
T
(MAX)
AT 2 A
V
5
5
5
5
5
5
5
5
5
5
5
5
5
V
BO
(MAX)
A I
BO
= 800mA
T
(NOTE 2)
V
77
88
260
330
350
77
88
160
190
260
330
350
400
I
PP
(MAX) FOR 10
x 1000µs PULSE
(NOTE 3)
A
50
50
50
50
50
100
100
100
100
100
100
100
100
I
TSM
(NOTE 4)
A
25
25
25
25
25
65
65
65
65
65
65
65
65
C
O
(Typ)
AT 1MHz /
1V
RMS,
2V
DC
pF
80
80
30
30
30
280
280
150
150
100
70
70
55
5
SILICON PROTECTION
CIRCUITS
V
DRM
(MAX)
MODEL NUMBER
B TYPES
SGT0640SBT
SGT0720SBT
SGT2300SBT
SGT2900SBT
SGT3100SBT
C TYPES
SGT0640SCT
SGT0720SCT
SGT1300SCT
SGT1500SCT
SGT2300SCT
SGT2900SCT
SGT3100SCT
SGT3500SCT
58
63
120
140
190
250
275
300
58
63
190
250
275
V
I
H
(MIN)
mA
150
150
150
150
150
150
150
150
150
150
150
150
150
PERCENT OF PEAK VALUE
NOTES:
2. dv/dt = 100V/µs.
3. Double exponential current waveform.
4. One half cycle, 50 to 60Hz sine, non repetitive.
100
90
I
T
I
BO
I
H
I
DRM
V
BO
V
T
V
DRM
50
10
O
1
T
T
1
TIME
T
2
O
1
= Virtual Origin of Wave
T = Time From 10% to 90% of Peak
T
1
= Virtual Front Time = 1.25 • t
T
2
= Virtual Time to Half Value (Impulse Duration)
Example: For an 8/20µs Current Waveform:
8µs = T
1
= Virtual Front Time
20µs = T
2
= Virtual Time to Half Value
FIGURE 1. V-I CHARACTERISTICS
FIGURE 2. PEAK PULSE CURRENT TEST WAVEFORM
w w w. l i t t e l f u s e . c o m
237
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Silicon Protection Circuits
Surface Mount Surgector
TM
Transient Voltage Suppressors
Surgector Thyristors For Telecom Protection
TABLE 1. ELECTRICAL CHARACTERISTICS
VARIATION OF
OF V
BO
vs TEMP
T
A
= -40
o
C TO 85
o
C
(%)
(NOTE 5)
-6 to +6
-6 to +6
-5 to +4
-4 to +4
-4 to +4
-6 to +6
-6 to +6
-5 to +1
-5 to +1
-5 to +4
-4 to +4
-4 to +4
-3 to +4
TYPICAL V
T
AT PEAK
I
T
, T
A
= 25
o
C VOLTS
(V)
(NOTE 6)
4.2 at 50A
4.2 at 50A
3.2 at 50A
3.3 at 50A
3.3 at 50A
5.2 at 100A
5.2 at 100A
4.1 at 100A
4.1 at 100A
4.9 at 100A
7.2 at 100A
7.2 at 100A
7.7 at 100A
VARIATION OF C
O
vs
FREQUENCY
(%)
(NOTE 7)
1
1
1
1
1
1
1
1
1
1
1
1
2
MAXIMUM CRITICAL
RATE OF RISE OF
ON-STATE CURRENT
(dl/dT) (A/
µs)
(NOTE 8)
120
120
120
120
120
250
250
250
250
250
250
250
250
MAXIMUM I
PP
FOR
2x10µs WAVEFORM
(A)
(NOTE 9)
320
320
200
200
200
600
600
600
600
500
500
500
500
MODEL
NUMBER
SGT0640SBT
SGT0720SBT
SGT2300SBT
SGT2900SBT
SGT3100SBT
SGT0640SCT
SGT0720SCT
SGT1300SCT
SGT1500SCT
SGT2300SCT
SGT2900SCT
SGT3100SCT
SGT3500SCT
NOTES:
5. Typical percentage shift from normalized 25
o
C value (positive coefficient).
6. Typical maximum peak forward voltage drop at specified peak current.
7. Typical percentage shift with test frequency ranging from 1kHz to 1MHz/1V
RMS
(for two constant DC bias voltages of 0V and 50V).
8. dI/dT for leading edge of sine wave where 1/2 rated I
PP
is reached at initial 30
o
of the sine.
9. Rated I
PP
value for the 2x10µs waveform above which could cause device damage.
随着阅读器与标签价格的降低和全球市场的扩大，射频标识 RFID(以下简称RFID)的应用与日俱增。标签既可由阅读器供电(无源标签)，也可以由标签的板上电源供电(半有源标签和有源标签)。由于亚微型无源 CMOS 标签的成本降低，库存和其他应用迅速增加。一些评估表明，随着无源标签的价格持续下降，几乎每一个售出产品的内部都将有一个 RFID 标签。由于无源 RFID 标签的重要性及其独特的工程实现...[详细]
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